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ZVN2110GTA

Diodes Incorporated

ZVN2110GTA by Diodes Incorporated

ZVN2110GTA by Diodes Inc. is a N-CHANNEL power FET with 100V DS breakdown voltage, 6A IDM, and 4 ohm RDS(on). It is used for switching applications in small outline packages.

Median Price

$0.454

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,222 parts In-Stock

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$1.520

100+ parts

$0.638

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5,222

$1.520

$0.638

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Adafruit Industries

USA . 2,000 parts In-Stock

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$1.883

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$1.789

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$1.789

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2,000

$1.883

$1.789

$1.789

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Arrow

USA . 39,168 parts In-Stock

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$0.172

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$0.171

39,168

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$0.172

$0.171

DigiKey

USA . 8,929 parts In-Stock

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$0.454

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$0.351

8,929

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$0.454

$0.351

Verical

USA . 1,000 parts In-Stock

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$0.450

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$0.349

1,000

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$0.450

$0.349

Distributors (In-Stock)

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Greenchips

USA . 50 parts In-Stock

1+ parts

$0.372

100+ parts

$0.354

1k+ parts

$0.337

10k+ parts

$0.304

50

$0.372

$0.354

$0.337

$0.304

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.414

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100

$0.414

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Rutronik

Germany . 28,000 parts In-Stock

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$0.403

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$0.310

28,000

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$0.403

$0.310

Vyrian

USA . 16,302 parts In-Stock

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Chip Stock

USA . 4,160 parts In-Stock

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J & M Industries LLC

USA . 4,035 parts In-Stock

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4,035

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NAC Semi

USA . 2,000 parts In-Stock

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$1.090

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$0.980

2,000

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$1.090

$0.980

Semi Source

USA . 926 parts In-Stock

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926

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Bristol Electronics

USA . 710 parts In-Stock

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710

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Inventory MP

USA . 440 parts In-Stock

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440

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 346 parts In-Stock

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346

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ComSIT Distribution GmbH

Germany . 254 parts In-Stock

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ComSIT USA

USA . 254 parts In-Stock

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254

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Semtec, LLC

USA . 100 parts In-Stock

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100

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ACDS - Activité Composants Distribution Service

France . 76 parts In-Stock

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Dan-Mar Components

USA . 76 parts In-Stock

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76

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LWI Electronics Inc

India . 70 parts In-Stock

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70

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SIE Connect GmbH - GreenChips

Germany . 50 parts In-Stock

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Prism Electronics

USA . 15 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 16,246 parts In-Stock

1+ parts

$0.220

100+ parts

$0.214

1k+ parts

$0.213

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16,246

$0.220

$0.214

$0.213

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.405

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$0.389

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100

$0.405

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$0.389

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Argo Parts USA

USA . 3,477 parts In-Stock

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$0.414

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$0.401

3,477

$0.414

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$0.401

Continental Prestige Electronics

USA . 3,326 parts In-Stock

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$0.414

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$0.405

3,326

$0.414

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$0.405

Corohmni

South Africa . 118 parts In-Stock

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$0.417

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118

$0.417

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Component Stockers USA

USA . 192,011 parts In-Stock

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$0.760

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$0.330

1k+ parts

$0.190

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$0.170

192,011

$0.760

$0.330

$0.190

$0.170

Aztec Data Supply Inc.

USA . 4,625 parts In-Stock

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$0.788

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4,625

$0.788

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.883

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$1.789

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$1.789

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2,000

$1.883

$1.789

$1.789

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Modulus Dynamics

Lithuania . 22,052 parts In-Stock

1+ parts

$1.946

100+ parts

$1.946

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$1.946

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22,052

$1.946

$1.946

$1.946

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Andel Nordic

Denmark . 4,376 parts In-Stock

1+ parts

$10.035

100+ parts

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1k+ parts

$9.633

10k+ parts

$9.633

4,376

$10.035

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$9.633

$9.633

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 43,701 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,453 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Robosynatics

Brazil . 12,306 parts In-Stock

1+ parts

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100+ parts

$1.814

1k+ parts

$1.777

10k+ parts

$1.777

12,306

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$1.814

$1.777

$1.777

Lucentia Tech

USA . 12,306 parts In-Stock

1+ parts

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100+ parts

$1.814

1k+ parts

$1.777

10k+ parts

$1.777

12,306

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$1.814

$1.777

$1.777

Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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12,000

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Eastek

USA . 1,000 parts In-Stock

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$0.332

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1,000

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$0.332

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Overview

Experience superior performance and reliability with the ZVN2110GTA by Diodes Incorporated. As a leading manufacturer in power Field Effect Transistors (FET), Diodes Incorporated delivers exceptional quality and innovation. The ZVN2110GTA offers countless applications in switching, providing efficiency and versatility in various industries. With its N-Channel configuration and enhancement mode, this transistor ensures optimal functionality. Its compact size and surface mount capability make it perfect for space-constrained designs. Trust Diodes Incorporated to enhance your projects with the value, benefits, and advantages of the ZVN2110GTA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and provides protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance and higher efficiency compared to P-channel transistors, making this product a good choice for various applications.

Configuration: SINGLE

Single configuration simplifies the design and integration process of the transistor, making it easier to implement in circuit layouts.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for power control purposes.

Surface Mount: YES

Surface mount capability allows for easy and convenient attachment to circuit boards, saving space and enabling automated assembly processes.

Minimum DS Breakdown Voltage: 100 V

The high minimum breakdown voltage of 100V ensures reliable operation and protection against overvoltage conditions in various applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient placement on circuit boards and facilitates heat dissipation for better overall performance.

Terminal Form: GULL WING

Gull wing terminal form provides secure connections and ease of soldering during the assembly process, ensuring reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers better control and efficiency in switching applications, making this transistor a reliable choice for power management.

Maximum Pulsed Drain Current (IDM): 6 A

High maximum pulsed drain current of 6A allows for handling of peak current demands in applications, ensuring reliable performance under heavy load conditions.

No. of Terminals: 4

Having 4 terminals allows for easy integration into circuit designs and provides flexibility for various connection configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on circuit boards and enables efficient thermal management, making it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, ensuring stable operation in various operating conditions.

Transistor Element Material: SILICON

Silicon material for the transistor element provides excellent thermal stability and consistent performance over a wide temperature range, making it a reliable choice for power applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides corrosion resistance and ensures reliable electrical connections, enhancing the overall durability of the transistor.

Maximum Drain Current (ID): 0.5 A

Maximum drain current of 0.5A allows for efficient power handling and reliable operation in various circuit applications.

Maximum Drain-Source On Resistance: 4 ohm

Low drain-source on resistance of 4 ohms ensures minimal power loss and efficient operation, making this transistor suitable for high-power applications.

Terminal Position: DUAL

Dual terminal position provides flexibility for circuit connections and ensures stable electrical connections in various application scenarios.

Case Connection: DRAIN

Case connection at the drain terminal simplifies circuit layouts and ensures proper connection for efficient power management.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature of 30 seconds ensures safe soldering process during assembly, minimizing the risk of component damage.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260 °C enables reliable soldering and ensures proper bonding of the transistor to circuit boards for long-term durability.

Technical Specifications

Power Field Effect Transistors (FET) ZVN2110GTA attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

FAST SWITCHING

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

6 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN2110GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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