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SPP08N80C3

Infineon Technologies

SPP08N80C3 by Infineon Technologies

SPP08N80C3 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 24A and an avalanche energy rating of 340mJ. This N-channel transistor is commonly used in applications requiring high power dissipation and temperature resistance.

Median Price

$3.210

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Mouser Electronics

USA . 116 parts In-Stock

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$3.210

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$1.420

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$1.060

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$1.000

116

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$1.420

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$1.000

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Digiode

USA . 918 parts In-Stock

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$2.556

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TME

Poland . 409 parts In-Stock

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$2.880

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$2.120

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Rutronik

Germany . 300 parts In-Stock

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$1.310

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Odintec Ltd.

Israel . 290 parts In-Stock

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Vyrian

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Bristol Electronics

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Nova Conductors

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Modulus Dynamics

Lithuania . 21,868 parts In-Stock

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$0.593

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$0.569

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$0.546

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Corohmni

South Africa . 17 parts In-Stock

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Semicontronic

India . 80 parts In-Stock

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Ampacity Inc.

Singapore . 60 parts In-Stock

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Corphita

USA . 499 parts In-Stock

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AZTECH Wire

Italy . 370 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

Germany . 11,364 parts In-Stock

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Argo Parts USA

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Microchip USA

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Continental Prestige Electronics

USA . 1,490 parts In-Stock

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Advanced Electronics

New Zealand . 750 parts In-Stock

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Assy Fe

Spain . 52 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost-optimized to meet typical requirements in consumers with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have better performance and lower resistance compared to P-Channel FETs, making them ideal for high power applications.

Minimum DS Breakdown Voltage: 800 V

With a high breakdown voltage, this FET can handle high voltage applications without risk of damage.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to use in most applications, offering better control over the switching behavior.

Maximum Power Dissipation (Abs): 104 W

This FET can handle high power dissipation, making it suitable for applications with high power requirements.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without performance degradation.

Maximum Drain-Source On Resistance: 0.65 ohm

Low on-resistance results in lower power losses and better efficiency in power applications.

Technical Specifications

Power Field Effect Transistors (FET) SPP08N80C3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED, HIGH VOLTAGE

Avalanche Energy Rating (EAS):

340 mJ

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.65 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

24 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Element Material:

SILICON

Trade Compliance

SPP08N80C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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