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NDS355AN-NB9L007A

Fairchild Semiconductor

NDS355AN-NB9L007A by Fairchild Semiconductor

NDS355AN-NB9L007A by Fairchild Semiconductor is an N-CHANNEL power FET with a max drain current of 1.7A and a max power dissipation of 0.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.

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$0.594

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Overview

Experience the power and quality of Fairchild Semiconductor with the NDS355AN-NB9L007A Power Field Effect Transistor (FET). As a leading manufacturer in the industry, Fairchild Semiconductor is known for producing high-quality components that exceed expectations. The NDS355AN-NB9L007A offers exceptional performance and reliability, making it ideal for a wide range of applications. This enhancement mode transistor allows for efficient power management without compromising on functionality. Its surface mount design and single configuration make installation a breeze. With a maximum drain current of 1.7 A and maximum power dissipation of 0.5 W, this transistor delivers optimal power control. Trust Fairchild Semiconductor to provide you with top-notch products that offer unmatched value, benefits, and advantages.

Feature Benefit Bullets

Polarity or Channel Type:

N-CHANNEL - This specification indicates that the power FET is an N-channel device, allowing for efficient and reliable switching in a variety of applications.

Configuration:

SINGLE - The single configuration of this power FET simplifies its installation and usage, making it suitable for designs requiring a single power FET.

Surface Mount:

YES - With surface mount capabilities, this power FET can be easily mounted on printed circuit boards, enabling compact and space-efficient designs.

Operating Mode:

ENHANCEMENT MODE - The enhancement mode operation of this power FET ensures low power consumption and high efficiency, making it an excellent choice for energy-efficient applications.

Maximum Drain Current (Abs) (ID):

1.7 A - This high maximum drain current allows the power FET to handle substantial current loads, making it suitable for various power applications.

Maximum Power Dissipation (Abs):

0.5 W - The low power dissipation of this power FET helps in minimizing heat generation, maximizing overall system reliability, and reducing the need for additional cooling mechanisms.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - The metal-oxide semiconductor technology employed in this power FET ensures high performance, reliability, and compatibility with modern electronic systems.

Maximum Operating Temperature:

150°C - With a high maximum operating temperature, this power FET can withstand harsh thermal environments, ensuring consistent performance and longevity.

Terminal Finish:

Tin (Sn) - The tin terminal finish provides excellent solderability and ensures secure electrical connections, simplifying the assembly process.

Maximum Time At Peak Reflow Temperature (s):

30 - This specification denotes the maximum time the power FET can safely endure at peak reflow temperature, ensuring reliable soldering during manufacturing processes.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature capability allows the power FET to withstand demanding soldering processes, ensuring robust solder joints and long-term reliability.

Technical Specifications

Power Field Effect Transistors (FET) NDS355AN-NB9L007A attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

1.7 A

Maximum Drain Current (ID):

1.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NDS355AN-NB9L007A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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