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DN3545N8

Supertex

DN3545N8 by Supertex

Supertex DN3545N8 is a N-CHANNEL FET with 450V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.55A IDM, 20 ohm RDS(on), and operates in DEPLETION MODE. This SMALL OUTLINE transistor has a max power dissipation of 1.6W and can withstand temperatures up to 150°C.

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Overview

Experience the superior performance of the DN3545N8 by Supertex, a top-tier manufacturer known for quality and reliability. As a Power FET transistor with N-CHANNEL polarity, this versatile component is ideal for switching applications. With a 450V minimum DS breakdown voltage and built-in diode, it offers exceptional value and benefits in various electronic circuits. Trust Supertex to deliver cutting-edge technology and maximize your project's efficiency with the DN3545N8.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow in one direction, making it suitable for many switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for protection against reverse voltage, simplifying circuit design and increasing overall reliability.

Transistor Application: SWITCHING

Optimized for rapid switching operations, making it ideal for applications that require fast response times.

Minimum DS Breakdown Voltage: 450 V

Can handle high voltages without breakdown, providing a safety margin for a variety of applications.

Maximum Power Dissipation (Abs): 1.6 W

Capable of dissipating heat effectively, ensuring stable operation under high power conditions.

Maximum Drain-Source On Resistance: 20 ohm

Low on-resistance allows for efficient current flow and minimal power loss during operation.

Technical Specifications

Power Field Effect Transistors (FET) DN3545N8 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Supertex

Specs

Additional Features:

HIGH INPUT IMPEDANCE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

450 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

20 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

.55 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DN3545N8 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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