Loading...

DN3525N8

Supertex

DN3525N8 by Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .36 A; Terminal Finish: TIN LEAD; Transistor Application: SWITCHING;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) DN3525N8 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Supertex

Specs

Additional Features:

LOW THRESHOLD

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (ID):

.36 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

1 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DN3525N8 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.90.00.00

SB

8541.90.00.00

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.