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MW7IC2240NBR1

NXP Semiconductors

MW7IC2240NBR1 by NXP Semiconductors

The NXP Semiconductors MW7IC2240NBR1 is a narrow band high power RF amplifier with 28 dB gain, operating b/w 2-2.2 GHz. It has a max input power of 20 dBm and VSWR of 5, suitable for RF & microwave applications requiring high power amplification in the frequency range of 2000-2200 MHz.

Median Price

$47.888

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

MW7IC2240NBR1 by NXP Semiconductors
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 329 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$65.813

10k+ parts

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329

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$65.813

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DigiKey

USA . 304 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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304

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-

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Rochester

USA . 276 parts In-Stock

1+ parts

-

100+ parts

$38.310

1k+ parts

$34.280

10k+ parts

$32.260

276

-

$38.310

$34.280

$32.260

Verical

USA . 276 parts In-Stock

1+ parts

-

100+ parts

$47.888

1k+ parts

$42.850

10k+ parts

$40.325

276

-

$47.888

$42.850

$40.325

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,952 parts In-Stock

1+ parts

$40.536

100+ parts

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1k+ parts

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2,952

$40.536

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Chip Stock

USA . 15,807 parts In-Stock

1+ parts

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15,807

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Cyclops Electronics Ltd

UK . 2,850 parts In-Stock

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2,850

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Vyrian

USA . 2,457 parts In-Stock

1+ parts

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2,457

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Anansix

USA . 587 parts In-Stock

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587

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Prism Electronics

USA . 472 parts In-Stock

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472

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DigiKey Marketplace

USA . 364 parts In-Stock

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364

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Cogito LLC

Ukraine . 22 parts In-Stock

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22

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ACDS - Activité Composants Distribution Service

France . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,198 parts In-Stock

1+ parts

$38.403

100+ parts

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1k+ parts

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2,198

$38.403

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Component Stockers USA

USA . 387 parts In-Stock

1+ parts

$44.340

100+ parts

$41.680

1k+ parts

-

10k+ parts

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387

$44.340

$41.680

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A-Z Elektronik GmbH

Germany . 6,638 parts In-Stock

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6,638

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Perfect Parts

USA . 2,432 parts In-Stock

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2,432

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UNI Independent Distributors

Spain . 2,351 parts In-Stock

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2,351

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Kepictronics

USA . 1,410 parts In-Stock

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1,410

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Cyclops Electronics Ltd (Excess)

UK . 15 parts In-Stock

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15

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Overview

Elevate your RF and microwave applications with the MW7IC2240NBR1 by NXP Semiconductors. Known for their top-notch quality and reliability, NXP Semiconductors delivers cutting-edge technology that sets industry standards. As a narrow band high power amplifier, this component offers a gain of 28 dB, ensuring optimal performance in a variety of settings. With a maximum operating temperature of 150°C and a durable matte tin terminal finish, this amplifier is built to last. Upgrade your systems today and experience the unmatched value and benefits that the MW7IC2240NBR1 brings to your projects.

Feature Benefit Bullets

Maximum Input Power (CW): 20 dBm

With a maximum input power of 20 dBm, this amplifier can handle relatively high power levels without distortion, making it suitable for applications requiring robust performance.

Maximum Voltage Standing Wave Ratio: 5

A maximum VSWR of 5 indicates good matching capabilities, ensuring efficient power transfer and minimal signal reflections in the system.

Construction: COMPONENT

Being a component-level amplifier allows for easier integration into existing systems or custom designs, offering flexibility and convenience to the user.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this amplifier can withstand high temperatures, making it suitable for harsh environments or extended operation.

Terminal Finish: Matte Tin (Sn)

A matte tin finish provides good protection against corrosion and oxidation, ensuring long-term reliability and performance of the amplifier.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Being a narrow-band, high-power amplifier, this product is optimized for specific frequency ranges while delivering high gain, making it ideal for applications requiring precise signal amplification.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier is compatible with standard RF systems and components, simplifying integration and ensuring optimal signal transfer.

Gain: 28 dB

With a gain of 28 dB, this amplifier can significantly boost the input signal strength, improving overall system performance and signal-to-noise ratio.

Minimum Operating Frequency: 2000 MHz

Operating at a minimum frequency of 2000 MHz, this amplifier is suitable for high-frequency applications, such as microwave communication or radar systems.

Maximum Operating Frequency: 2200 MHz

With a maximum operating frequency of 2200 MHz, this amplifier covers a wide frequency range, offering versatility and flexibility in various RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers MW7IC2240NBR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

28 dB

Maximum Input Power (CW):

20 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

2200 MHz

Minimum Operating Frequency:

2000 MHz

Maximum Operating Temperature:

150 Cel

RF or Microwave Device Type:

Terminal Finish:

Matte Tin (Sn)

Maximum Voltage Standing Wave Ratio:

5

Trade Compliance

MW7IC2240NBR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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