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MW7IC2725GNR1

NXP Semiconductors

MW7IC2725GNR1 by NXP Semiconductors

The NXP Semiconductors MW7IC2725GNR1 is a MOS technology RF amplifier with 25.5 dB gain, operating b/w 2300-2700 MHz. It has a max input power of 22 dBm and VSWR of 10, suitable for narrowband high-power applications in the RF & Microwave field.

Median Price

$60.232

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

MW7IC2725GNR1 by NXP Semiconductors
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,695 parts In-Stock

1+ parts

-

100+ parts

$53.540

1k+ parts

$47.910

10k+ parts

$45.090

1,695

-

$53.540

$47.910

$45.090

Verical

USA . 1,695 parts In-Stock

1+ parts

-

100+ parts

$66.925

1k+ parts

$59.888

10k+ parts

$56.362

1,695

-

$66.925

$59.888

$56.362

Richardson RFPD

USA . 216 parts In-Stock

1+ parts

-

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216

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Distributors (In-Stock)

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Digiode

USA . 3,840 parts In-Stock

1+ parts

$56.658

100+ parts

-

1k+ parts

-

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3,840

$56.658

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$60.459

100+ parts

-

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-

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10

$60.459

-

-

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Anansix

USA . 2,633 parts In-Stock

1+ parts

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2,633

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Vyrian

USA . 731 parts In-Stock

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731

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Quantum Digital Technology

USA . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$3.319

100+ parts

$3.020

1k+ parts

$2.722

10k+ parts

-

40

$3.319

$3.020

$2.722

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One Stop Electronics

USA . 865 parts In-Stock

1+ parts

$50.690

100+ parts

-

1k+ parts

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865

$50.690

-

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Corphita

USA . 2,227 parts In-Stock

1+ parts

$53.676

100+ parts

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2,227

$53.676

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Netroflash

USA . 100 parts In-Stock

1+ parts

$60.459

100+ parts

$59.250

1k+ parts

$57.436

10k+ parts

$56.227

100

$60.459

$59.250

$57.436

$56.227

Component Stockers USA

USA . 2,417 parts In-Stock

1+ parts

$61.890

100+ parts

$58.180

1k+ parts

$52.610

10k+ parts

-

2,417

$61.890

$58.180

$52.610

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Ampacity Inc.

Singapore . 1,100 parts In-Stock

1+ parts

$110.330

100+ parts

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1,100

$110.330

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Authorized Procurement Solutions

USA . 19,500 parts In-Stock

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19,500

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Lixinc

USA . 14,590 parts In-Stock

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14,590

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A-Z Elektronik GmbH

Germany . 5,637 parts In-Stock

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5,637

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UNI Independent Distributors

Spain . 3,890 parts In-Stock

1+ parts

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3,890

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Perfect Parts

USA . 7 parts In-Stock

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7

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Overview

Elevate your RF and microwave amplification needs with the MW7IC2725GNR1 by NXP Semiconductors. Crafted with precision and expertise, this narrow band high power amplifier offers a gain of 25.5 dB, delivering exceptional performance from 2300 MHz to 2700 MHz. Whether you're in the telecommunications, aerospace, or defense industry, this component provides unparalleled reliability and efficiency. Trust NXP Semiconductors to bring you cutting-edge technology that exceeds expectations. Experience the quality and value of the MW7IC2725GNR1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the amplifier lightweight and durable, making it suitable for a variety of applications.

Maximum Input Power (CW): 22 dBm

With a high maximum input power capacity, this amplifier can handle strong input signals without distortion, ensuring reliable performance.

Maximum Voltage Standing Wave Ratio: 10

The low maximum VSWR value indicates efficient power transfer and minimal signal reflection, resulting in optimal signal integrity.

Construction: COMPONENT

Being constructed of high-quality components ensures stability and longevity of the amplifier, making it a reliable choice for long-term use.

Power Supplies (V): 28

Operating at a standard voltage of 28V allows for easy integration with existing systems, making it a convenient choice for various setups.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable performance over time.

Technology: MOS

Utilizing MOS technology enables high efficiency and low power consumption, making the amplifier energy-efficient and cost-effective.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Being a narrow-band high-power amplifier, this product is specifically designed for applications requiring high output power within a specific frequency range.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance is standard for RF amplifiers, ensuring compatibility with a wide range of components and systems.

Gain: 25.5 dB

With a high gain value, this amplifier can boost signal strength effectively, enhancing overall system performance.

Minimum Operating Frequency: 2300 MHz

The minimum operating frequency of 2300 MHz allows for operation in the higher frequency range, suitable for applications requiring such frequency capabilities.

Maximum Operating Frequency: 2700 MHz

The high maximum operating frequency of 2700 MHz provides flexibility for use in various frequency bands, making it a versatile choice for different applications.

Technical Specifications

RF & Microwave Amplifiers MW7IC2725GNR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

25.5 dB

Maximum Input Power (CW):

22 dBm

JESD-609 Code:

e3

No. of Functions:

1

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

2300 MHz

Package Body Material:

Package Equivalence Code:

FLNG,.67"H.SPACE

Power Supplies (V):

28

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

MOS

Terminal Finish:

TIN

Maximum Voltage Standing Wave Ratio:

10

Trade Compliance

MW7IC2725GNR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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