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QPA2612TR7

Qorvo

QPA2612TR7 by Qorvo

Qorvo's QPA2612TR7 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 4, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals and surface-mounting feature in a plastic/epoxy package body.

Median Price

$242.390

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

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DigiKey

USA . 500 parts In-Stock

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$242.390

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500

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Vyrian

USA . 149 parts In-Stock

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149

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Corohmni

South Africa . 791 parts In-Stock

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$0.964

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Aztec Data Supply Inc.

USA . 196 parts In-Stock

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$2.110

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AZTECH Wire

Italy . 273 parts In-Stock

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$7.404

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Continental Prestige Electronics

USA . 5,751 parts In-Stock

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Argo Parts USA

USA . 3,547 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Qorvo QPA261x X-Band Power Amplifiers are high-performance amplifiers fabricated with 0.15µm GaN on SiC process (QGaN15). These power amplifiers support tight lattice spacing requirements for phased array radar applications. The QPA261x amplifiers feature RF input and output ports that are matched to 50Ω and include integrated DC blocking capacitors. These power amplifiers are stored at -55°C  to +150°C. The Qorvo QPA261x amplifiers operate at -4V to 0V maximum gate voltage range. These power amplifiers are ideal for use in radar, communication, and Satcom.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers a lightweight and cost-effective solution for RF amplifiers.

Maximum Input Power (CW): 21 dBm

With a high input power capacity, this amplifier can handle strong signals without distortion.

Maximum Voltage Standing Wave Ratio: 4

A low VSWR ensures efficient energy transfer and minimal signal loss in the system.

Construction: COMPONENT

Being a component-based design allows for easy integration and customization in different applications.

No. of Terminals: 24

Having 24 terminals provides flexibility in connecting to various subsystems in the RF system.

Technology: GAN

Utilizing Gallium Nitride technology ensures high efficiency and power handling capabilities.

RF or Microwave Device Type: WIDE BAND HIGH POWER

This amplifier is ideal for applications requiring wide bandwidth and high power output.

Characteristic Impedance: 50 ohm

Matching the impedance of the amplifier with the system components ensures optimal signal transfer.

Gain: 34.2 dB

With a high gain value, this amplifier can boost weak signals to a desirable level.

Minimum Operating Frequency: 8000 MHz

Operating at a low frequency of 8000 MHz allows for compatibility with a wide range of systems.

Mounting Feature: SURFACE MOUNT

The surface mount design enables easy installation and space-saving in compact systems.

Maximum Operating Frequency: 12000 MHz

Capable of operating at up to 12000 MHz, this amplifier is suitable for high-frequency applications.

Technical Specifications

RF & Microwave Amplifiers QPA2612TR7 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Qorvo

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

34.2 dB

Maximum Input Power (CW):

21 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Frequency:

12000 MHz

Minimum Operating Frequency:

8000 MHz

Package Body Material:

Package Equivalence Code:

LCC24,.2SQ,25

RF or Microwave Device Type:

Technology:

GAN

Maximum Voltage Standing Wave Ratio:

4

Manufacturer Highlights

Qorvo

Your car. Your smartphone. Your wrist. Your heart. Even outer space. Qorvo products are at work connecting, protecting and powering the planet. We bring core radio frequency (RF) and power technologies and solutions to mobile, infrastructure, the IoT, defense/aerospace and power management markets. Transforming the way you live, work, play and communicate — that's what inspires us. Innovation. Product Leadership. Scale. Speed. At Qorvo, we are driven by the possibility of discovery — of new RF and power technologies and advancements in design, manufacturing and communications that make the world a better, cleaner and more connected place. We've been working on that for more than 30 years, both as innovators and as stewards of our planet. And we are just getting started.

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