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MMRF2010GNR1

NXP Semiconductors

MMRF2010GNR1 by NXP Semiconductors

MMRF2010GNR1 by NXP Semiconductors is a RF amplifier with 30.5 dB gain, operating frequency range of 1030-1090 MHz, and max input power of 25 dBm. It is designed for narrow band high power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features LDMOS technology, surface mounting, and can operate b/w -55 to 150 °C temperature range.

Median Price

$421.970

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 500 parts In-Stock

1+ parts

$479.700

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$479.700

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$479.700

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$479.700

500

$479.700

$479.700

$479.700

$479.700

Richardson RFPD

USA . 414 parts In-Stock

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$364.240

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414

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$364.240

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Distributors (In-Stock)

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Nova Conductors

Japan . 45 parts In-Stock

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$383.594

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45

$383.594

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Digiode

USA . 519 parts In-Stock

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$455.715

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519

$455.715

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Vyrian

USA . 2,549 parts In-Stock

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2,549

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Anansix

USA . 1,407 parts In-Stock

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Flip Electronics

USA . 432 parts In-Stock

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432

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Distributors (Availability)

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AZTECH Wire

Italy . 492 parts In-Stock

1+ parts

$9.774

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492

$9.774

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Ampacity Inc.

Singapore . 3 parts In-Stock

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$309.600

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3

$309.600

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Netroflash

USA . 2,000 parts In-Stock

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$383.594

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$383.594

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Corphita

USA . 3,622 parts In-Stock

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$431.730

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$431.730

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UNI Independent Distributors

Spain . 6,682 parts In-Stock

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Microchip USA

USA . 5,053 parts In-Stock

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5,053

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Overview

Elevate your RF & Microwave Amplifiers with the MMRF2010GNR1 by NXP Semiconductors. Designed with precision and expertise, this component offers unparalleled performance and reliability. Whether you're in the telecommunications, aerospace, or defense industry, this product delivers exceptional value, benefits, and advantages to meet your specific needs. Take your projects to the next level with the MMRF2010GNR1 and experience the difference that quality manufacturing can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body ensures durability and reliability for long-term use.

Maximum Input Power (CW): 25 dBm

With a high maximum input power capacity of 25 dBm, this amplifier can handle strong input signals without distortion.

Maximum Voltage Standing Wave Ratio: 10

A low maximum VSWR of 10 indicates good impedance matching and efficient power transfer within the system.

Power Supplies (V): 50

Operating at a supply voltage of 50V enables the amplifier to deliver high power output with efficiency.

Technology: LDMOS

The use of LDMOS technology ensures high linearity, efficiency, and power output for optimal performance.

Gain: 30.5 dB

With a high gain of 30.5 dB, this amplifier can significantly boost the strength of input signals for better output performance.

Minimum Operating Frequency: 1030 MHz

Operating at a low frequency of 1030 MHz, this amplifier is suitable for narrow-band applications requiring precise signal amplification.

Maximum Operating Frequency: 1090 MHz

With a high maximum operating frequency of 1090 MHz, this amplifier is ideal for narrow-band high-power applications within this frequency range.

Technical Specifications

RF & Microwave Amplifiers MMRF2010GNR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

30.5 dB

Maximum Input Power (CW):

25 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Frequency:

1090 MHz

Minimum Operating Frequency:

1030 MHz

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

Power Supplies (V):

50

RF or Microwave Device Type:

Technology:

Terminal Finish:

TIN

Maximum Voltage Standing Wave Ratio:

10

Trade Compliance

MMRF2010GNR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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