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MMZ25332BT1

NXP Semiconductors

MMZ25332BT1 by NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.

Median Price

$7.725

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 641 parts In-Stock

1+ parts

$7.750

100+ parts

$5.867

1k+ parts

$5.169

10k+ parts

$4.985

641

$7.750

$5.867

$5.169

$4.985

Mouser Electronics

USA . 925 parts In-Stock

1+ parts

$8.680

100+ parts

$5.810

1k+ parts

$4.720

10k+ parts

-

925

$8.680

$5.810

$4.720

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Flip Electronics (Authorized)

USA . 5,566 parts In-Stock

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5,566

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Verical

USA . 1,863 parts In-Stock

1+ parts

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$7.725

1k+ parts

$6.912

10k+ parts

$6.513

1,863

-

$7.725

$6.912

$6.513

Rochester

USA . 1,863 parts In-Stock

1+ parts

-

100+ parts

$6.180

1k+ parts

$5.530

10k+ parts

$5.210

1,863

-

$6.180

$5.530

$5.210

Richardson RFPD

USA . 409 parts In-Stock

1+ parts

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$4.700

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409

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$4.700

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Chip1Stop

Japan . 9 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 2,780 parts In-Stock

1+ parts

$4.446

100+ parts

-

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2,780

$4.446

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Nova Conductors

Japan . 94 parts In-Stock

1+ parts

$5.000

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94

$5.000

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Component Sense

UK . 24,661 parts In-Stock

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24,661

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Anansix

USA . 2,570 parts In-Stock

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A&K Electronics

USA . 2,000 parts In-Stock

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2,000

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Rotakorn

Sweden . 2,000 parts In-Stock

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2,000

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Bristol Electronics

USA . 2,000 parts In-Stock

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2,000

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Vyrian

USA . 1,305 parts In-Stock

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1,305

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Flip Electronics

USA . 1,006 parts In-Stock

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1,006

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Speed Components Ltd

Israel . 800 parts In-Stock

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800

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,060 parts In-Stock

1+ parts

$3.980

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1,060

$3.980

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Corphita

USA . 4,135 parts In-Stock

1+ parts

$4.212

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4,135

$4.212

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Continental Prestige Electronics

USA . 3,388 parts In-Stock

1+ parts

$5.000

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$4.900

3,388

$5.000

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$4.900

Netroflash

USA . 1,000 parts In-Stock

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$5.000

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1,000

$5.000

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Lixinc

USA . 8,220 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,405 parts In-Stock

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UNI Independent Distributors

Spain . 3,837 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,349 parts In-Stock

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Argo Parts USA

USA . 2,655 parts In-Stock

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Authorized Procurement Solutions

USA . 1,800 parts In-Stock

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Perfect Parts

USA . 1,538 parts In-Stock

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1,538

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Kepictronics

USA . 1,239 parts In-Stock

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1,239

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Futuretech Components

Singapore . 949 parts In-Stock

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949

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Metaverse IC Inc.

Canada . 567 parts In-Stock

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567

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Overview

Elevate your RF and microwave amplification with the MMZ25332BT1 by NXP Semiconductors. With a reputation for excellence in semiconductor manufacturing, NXP delivers top-quality products like this one, crafted from durable plastic/epoxy materials. Ideal for a wide range of applications, this amplifier offers customers unparalleled performance, reliability, and versatility. Experience the value and benefits of NXP's cutting-edge technology with the MMZ25332BT1 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability of the amplifier, making it suitable for long-term use in various applications.

Power Supplies (V): 5

Operating at a low voltage of 5V makes this amplifier energy-efficient and suitable for a wide range of power supply applications.

No. of Terminals: 12

Having 12 terminals provides flexibility in connecting and integrating the amplifier into different circuit setups, allowing for versatile usage.

Terminal Finish: MATTE TIN

The matte tin finish on terminals ensures good electrical conductivity and corrosion resistance, contributing to the overall performance and longevity of the amplifier.

Technology: BIPOLAR

Bipolar technology offers high linearity and low noise characteristics, making the amplifier suitable for applications where signal integrity is crucial.

Maximum Supply Current: 412 mA

The low maximum supply current requirement of 412 mA indicates efficient power consumption, which is beneficial for applications where power efficiency is a priority.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

Being a wide band medium power amplifier, this product offers a balanced combination of bandwidth and output power, making it suitable for various RF and microwave applications that require moderate power levels.

Mounting Feature: SURFACE MOUNT

The surface mounting feature enables easy and secure installation of the amplifier onto circuit boards, simplifying the assembly process and ensuring stable connections.

Technical Specifications

RF & Microwave Amplifiers MMZ25332BT1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

12

Package Body Material:

Package Equivalence Code:

LCC12,.12SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

412 mA

Technology:

Terminal Finish:

MATTE TIN

Trade Compliance

MMZ25332BT1 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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