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MMZ25332B4T1

NXP Semiconductors

MMZ25332B4T1 by NXP Semiconductors

NXP Semiconductors' MMZ25332B4T1 is a wide band medium power RF amplifier with 23.5 dB gain, operating from 1500 MHz to 2700 MHz. It has a max input power of 30 dBm and requires a 5V power supply, making it suitable for various RF and microwave applications. The component features a hybrid technology construction in a surface mount package with 24 terminals.

Median Price

$6.200

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 321 parts In-Stock

1+ parts

$3.860

100+ parts

$3.780

1k+ parts

$3.710

10k+ parts

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321

$3.860

$3.780

$3.710

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Mouser Electronics

USA . 487 parts In-Stock

1+ parts

$9.590

100+ parts

$5.950

1k+ parts

$4.680

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487

$9.590

$5.950

$4.680

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Verical

USA . 2,000 parts In-Stock

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2,000

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Chip1Stop

Japan . 559 parts In-Stock

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$6.200

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$6.180

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559

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$6.200

$6.180

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Distributors (In-Stock)

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Digiode

USA . 1,970 parts In-Stock

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$7.543

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1,970

$7.543

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Vyrian

USA . 6,636 parts In-Stock

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6,636

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Anansix

USA . 2,533 parts In-Stock

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2,533

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Flip Electronics

USA . 785 parts In-Stock

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785

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Bristol Electronics

USA . 674 parts In-Stock

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674

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Martec Srl

Italy . 574 parts In-Stock

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574

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Cyclops Electronics Ltd

UK . 508 parts In-Stock

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508

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Nova Conductors

Japan . 98 parts In-Stock

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98

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Distributors (Availability)

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Corohmni

South Africa . 734 parts In-Stock

1+ parts

$2.015

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734

$2.015

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Ampacity Inc.

Singapore . 834 parts In-Stock

1+ parts

$5.270

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834

$5.270

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Corphita

USA . 68 parts In-Stock

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$7.146

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68

$7.146

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A-Z Elektronik GmbH

Germany . 6,462 parts In-Stock

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Continental Prestige Electronics

USA . 4,076 parts In-Stock

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Perfect Parts

USA . 3,024 parts In-Stock

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3,024

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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UNI Independent Distributors

Spain . 2,659 parts In-Stock

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2,659

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Argo Parts USA

USA . 1,765 parts In-Stock

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1,765

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GreenTree Electronics

Israel . 1,100 parts In-Stock

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1,100

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Aranea Global

USA . 100 parts In-Stock

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100

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Kepictronics

USA . 96 parts In-Stock

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96

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Overview

Unlock exceptional performance with the MMZ25332B4T1 by NXP Semiconductors. As a leader in RF & Microwave Amplifiers, NXP delivers top-quality products that exceed industry standards. With a wide band medium power design and maximum input power of 30 dBm, this component offers unparalleled reliability and efficiency. Whether you're in telecommunications, aerospace, or defense, this hybrid technology amplifier provides a seamless solution for your applications. Elevate your projects with NXP Semiconductors and experience unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the amplifier, ensuring a long lifespan.

Maximum Input Power (CW): 30 dBm

With a high maximum input power capacity, this amplifier can handle strong signals without distortion, making it suitable for demanding applications.

Construction: COMPONENT

Component construction allows for easy integration into larger systems or circuits, making this amplifier versatile in various setups.

Power Supplies (V): 5

Operating with a standard 5V power supply simplifies power requirements, making this amplifier easy to incorporate into existing setups.

No. of Terminals: 24

Having 24 terminals provides flexibility in connections and signal routing, allowing for complex configurations and signal processing.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and corrosion resistance, maintaining stable connections for optimal performance.

Technology: HYBRID

Hybrid technology combines the benefits of different technologies, offering a balance of performance, efficiency, and reliability in this amplifier.

Maximum Supply Current: 415 mA

The moderate supply current requirement of 415 mA allows for efficient power usage and minimizes heat generation, enhancing the overall performance of the amplifier.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

Being a wide band medium power device, this amplifier can cover a broad frequency range while providing a good balance between power output and efficiency.

Characteristic Impedance: 50 ohm

With a standard 50 ohm characteristic impedance, this amplifier is compatible with most RF systems and ensures proper signal matching for optimal performance.

Gain: 23.5 dB

Having a gain of 23.5 dB amplifies the input signal with minimal added noise, improving the overall signal quality and strength.

Minimum Operating Frequency: 1500 MHz

Operating at a minimum frequency of 1500 MHz allows this amplifier to cover a wide range of frequencies, making it versatile for different applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and integration, saving space and allowing for easy PCB assembly in compact setups.

Maximum Operating Frequency: 2700 MHz

With a maximum frequency of 2700 MHz, this amplifier can handle high-frequency signals with precision and efficiency, making it suitable for a wide range of RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers MMZ25332B4T1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

23.5 dB

Maximum Input Power (CW):

30 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

1500 MHz

Package Body Material:

Package Equivalence Code:

LCC24,.16SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Maximum Supply Current:

415 mA

Technology:

Terminal Finish:

TIN

Trade Compliance

MMZ25332B4T1 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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