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MMZ27333BT1

NXP Semiconductors

MMZ27333BT1 by NXP Semiconductors

MMZ27333BT1 by NXP Semiconductors is a RF & Microwave Amplifier with 34.8 dB Gain, 1500-2700 MHz frequency range, and 10 dBm CW input power. It is a wide band medium power device suitable for various applications requiring high-frequency signal amplification.

Median Price

$9.475

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,641 parts In-Stock

1+ parts

$11.040

100+ parts

$7.060

1k+ parts

$5.000

10k+ parts

-

4,641

$11.040

$7.060

$5.000

-

Rochester

USA . 2,279 parts In-Stock

1+ parts

-

100+ parts

$7.910

1k+ parts

$7.080

10k+ parts

$6.660

2,279

-

$7.910

$7.080

$6.660

Verical

USA . 284 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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284

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,947 parts In-Stock

1+ parts

$6.270

100+ parts

-

1k+ parts

-

10k+ parts

-

4,947

$6.270

-

-

-

Digiode

USA . 1,778 parts In-Stock

1+ parts

$8.958

100+ parts

-

1k+ parts

-

10k+ parts

-

1,778

$8.958

-

-

-

Flip Electronics

USA . 2,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,279

-

-

-

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Anansix

USA . 228 parts In-Stock

1+ parts

-

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-

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228

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Component Sense

UK . 25 parts In-Stock

1+ parts

-

100+ parts

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,191 parts In-Stock

1+ parts

$8.020

100+ parts

-

1k+ parts

-

10k+ parts

-

2,191

$8.020

-

-

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Corphita

USA . 2,911 parts In-Stock

1+ parts

$8.487

100+ parts

-

1k+ parts

-

10k+ parts

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2,911

$8.487

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UNI Independent Distributors

Spain . 4,108 parts In-Stock

1+ parts

-

100+ parts

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4,108

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Overview

Elevate your RF and microwave amplification with the MMZ27333BT1 by NXP Semiconductors. Crafted with precision and expertise, this wide band medium power device offers unparalleled performance and reliability. Ideal for a variety of applications, from telecommunications to aerospace, this component provides a seamless integration with its surface mount feature and 24 terminals for easy installation. Unlock the full potential of your projects with the MMZ27333BT1 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the amplifier easy to handle and resistant to damage.

Maximum Input Power (CW): 10 dBm

With a high maximum input power capacity, this amplifier can handle strong input signals without distortion or damage.

Maximum Voltage Standing Wave Ratio: 1.55

The low VSWR value indicates efficient power transfer and minimal signal reflection, ensuring high performance.

Construction: COMPONENT

The component construction ensures reliability and consistent performance over time.

Power Supplies (V): 5

Operating at a standard voltage of 5V makes this amplifier compatible with various systems and easy to integrate.

No. of Terminals: 24

Having a high number of terminals allows for versatile connectivity options and functionality.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance for long-lasting performance.

Technology: HYBRID

Hybrid technology combines the best features of different technologies, offering a balance of performance and efficiency.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

This type of device offers a broad frequency range and moderate power output, suitable for diverse applications.

Characteristic Impedance: 50 ohm

The 50 ohm impedance matches standard RF systems, ensuring efficient power transfer and minimal signal loss.

Gain: 34.8 dB

With a high gain value, this amplifier can boost signal strength effectively, improving overall system performance.

Minimum Operating Frequency: 1500 MHz

Operating at a low frequency of 1500 MHz allows this amplifier to cover a wide range of RF signals and applications.

Maximum Operating Frequency: 2700 MHz

With a high maximum frequency, this amplifier is suitable for handling a variety of RF and microwave signals.

Technical Specifications

RF & Microwave Amplifiers MMZ27333BT1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

34.8 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

1500 MHz

Package Body Material:

Package Equivalence Code:

LCC24,.16SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Technology:

Terminal Finish:

TIN

Maximum Voltage Standing Wave Ratio:

1.55

Trade Compliance

MMZ27333BT1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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