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LDMOS RF & Microwave Amplifiers 19

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
AFIC31025GNR1 by NXP Semiconductors

AFIC31025GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A3I20X050GNR1 by NXP Semiconductors

A3I20X050GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 2.15/28;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

A2I20D040GNR1 by NXP Semiconductors

A2I20D040GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I20D040NR1 by NXP Semiconductors

A2I20D040NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010GNR1 by NXP Semiconductors

MMRF2010GNR1

NXP Semiconductors

MMRF2010GNR1 by NXP Semiconductors is a RF amplifier with 30.5 dB gain, operating frequency range of 1030-1090 MHz, and max input power of 25 dBm. It is designed for narrow band high power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features LDMOS technology, surface mounting, and can operate b/w -55 to 150 °C temperature range.

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010NR1 by NXP Semiconductors

MMRF2010NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 14; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060GNR1 by NXP Semiconductors

A2I35H060GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 3800 MHz;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060NR1 by NXP Semiconductors

A2I35H060NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

AFIC31025NR1 by NXP Semiconductors

AFIC31025NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; No. of Functions: 2;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A3I35D025WGNR1 by NXP Semiconductors

A3I35D025WGNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

26.5 dB

28 dBm

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

10

A3I35D025WNR1 by NXP Semiconductors

A3I35D025WNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3200 MHz;

50 ohm

COMPONENT

26.5 dB

28 dBm

e3

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I09VD050GNR1 by NXP Semiconductors

A2I09VD050GNR1

NXP Semiconductors

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

12

960 MHz

575 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

48

WIDE BAND HIGH POWER

LDMOS

TIN

10

A3I20X050NR1 by NXP Semiconductors

A3I20X050NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

AFSC5G40E38T2 by NXP Semiconductors

AFSC5G40E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 28;

50 ohm

COMPONENT

27.1 dB

SURFACE MOUNT

1

26

4000 MHz

3700 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

28

NARROW BAND HIGH POWER

LDMOS

AFSC5G35E38T2 by NXP Semiconductors

AFSC5G35E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Package Equivalence Code: LCC26,.24X.4,40;

50 ohm

COMPONENT

29.3 dB

e4

SURFACE MOUNT

1

26

3700 MHz

3400 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

30

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

A3M35TL039T2 by NXP Semiconductors

A3M35TL039T2

NXP Semiconductors

NXP Semiconductors A3M35TL039T2 is a 26V LDMOS RF amplifier with 26 terminals, operating from 3300-3700 MHz. It offers 26.5 dB gain and is ideal for narrowband high-power applications at temperatures up to 125°C. This surface-mount component has a characteristic impedance of 50 ohms, making it suitable for various RF and microwave systems.

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.5 dB

SURFACE MOUNT

1

26

3700 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

A3M37TL039T2 by NXP Semiconductors

A3M37TL039T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.1 dB

e4

SURFACE MOUNT

1

26

3800 MHz

3600 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

AFSC5G23E37T2 by NXP Semiconductors

AFSC5G23E37T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 2400 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

32 dB

SURFACE MOUNT

1

26

2400 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

28

NARROW BAND HIGH POWER

LDMOS

A3M34TL139T2 by NXP Semiconductors

A3M34TL139T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3300 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

25.6 dB

SURFACE MOUNT

1

26

3580 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

27

NARROW BAND HIGH POWER

LDMOS