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A3M35TL039T2

NXP Semiconductors

A3M35TL039T2 by NXP Semiconductors

NXP Semiconductors A3M35TL039T2 is a 26V LDMOS RF amplifier with 26 terminals, operating from 3300-3700 MHz. It offers 26.5 dB gain and is ideal for narrowband high-power applications at temperatures up to 125°C. This surface-mount component has a characteristic impedance of 50 ohms, making it suitable for various RF and microwave systems.

Median Price

$46.800

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 24 parts In-Stock

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$46.800

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Verical

USA . 37 parts In-Stock

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Bristol Electronics

USA . 17 parts In-Stock

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$42.000

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$40.383

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Digiode

USA . 2,457 parts In-Stock

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$44.460

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Martec Srl

Italy . 290,000 parts In-Stock

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Flip Electronics

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Vyrian

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Anansix

USA . 2,402 parts In-Stock

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Microfarads

USA . 25 parts In-Stock

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AZTECH Wire

Italy . 220 parts In-Stock

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$8.440

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$8.440

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Native Components

USA . 612 parts In-Stock

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$10.730

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Northwest PG Solutions

USA . 510 parts In-Stock

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$11.803

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$10.623

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$11.803

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Corphita

USA . 3,439 parts In-Stock

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$42.120

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UNI Independent Distributors

Spain . 2,775 parts In-Stock

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Infinite Electronics LLP (Excess)

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Overview

Experience unparalleled performance and reliability with the A3M35TL039T2 by NXP Semiconductors. As a leading manufacturer in the industry, NXP delivers cutting-edge RF & Microwave Amplifiers like no other. Whether you're in aerospace, telecommunications, or radar systems, this high-power amplifier provides exceptional quality and efficiency. Elevate your projects with the A3M35TL039T2 and enjoy seamless integration, superior gain, and maximum operating temperatures up to 125°C. Trust NXP Semiconductors to deliver the innovative solutions you need for success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and highly durable, ensuring long-term reliability and performance.

Power Supplies (V): 26

The 26V power supply allows for efficient power management and operation of the amplifier.

No. of Terminals: 26

Having 26 terminals provides flexibility in connectivity options and allows for easy integration into various systems.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures the amplifier can withstand harsh environmental conditions without compromising performance.

Technology: LDMOS

The LDMOS technology used in the amplifier offers high power efficiency and excellent linearity, making it suitable for narrow band applications.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Being a narrow band high power amplifier, this product is optimized for applications requiring high power output within a specific frequency range.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier is compatible with standard RF systems and ensures efficient signal transfer.

Gain: 26.5 dB

The high gain of 26.5 dB enhances the input signal strength, resulting in improved output power and signal quality.

Minimum Operating Frequency: 3300 MHz

The minimum operating frequency of 3300 MHz allows for operation in a wide frequency range, offering versatility in various RF and microwave applications.

Maximum Operating Frequency: 3700 MHz

The high maximum operating frequency of 3700 MHz enables the amplifier to cover a broad frequency spectrum, making it suitable for a wide range of applications.

Mounting Feature: SURFACE MOUNT

The surface mount design simplifies the installation process and enables easy integration of the amplifier into existing systems or circuit boards.

Technical Specifications

RF & Microwave Amplifiers A3M35TL039T2 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

I/P POWER-MAX (PEAK)=25DBM

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

26.5 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

26

Maximum Operating Frequency:

3700 MHz

Minimum Operating Frequency:

3300 MHz

Maximum Operating Temperature:

125 Cel

Package Body Material:

Package Equivalence Code:

LCC26,.24X.4,40

Power Supplies (V):

26

RF or Microwave Device Type:

Technology:

Trade Compliance

A3M35TL039T2 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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