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A2I35H060NR1

NXP Semiconductors

A2I35H060NR1 by NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

Median Price

$26.000

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 500 parts In-Stock

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$26.000

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500

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$26.000

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Verical

USA . 500 parts In-Stock

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$26.000

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500

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$26.000

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Rochester

USA . 106 parts In-Stock

1+ parts

-

100+ parts

$40.460

1k+ parts

$36.200

10k+ parts

$34.070

106

-

$40.460

$36.200

$34.070

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,437 parts In-Stock

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Bristol Electronics

USA . 2,124 parts In-Stock

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Digiode

USA . 1,683 parts In-Stock

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1,683

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Anansix

USA . 1,170 parts In-Stock

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Flip Electronics

USA . 106 parts In-Stock

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106

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Distributors (Availability)

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Native Components

USA . 912 parts In-Stock

1+ parts

$8.222

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$8.222

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AZTECH Wire

Italy . 1,088 parts In-Stock

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$8.340

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1,088

$8.340

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Northwest PG Solutions

USA . 2,368 parts In-Stock

1+ parts

$9.044

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$8.140

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2,368

$9.044

$8.140

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UNI Independent Distributors

Spain . 6,972 parts In-Stock

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Corphita

USA . 3,136 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Technical Specifications

RF & Microwave Amplifiers A2I35H060NR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

23 dB

Maximum Input Power (CW):

26 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

17

Maximum Operating Frequency:

3800 MHz

Minimum Operating Frequency:

3400 MHz

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

28

RF or Microwave Device Type:

Technology:

Terminal Finish:

TIN

Maximum Voltage Standing Wave Ratio:

10

Trade Compliance

A2I35H060NR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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