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RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.

RF & Microwave Amplifiers

Available Parts 644

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
SKY65009-70LF by Skyworks Solutions

SKY65009-70LF

Skyworks Solutions

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Construction: COMPONENT; Maximum Input Power (CW): 15 dBm; Maximum Operating Temperature: 85 Cel;

50 ohm

COMPONENT

12 dB

15 dBm

SURFACE MOUNT

1

3

2500 MHz

.25 MHz

85 Cel

-40 Cel

TO-243

5

WIDE BAND MEDIUM POWER

300 mA

ACPM-7311-BLK by Broadcom

ACPM-7311-BLK

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Maximum Supply Current: 525 mA; Minimum Operating Frequency: 824 MHz;

50 ohm

COMPONENT

23.5 dB

10 dBm

SURFACE MOUNT

1

10

849 MHz

824 MHz

90 Cel

-20 Cel

PLASTIC/EPOXY

SOLCC10,.16,32

3.4

NARROW BAND LOW POWER

RF/Microwave Amplifiers

525 mA

2

MGA-632P8-BLKG by Broadcom

MGA-632P8-BLKG

Broadcom

Broadcom's MGA-632P8-BLKG is a GAAS technology RF amplifier with 16dB gain, operating from 1400MHz to 3800MHz. It has a max input power of 20dBm and is ideal for wideband low-power applications. The component features surface mounting and matte tin terminal finish on an 8-terminal plastic/epoxy package body.

50 ohm

COMPONENT

16 dB

20 dBm

e3

SURFACE MOUNT

1

8

3800 MHz

1400 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

4

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Matte Tin (Sn)

MGA-632P8-TR1G by Broadcom

MGA-632P8-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 4;

50 ohm

COMPONENT

16 dB

20 dBm

e3

SURFACE MOUNT

1

8

3800 MHz

1400 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

4

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Matte Tin (Sn)

MGA-632P8-TR2G by Broadcom

MGA-632P8-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 4;

50 ohm

COMPONENT

16 dB

20 dBm

e3

SURFACE MOUNT

1

8

3800 MHz

1400 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

4

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Matte Tin (Sn)

MAX2373ETC by Maxim Integrated

MAX2373ETC

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 2.7; Maximum Operating Frequency: 940 MHz;

50 ohm

COMPONENT

10.5 dB

5 dBm

e0

SURFACE MOUNT

1

12

940 MHz

850 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.12SQ,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

TIN LEAD

MAX2650PCB by Maxim Integrated

MAX2650PCB

Maxim Integrated

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 1.3; Construction: COMPONENT; JESD-609 Code: e0; Minimum Operating Frequency: 800 MHz;

50 ohm

COMPONENT

16.5 dB

13 dBm

e0

1000 MHz

800 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

Tin/Lead (Sn/Pb)

1.3

ALM-42216-BLKG by Broadcom

ALM-42216-BLKG

Broadcom

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3.3; Maximum Voltage Standing Wave Ratio: 6;

50 ohm

COMPONENT

28 dB

12 dBm

SURFACE MOUNT

1

2700 MHz

2300 MHz

PLASTIC/EPOXY

LCC(UNSPEC)

3.3

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

240 mA

GAAS

6

ALM31122-BLKG by Broadcom

ALM31122-BLKG

Broadcom

ALM31122-BLKG by Broadcom is a GAAS RF amplifier with 13.7 dB gain, operating from 700 MHz to 1000 MHz. It has a max input power of 25 dBm and requires a 5V power supply. Ideal for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

13.7 dB

25 dBm

SURFACE MOUNT

1

22

1000 MHz

700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC22(UNSPEC)

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

440 mA

GAAS

ALM31122-TR1G by Broadcom

ALM31122-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 22; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

50 ohm

COMPONENT

13.7 dB

25 dBm

SURFACE MOUNT

1

22

1000 MHz

700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC22(UNSPEC)

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

440 mA

GAAS

ALM31122-TR2G by Broadcom

ALM31122-TR2G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 22; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 13.7 dB;

50 ohm

COMPONENT

13.7 dB

25 dBm

SURFACE MOUNT

1

22

1000 MHz

700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC22(UNSPEC)

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

440 mA

GAAS

MGA-30216-BLKG by Broadcom

MGA-30216-BLKG

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

50 ohm

COMPONENT

13 dB

22 dBm

e3

SURFACE MOUNT

1

16

2700 MHz

1700 MHz

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

255 mA

GAAS

Matte Tin (Sn)

MGA-30216-TR1G by Broadcom

MGA-30216-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

50 ohm

COMPONENT

13 dB

22 dBm

e3

SURFACE MOUNT

1

16

2700 MHz

1700 MHz

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

255 mA

GAAS

Matte Tin (Sn)

MGA-30216-TR2G by Broadcom

MGA-30216-TR2G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

13 dB

22 dBm

e3

SURFACE MOUNT

1

16

2700 MHz

1700 MHz

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

255 mA

GAAS

Matte Tin (Sn)

ALM-31322-BLKG by Broadcom

ALM-31322-BLKG

Broadcom

NARROW BAND MEDIUM POWER; No. of Terminals: 22; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1; Gain: 11.7 dB;

50 ohm

COMPONENT

11.7 dB

25 dBm

1

22

3900 MHz

3300 MHz

PLASTIC/EPOXY

MODULE,22LEAD,0.25

5

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

480 mA

GAAS

ALM-31322-TR1G by Broadcom

ALM-31322-TR1G

Broadcom

NARROW BAND MEDIUM POWER; No. of Terminals: 22; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 3900 MHz; No. of Functions: 1;

50 ohm

COMPONENT

11.7 dB

25 dBm

1

22

3900 MHz

3300 MHz

PLASTIC/EPOXY

MODULE,22LEAD,0.25

5

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

480 mA

GAAS

ALM-32220-BLKG by Broadcom

ALM-32220-BLKG

Broadcom

ALM-32220-BLKG by Broadcom is a GAAS module with 13.5 dB gain, operating from 1700 to 2700 MHz. With a max input power of 28 dBm, it's ideal for wideband high-power RF applications requiring a 50 ohm impedance and 5V supply voltage.

50 ohm

MODULE

13.5 dB

28 dBm

1

2700 MHz

1700 MHz

PLASTIC/EPOXY

MODULE(UNSPEC)

5

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

930 mA

GAAS

ALM-32220-TR1G by Broadcom

ALM-32220-TR1G

Broadcom

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm; Power Supplies (V): 5; Maximum Supply Current: 930 mA;

50 ohm

MODULE

13.5 dB

28 dBm

1

2700 MHz

1700 MHz

PLASTIC/EPOXY

MODULE(UNSPEC)

5

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

930 mA

GAAS

ALM-32220-TR2G by Broadcom

ALM-32220-TR2G

Broadcom

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5; Maximum Supply Current: 930 mA; Gain: 13.5 dB;

50 ohm

MODULE

13.5 dB

28 dBm

1

2700 MHz

1700 MHz

PLASTIC/EPOXY

MODULE(UNSPEC)

5

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

930 mA

GAAS

ALM-42316-BLKG by Broadcom

ALM-42316-BLKG

Broadcom

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 27.5 dB; Package Equivalence Code: LCC(UNSPEC);

50 ohm

COMPONENT

27.5 dB

12 dBm

SURFACE MOUNT

1

3800 MHz

3300 MHz

PLASTIC/EPOXY

LCC(UNSPEC)

3.3

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

GAAS

6

ALM31222-BLKG by Broadcom

ALM31222-BLKG

Broadcom

WIDE BAND MEDIUM POWER; No. of Terminals: 22; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 1700 MHz; Construction: COMPONENT; Power Supplies (V): 5;

50 ohm

COMPONENT

13.7 dB

25 dBm

1

22

2700 MHz

1700 MHz

PLASTIC/EPOXY

MODULE,22LEAD,0.25

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

470 mA

ALM31222-TR1G by Broadcom

ALM31222-TR1G

Broadcom

WIDE BAND MEDIUM POWER; No. of Terminals: 22; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 470 mA; Minimum Operating Frequency: 1700 MHz;

50 ohm

COMPONENT

13.7 dB

25 dBm

1

22

2700 MHz

1700 MHz

PLASTIC/EPOXY

MODULE,22LEAD,0.25

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

470 mA

ALM31222-TR2G by Broadcom

ALM31222-TR2G

Broadcom

WIDE BAND MEDIUM POWER; No. of Terminals: 22; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Maximum Operating Frequency: 2700 MHz; Package Equivalence Code: MODULE,22LEAD,0.25;

50 ohm

COMPONENT

13.7 dB

25 dBm

1

22

2700 MHz

1700 MHz

PLASTIC/EPOXY

MODULE,22LEAD,0.25

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

470 mA

MGA-30116-BLKG by Broadcom

MGA-30116-BLKG

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

50 ohm

COMPONENT

15.5 dB

22 dBm

e3

SURFACE MOUNT

1

16

1000 MHz

750 MHz

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

240 mA

GAAS

Matte Tin (Sn)

MGA-30116-TR1G by Broadcom

MGA-30116-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 22 dBm;

50 ohm

COMPONENT

15.5 dB

22 dBm

e3

SURFACE MOUNT

1

16

1000 MHz

750 MHz

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

240 mA

GAAS

Matte Tin (Sn)

MGA-30116-TR2G by Broadcom

MGA-30116-TR2G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

15.5 dB

22 dBm

e3

SURFACE MOUNT

1

16

1000 MHz

750 MHz

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

240 mA

GAAS

Matte Tin (Sn)

MGA-30316-BLKG by Broadcom

MGA-30316-BLKG

Broadcom

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 3300 MHz;

50 ohm

COMPONENT

11 dB

22 dBm

e3

SURFACE MOUNT

1

16

3900 MHz

3300 MHz

PLASTIC/EPOXY

LCC16,.12SQ,20

5

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

250 mA

GAAS

Tin (Sn)

MGA-675T6-BLKG by Broadcom

MGA-675T6-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 4900 MHz;

50 ohm

COMPONENT

16.3 dB

12 dBm

e4

SURFACE MOUNT

1

6

6000 MHz

4900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

13 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-675T6-TR1G by Broadcom

MGA-675T6-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 12 dBm;

50 ohm

COMPONENT

16.3 dB

12 dBm

e4

SURFACE MOUNT

1

6

6000 MHz

4900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

13 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

AMMC-6333-W10 by Broadcom

AMMC-6333-W10

Broadcom

WIDE BAND MEDIUM POWER; Power Supplies (V): 5; Maximum Input Power (CW): 20 dBm; Maximum Operating Frequency: 33000 MHz; Gain: 15 dB; Package Equivalence Code: DIE OR CHIP;

50 ohm

COMPONENT

15 dB

20 dBm

1

33000 MHz

18000 MHz

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

AMMC-6333-W50 by Broadcom

AMMC-6333-W50

Broadcom

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 5; Maximum Input Power (CW): 20 dBm; Minimum Operating Frequency: 18000 MHz;

50 ohm

COMPONENT

15 dB

20 dBm

1

33000 MHz

18000 MHz

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

UPC8236T6N-E2-A by Renesas Electronics

UPC8236T6N-E2-A

Renesas Electronics

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

COMPONENT

17 dB

10 dBm

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.06,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

8 mA

BIPOLAR

BGA2001,115 by NXP Semiconductors

BGA2001,115

NXP Semiconductors

NARROW BAND LOW POWER; Gain: 19.5 dB; JESD-609 Code: e3; Terminal Finish: Tin (Sn); Maximum Operating Frequency: 1800 MHz; Construction: COMPONENT;

LOW NOISE

50 ohm

COMPONENT

19.5 dB

e3

1800 MHz

900 MHz

NARROW BAND LOW POWER

Tin (Sn)

BGA2003,115 by NXP Semiconductors

BGA2003,115

NXP Semiconductors

The NXP Semiconductors BGA2003,115 is a RF & Microwave Amplifier with 16 dB gain and operates b/w 900-1800 MHz. It has a wide band low power technology, 50 ohm impedance, and requires a 2.5V power supply at max 15 mA current. Ideal for applications requiring high frequency amplification in components like plastic/epoxy packages.

LOW NOISE

50 ohm

COMPONENT

16 dB

e3

1

1800 MHz

900 MHz

PLASTIC/EPOXY

SOT-343R

2.5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

15 mA

BIPOLAR

Tin (Sn)

BGA2011,115 by NXP Semiconductors

BGA2011,115

NXP Semiconductors

NARROW BAND LOW POWER; Terminal Finish: Tin (Sn); Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 15 dB; JESD-609 Code: e3;

50 ohm

COMPONENT

15 dB

e3

NARROW BAND LOW POWER

Tin (Sn)

BGA2012,115 by NXP Semiconductors

BGA2012,115

NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 10 mA;

50 ohm

COMPONENT

14 dB

e3

SURFACE MOUNT

1

6

150 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

NARROW BAND LOW POWER

RF/Microwave Amplifiers

10 mA

BIPOLAR

Tin (Sn)

BGA2031/1,115 by NXP Semiconductors

BGA2031/1,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 1.4;

50 ohm

COMPONENT

23 dB

10 dBm

e3

SURFACE MOUNT

6

2500 MHz

800 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

BIPOLAR

Tin (Sn)

1.4

BGA2748,115 by NXP Semiconductors

BGA2748,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin (Sn); Power Supplies (V): 3;

LOW NOISE

50 ohm

COMPONENT

18.5 dB

10 dBm

e3

SURFACE MOUNT

1

6

2000 MHz

1000 MHz

PLASTIC/EPOXY

TSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

8 mA

Tin (Sn)

BGA2771,115 by NXP Semiconductors

BGA2771,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 10 dBm;

50 ohm

COMPONENT

20.8 dB

10 dBm

e3

SURFACE MOUNT

1

6

2000 MHz

1000 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

45 mA

BIPOLAR

Tin (Sn)

BGA2776,115 by NXP Semiconductors

BGA2776,115

NXP Semiconductors

WIDE BAND LOW POWER; JESD-609 Code: e3; Gain: 23.2 dB; Construction: COMPONENT; Maximum Operating Frequency: 2000 MHz; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

23.2 dB

10 dBm

e3

2000 MHz

1000 MHz

WIDE BAND LOW POWER

Tin (Sn)

BGA6289,135 by NXP Semiconductors

BGA6289,135

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 8; Maximum Input Power (CW): 15 dBm;

50 ohm

COMPONENT

12 dB

15 dBm

e3

SURFACE MOUNT

1

3

2500 MHz

850 MHz

PLASTIC/EPOXY

TO-243

8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

96 mA

Tin (Sn)

BGA6489,135 by NXP Semiconductors

BGA6489,135

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin (Sn); Maximum Operating Frequency: 2500 MHz;

50 ohm

COMPONENT

15 dB

15 dBm

e3

SURFACE MOUNT

1

3

2500 MHz

850 MHz

PLASTIC/EPOXY

TO-243

8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

86 mA

Tin (Sn)

BGA6589,135 by NXP Semiconductors

BGA6589,135

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Supply Current: 89 mA; Minimum Operating Frequency: 850 MHz;

50 ohm

COMPONENT

15 dB

15 dBm

e3

SURFACE MOUNT

1

3

2500 MHz

850 MHz

PLASTIC/EPOXY

TO-243

9

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

89 mA

Tin (Sn)

BGD502,112 by NXP Semiconductors

BGD502,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Maximum Operating Frequency: 550 MHz; Package Equivalence Code: SOT-115J;

LOW NOISE

75 ohm

MODULE

18.8 dB

16.25 dBm

e4

550 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

Gold (Au)

BGD702N,112 by NXP Semiconductors

BGD702N,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Maximum Supply Current: 435 mA; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

BGD704,112 by NXP Semiconductors

BGD704,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Temperature: -20 Cel; Maximum Supply Current: 435 mA; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

BGD714,112 by NXP Semiconductors

BGD714,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 410 mA; Gain: 20.8 dB; Maximum Operating Frequency: 750 MHz;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20.8 dB

e4

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

Gold (Au)

BGD802,112 by NXP Semiconductors

BGD802,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Minimum Operating Temperature: -20 Cel; Maximum Operating Frequency: 860 MHz;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID