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BGA2003,115

NXP Semiconductors

BGA2003,115 by NXP Semiconductors

The NXP Semiconductors BGA2003,115 is a RF & Microwave Amplifier with 16 dB gain and operates b/w 900-1800 MHz. It has a wide band low power technology, 50 ohm impedance, and requires a 2.5V power supply at max 15 mA current. Ideal for applications requiring high frequency amplification in components like plastic/epoxy packages.

Median Price

$1.540

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 5 parts In-Stock

1+ parts

$1.540

100+ parts

$1.150

1k+ parts

$1.000

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5

$1.540

$1.150

$1.000

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Vyrian

USA . 4,521 parts In-Stock

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Digiode

USA . 1,561 parts In-Stock

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1,561

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Anansix

USA . 1,051 parts In-Stock

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1,051

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VNN

France . 1,000 parts In-Stock

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1,000

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$1.171

100+ parts

$1.066

1k+ parts

$0.960

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10

$1.171

$1.066

$0.960

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Aztec Data Supply Inc.

USA . 300 parts In-Stock

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$2.144

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300

$2.144

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AZTECH Wire

Italy . 255 parts In-Stock

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$5.737

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255

$5.737

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Ampacity Inc.

Singapore . 334 parts In-Stock

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$8.000

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334

$8.000

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One Stop Electronics

USA . 1,501 parts In-Stock

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$24.000

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$24.000

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Lixinc

USA . 10,305 parts In-Stock

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Continental Prestige Electronics

USA . 2,630 parts In-Stock

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2,630

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Argo Parts USA

USA . 900 parts In-Stock

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900

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UNI Independent Distributors

Spain . 830 parts In-Stock

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Corphita

USA . 383 parts In-Stock

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383

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unlock the power of NXP Semiconductors with the BGA2003,115 RF & Microwave Amplifier. This high-quality component offers a wide band low power solution for your applications, providing a gain of 16 dB without compromising on performance. With a durable plastic/epoxy package body and efficient construction, this amplifier is designed to deliver reliable results. Whether you're in telecommunications, aerospace, or industrial automation, the BGA2003,115 offers unmatched value and benefits. Trust NXP Semiconductors to elevate your projects with cutting-edge technology and superior products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures a lightweight and durable design, making it suitable for portable and rugged applications.

Construction: COMPONENT

Component construction allows for easy integration into existing systems and flexibility in design configurations.

Power Supplies (V): 2.5

Low power supply requirement of 2.5V helps in reducing power consumption and heat dissipation, making it energy-efficient.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and solderability, ensuring a reliable electrical connection.

Technology: BIPOLAR

Bipolar technology offers high linearity and low noise performance, making it ideal for high-quality signal amplification.

Maximum Supply Current: 15 mA

Low supply current of 15mA results in lower power consumption and prevents overheating of the device.

RF or Microwave Device Type: WIDE BAND LOW POWER

Wide band coverage and low power operation make this amplifier suitable for a variety of RF and microwave applications with minimal power consumption.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance matches well with standard RF systems, ensuring optimal signal transfer and minimal signal loss.

Gain: 16 dB

With a gain of 16dB, this amplifier can boost signal strength effectively, improving overall system performance.

Minimum Operating Frequency: 900 MHz

Operating at a minimum frequency of 900MHz allows for signal amplification in a wide frequency range, making it versatile for various applications.

Maximum Operating Frequency: 1800 MHz

Capable of operating at frequencies up to 1800MHz, providing flexibility and coverage for a range of RF and microwave signals.

Technical Specifications

RF & Microwave Amplifiers BGA2003,115 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16 dB

JESD-609 Code:

e3

No. of Functions:

1

Maximum Operating Frequency:

1800 MHz

Minimum Operating Frequency:

900 MHz

Package Body Material:

Package Equivalence Code:

SOT-343R

Power Supplies (V):

2.5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

15 mA

Technology:

Terminal Finish:

Tin (Sn)

Trade Compliance

BGA2003,115 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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