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BGA2800

NXP Semiconductors

BGA2800 by NXP Semiconductors

NXP Semiconductors' BGA2800 is a wide band low power RF amplifier with 18.7 dB gain, operating from 0 to 2200 MHz. It can handle up to -16.5 dBm input power and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,624 parts In-Stock

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4,624

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Digiode

USA . 3,882 parts In-Stock

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3,882

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VNN

France . 2,817 parts In-Stock

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2,817

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Anansix

USA . 496 parts In-Stock

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496

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 297 parts In-Stock

1+ parts

$2.229

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297

$2.229

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Ampacity Inc.

Singapore . 1,363 parts In-Stock

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$10.000

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1,363

$10.000

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One Stop Electronics

USA . 921 parts In-Stock

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$11.000

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921

$11.000

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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A-Z Elektronik GmbH

Germany . 5,643 parts In-Stock

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5,643

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UNI Independent Distributors

Spain . 5,102 parts In-Stock

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5,102

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Continental Prestige Electronics

USA . 4,394 parts In-Stock

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4,394

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Alle Elektronik GmbH

Germany . 3,762 parts In-Stock

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3,762

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Corphita

USA . 3,469 parts In-Stock

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3,469

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Argo Parts USA

USA . 2,859 parts In-Stock

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2,859

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Experience unmatched performance and reliability with the BGA2800 by NXP Semiconductors. As a leading manufacturer in RF & Microwave Amplifiers, NXP delivers cutting-edge technology for a wide range of applications. The BGA2800 offers exceptional value with its high gain of 18.7 dB and wide frequency range of 0-2200 MHz, making it ideal for various communication systems. Trust NXP Semiconductors to provide top-quality components that exceed expectations and enhance your projects. Elevate your designs with the BGA2800 today.

Feature Benefit Bullets

Maximum Input Power (CW) -16.5 dBm

The low input power requirement makes this amplifier suitable for use with a wide range of signal sources and minimizes the risk of damage from high input power levels.

Maximum Operating Temperature 85 °C

The high maximum operating temperature ensures reliability and performance in various environmental conditions.

Minimum Operating Temperature -40 °C

The low minimum operating temperature allows for use in cold environments without sacrificing performance.

Terminal Finish TIN

The use of TIN terminal finish provides good conductivity and resistance to corrosion, ensuring long-term reliability.

RF or Microwave Device Type WIDE BAND LOW POWER

Wide band and low power characteristics make this amplifier suitable for a variety of applications that require a broad frequency range and low power consumption.

Characteristic Impedance 50 ohm

The standard 50 ohm impedance allows for easy integration into existing RF systems and ensures optimal signal transfer.

Gain 18.7 dB

The high gain of 18.7 dB amplifies weak signals effectively, improving the overall signal-to-noise ratio and enhancing system performance.

Minimum Operating Frequency 0 MHz

The ability to operate at 0 MHz ensures compatibility with a wide range of signal sources and applications requiring low frequency signals.

Maximum Operating Frequency 2200 MHz

The high maximum operating frequency of 2200 MHz makes this amplifier suitable for applications that require signal amplification in the microwave frequency range.

Technical Specifications

RF & Microwave Amplifiers BGA2800 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

18.7 dB

Maximum Input Power (CW):

-16.5 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

2200 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

TIN

Trade Compliance

BGA2800 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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