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HMC963LC4TR-R5

Analog Devices

HMC963LC4TR-R5 by Analog Devices

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.

Median Price

$53.571

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 1,000 parts In-Stock

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$53.571

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Nova Conductors

Japan . 84 parts In-Stock

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$56.250

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Digiode

USA . 560 parts In-Stock

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$64.334

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Vyrian

USA . 6,745 parts In-Stock

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AZTECH Wire

Italy . 541 parts In-Stock

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$12.880

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541

$12.880

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Ampacity Inc.

Singapore . 530 parts In-Stock

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$45.540

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Continental Prestige Electronics

USA . 5,450 parts In-Stock

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$56.250

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$55.125

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Netroflash

USA . 2,000 parts In-Stock

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$56.250

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Corphita

USA . 234 parts In-Stock

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$60.948

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Advanced Electronics

New Zealand . 3,795 parts In-Stock

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$218.121

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$198.490

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$178.859

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Argo Parts USA

USA . 1,762 parts In-Stock

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Overview

Elevate your RF and microwave applications with the high-quality HMC963LC4TR-R5 by Analog Devices. As a trusted manufacturer in the industry, Analog Devices delivers unparalleled performance, reliability, and innovation. This wide band low power amplifier offers a gain of 16.5 dB, ensuring optimal signal strength and clarity for your projects. Whether you're working on wireless communication systems, radar systems, or satellite communications, this amplifier's advanced technology and precision engineering provide the value and benefits you need to take your designs to the next level. Experience the difference with Analog Devices.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal and electrical properties, ensuring stable performance and reliability.

Maximum Input Power (CW): 0 dBm

Can handle a maximum continuous wave input power of 0 dBm, making it suitable for low power applications.

Maximum Voltage Standing Wave Ratio: 1.92

Low VSWR indicates efficient power transfer and minimal signal reflections.

Construction: COMPONENT

Component-based construction allows for flexibility and customization in various RF and microwave system designs.

Power Supplies (V): 3.5

Operates efficiently at a power supply voltage of 3.5V, providing compatibility with standard power sources.

No. of Terminals: 24

Having 24 terminals offers connectivity options for various input/output configurations and system integration.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures up to 85°C, suitable for demanding environmental conditions.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, it can function reliably in cold environments as well.

Terminal Finish: Gold (Au) - with Nickel (Ni) barrier

Gold finish with nickel barrier ensures excellent conductivity and corrosion resistance for long-term performance.

Technology: PHEMT

Employing PHEMT technology enables high gain, low noise, and high linearity characteristics for superior amplifier performance.

Maximum Supply Current: 65 mA

Requires a low supply current of 65mA, making it energy-efficient and suitable for battery-operated devices.

RF or Microwave Device Type: WIDE BAND LOW POWER

Designed as a wideband low-power amplifier, offering broad frequency coverage and efficient power consumption.

Characteristic Impedance: 50 ohm

Compatible with standard 50 ohm systems, ensuring seamless integration into existing RF setups.

Gain: 16.5 dB

Provides a gain of 16.5 dB, amplifying weak signals without introducing significant noise or distortion.

Minimum Operating Frequency: 6000 MHz

Supports operation from 6 GHz onwards, suitable for applications requiring high-frequency amplification.

Mounting Feature: SURFACE MOUNT

Surface mount design simplifies installation and integration into compact electronic systems with ease.

Maximum Operating Frequency: 26500 MHz

Capable of amplifying signals up to 26.5 GHz, making it ideal for applications in microwave frequency ranges.

Technical Specifications

RF & Microwave Amplifiers HMC963LC4TR-R5 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16.5 dB

Maximum Input Power (CW):

0 dBm

JESD-609 Code:

e4

Mounting Feature:

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Frequency:

26500 MHz

Minimum Operating Frequency:

6000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC24,.16SQ,20

Power Supplies (V):

3.5

RF or Microwave Device Type:

Maximum Supply Current:

65 mA

Technology:

Terminal Finish:

Gold (Au) - with Nickel (Ni) barrier

Maximum Voltage Standing Wave Ratio:

1.92

Trade Compliance

HMC963LC4TR-R5 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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