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RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.

RF & Microwave Amplifiers

Available Parts 644

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
AVT-50663-BLKG by Broadcom

AVT-50663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

13.8 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

39.5 mA

BIPOLAR

Tin (Sn)

AVT-50663-TR1G by Broadcom

AVT-50663-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

13.8 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

39.5 mA

BIPOLAR

Tin (Sn)

AVT-52663-BLKG by Broadcom

AVT-52663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

13.8 dB

18 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

49 mA

BIPOLAR

Tin (Sn)

AVT-52663-TR1G by Broadcom

AVT-52663-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

13.8 dB

18 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

49 mA

BIPOLAR

Tin (Sn)

MGA-645T6-TR1G by Broadcom

MGA-645T6-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1500 MHz;

LOW NOISE

50 ohm

COMPONENT

13.5 dB

15 dBm

e4

SURFACE MOUNT

1

6

3000 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-645T6-TR2G by Broadcom

MGA-645T6-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

LOW NOISE

50 ohm

COMPONENT

13.5 dB

15 dBm

e4

SURFACE MOUNT

1

6

3000 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Gold (Au) - with Nickel (Ni) barrier

AMMP-6222-TR1G by Broadcom

AMMP-6222-TR1G

Broadcom

AMMP-6222-TR1G by Broadcom is a wide band low power RF amplifier with 23 dB gain. It operates from 7 GHz to 21 GHz, suitable for high-frequency applications. With a max input power of 10 dBm and compact surface mount construction, it is ideal for RF and microwave systems requiring amplification in the 50 ohm impedance range.

LOW NOISE

50 ohm

COMPONENT

23 dB

10 dBm

e4

SURFACE MOUNT

1

8

21000 MHz

7000 MHz

PLASTIC/EPOXY

LCC8(UNSPEC)

4

WIDE BAND LOW POWER

RF/Microwave Amplifiers

160 mA

Nickel/Gold (Ni/Au)

MAX2644EXT-T by Maxim Integrated

MAX2644EXT-T

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: TIN LEAD;

50 ohm

COMPONENT

15 dB

5 dBm

e0

SURFACE MOUNT

1

6

2500 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND MEDIUM POWER

11 mA

BIPOLAR

TIN LEAD

MAX2130EUA by Maxim Integrated

MAX2130EUA

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e0; Gain: 7.1 dB;

75 ohm

COMPONENT

7.1 dB

15 dBm

e0

SURFACE MOUNT

1

8

878 MHz

44 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP8,.19

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

104 mA

TIN LEAD

2

MAX2371EGC by Maxim Integrated

MAX2371EGC

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Maximum Input Power (CW): 5 dBm; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

10.5 dB

5 dBm

e0

SURFACE MOUNT

1

12

174 MHz

136 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.12SQ,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

Tin/Lead (Sn85Pb15)

AMF-3F-17701970-45-8P by L-3 Narda-miteq

AMF-3F-17701970-45-8P

L-3 Narda-miteq

AMF-3F-17701970-45-8P by L-3 Narda-miteq is a COAXIAL RF amplifier with 24 dB gain. It operates in the frequency range of 17.7 - 19.7 GHz, making it ideal for wideband low-power applications. With a VSWR of 2, this amplifier ensures efficient signal transmission in RF and microwave systems.

K/SMA

COAXIAL

24 dB

19700 MHz

17700 MHz

WIDE BAND LOW POWER

2

AMF-4F-02200230-15-13P by L-3 Narda-miteq

AMF-4F-02200230-15-13P

L-3 Narda-miteq

AMF-4F-02200230-15-13P by L-3 Narda-miteq is a COAXIAL RF amplifier with 58 dB Gain, VSWR of 1.5, operating from 2200 MHz to 2300 MHz. Ideal for narrowband low-power applications in RF & Microwave systems.

SMA-F

COAXIAL

58 dB

2300 MHz

2200 MHz

NARROW BAND LOW POWER

1.5

MAX2632EUS-T by Maxim Integrated

MAX2632EUS-T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e0;

LOW NOISE

50 ohm

COMPONENT

11 dB

5 dBm

e0

SURFACE MOUNT

4

1000 MHz

800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-253

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

11 mA

BIPOLAR

Tin/Lead (Sn/Pb)

1.25

MAX2641EUT by Maxim Integrated

MAX2641EUT

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 6.4 mA;

50 ohm

COMPONENT

12.4 dB

5 dBm

e0

SURFACE MOUNT

1

6

2500 MHz

1400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSOP6,.11,37

3/5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

6.4 mA

BIPOLAR

TIN LEAD

MAX2473EUT by Maxim Integrated

MAX2473EUT

Maxim Integrated

WIDE BAND LOW POWER; Construction: COMPONENT; JESD-609 Code: e0; Gain: 6 dB; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2500 MHz;

50 ohm

COMPONENT

6 dB

10 dBm

e0

2500 MHz

500 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

TIN LEAD

THS9000DRDR by Texas Instruments

THS9000DRDR

Texas Instruments

THS9000DRDR by Texas Instruments is a wide band medium power RF amplifier with 15.6 dB gain, operating from 50 MHz to 400 MHz. It has a characteristic impedance of 50 ohm and can withstand temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

50 ohm

COMPONENT

15.6 dB

400 MHz

50 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

MAX2130EUA-T by Maxim Integrated

MAX2130EUA-T

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Gain: 7.1 dB; Package Equivalence Code: TSSOP8,.19;

75 ohm

COMPONENT

7.1 dB

15 dBm

e0

SURFACE MOUNT

1

8

878 MHz

44 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP8,.19

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

104 mA

Tin/Lead (Sn85Pb15)

2

MAX2232EEE-T by Maxim Integrated

MAX2232EEE-T

Maxim Integrated

NARROW BAND MEDIUM POWER; Gain: 23.9 dB; JESD-609 Code: e0; Additional Features: IT CAN ALSO OPERATE AT 800 TO 1000 MHZ; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 10 dBm;

IT CAN ALSO OPERATE AT 800 TO 1000 MHZ

50 ohm

COMPONENT

23.9 dB

10 dBm

e0

1000 MHz

800 MHz

85 Cel

-40 Cel

NARROW BAND MEDIUM POWER

TIN LEAD

1.5

MAX2373EGC-T by Maxim Integrated

MAX2373EGC-T

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Package Equivalence Code: LCC12,.12SQ,20; Maximum Input Power (CW): 5 dBm;

50 ohm

COMPONENT

10.5 dB

5 dBm

e0

SURFACE MOUNT

1

12

940 MHz

850 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.12SQ,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

Tin/Lead (Sn/Pb)

MAX2611EUS-T by Maxim Integrated

MAX2611EUS-T

Maxim Integrated

MAX2611EUS-T by Maxim Integrated is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for applications requiring surface mount construction in RF & microwave systems.

LOW NOISE

50 ohm

COMPONENT

17.3 dB

13 dBm

e0

SURFACE MOUNT

1

4

1100 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-253

3.8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

TIN LEAD

1.6

MAX2645EUB-T by Maxim Integrated

MAX2645EUB-T

Maxim Integrated

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 16 dBm; Terminal Finish: TIN LEAD; Characteristic Impedance: 50 ohm; Gain: 12.9 dB; JESD-609 Code: e0;

50 ohm

COMPONENT

12.9 dB

16 dBm

e0

3800 MHz

3400 MHz

85 Cel

-40 Cel

NARROW BAND MEDIUM POWER

TIN LEAD

CC2590RGVT by Texas Instruments

CC2590RGVT

Texas Instruments

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Terminal Finish: NICKEL PALLADIUM GOLD;

LOW NOISE

COMPONENT

14.1 dB

10 dBm

e4

SURFACE MOUNT

1

16

2483.5 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

3

NARROW BAND LOW POWER

NICKEL PALLADIUM GOLD

AD8350ARMZ20 by Analog Devices

AD8350ARMZ20

Analog Devices

AD8350ARMZ20 by Analog Devices is a wide band medium power RF amplifier with 19 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it ideal for RF applications requiring high performance in the -40 to 85°C temperature range.

200 ohm

COMPONENT

19 dB

8 dBm

e3

1000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

MATTE TIN

WS1103-TR1 by Broadcom

WS1103-TR1

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 849 MHz;

50 ohm

COMPONENT

14 dB

10 dBm

SURFACE MOUNT

1

8

849 MHz

824 MHz

85 Cel

-30 Cel

PLASTIC/EPOXY

SOLCC8,.11,32

3.4

NARROW BAND LOW POWER

RF/Microwave Amplifiers

515 mA

2.5

CC2590RGVRG4 by Texas Instruments

CC2590RGVRG4

Texas Instruments

CC2590RGVRG4 by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and is ideal for narrowband low-power applications in temperatures ranging from -40 to 85°C.

LOW NOISE

COMPONENT

14.1 dB

10 dBm

e4

SURFACE MOUNT

1

16

2483.5 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

3

NARROW BAND LOW POWER

NICKEL PALLADIUM GOLD

SKY65013-70LF by Skyworks Solutions

SKY65013-70LF

Skyworks Solutions

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 7000 MHz; Gain: 12.5 dB;

50 ohm

COMPONENT

12.5 dB

15 dBm

SURFACE MOUNT

1

3

7000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-243

3.5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

2

SKY65015-92LF by Skyworks Solutions

SKY65015-92LF

Skyworks Solutions

SKY65015-92LF by Skyworks Solutions is a GAAS RF amplifier with 18dB gain, 50 ohm impedance, and 6000 MHz operating frequency. It's used in wideband low-power applications, offering a max input power of 15 dBm and VSWR of 2 for surface mounting at temperatures ranging from -45 to 85°C.

50 ohm

COMPONENT

18 dB

15 dBm

SURFACE MOUNT

1

3

6000 MHz

85 Cel

-45 Cel

PLASTIC/EPOXY

TO-243

4.7

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

2

ALM-GA001-BLKG by Broadcom

ALM-GA001-BLKG

Broadcom

WIDE BAND LOW POWER; Gain: 16.2 dB; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Additional Features: CMOS COMPATIBLE; Minimum Operating Temperature: -40 Cel;

CMOS COMPATIBLE

COMPONENT

16.2 dB

13 dBm

3500 MHz

900 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

ALM-GA001-TR1G by Broadcom

ALM-GA001-TR1G

Broadcom

WIDE BAND LOW POWER; Additional Features: CMOS COMPATIBLE; Minimum Operating Frequency: 900 MHz; Maximum Input Power (CW): 13 dBm; Gain: 16.2 dB; Maximum Operating Temperature: 85 Cel;

CMOS COMPATIBLE

COMPONENT

16.2 dB

13 dBm

3500 MHz

900 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

AD8353ACP-R2 by Analog Devices

AD8353ACP-R2

Analog Devices

AD8353ACP-R2 by Analog Devices is a wide band low power RF amplifier with 15.6 dB gain, operating from 1 MHz to 2700 MHz. It has a max input power of 10 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is housed in a plastic/epoxy package with surface mounting feature.

50 ohm

COMPONENT

15.6 dB

10 dBm

e0

SURFACE MOUNT

1

8

2700 MHz

1 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

52 mA

Tin/Lead (Sn85Pb15)

SMA661ASTR by STMicroelectronics

SMA661ASTR

STMicroelectronics

SMA661ASTR by STMicroelectronics is a wide-band low-power RF amplifier with 18 dB gain, operating b/w -40 °C and 85 °C. It features a 6-terminal surface mount design and requires a power supply of 2.7V. Ideal for RF applications in compact devices.

LOW NOISE

50 ohm

COMPONENT

18 dB

e4

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

FL6,.047,20

2.7

WIDE BAND LOW POWER

RF/Microwave Amplifiers

BICMOS

Nickel/Palladium/Gold (Ni/Pd/Au)

AD8350ARZ15-REEL7 by Analog Devices

AD8350ARZ15-REEL7

Analog Devices

AD8350ARZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

200 ohm

COMPONENT

14 dB

8 dBm

e3

1000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

MATTE TIN

AD8350ARMZ20-REEL7 by Analog Devices

AD8350ARMZ20-REEL7

Analog Devices

AD8350ARMZ20-REEL7 by Analog Devices is a RF amplifier with 19 dB gain, 1000 MHz max frequency, and 8 dBm CW input power. It operates b/w -40 to 85 °C and has a characteristic impedance of 200 ohm. Ideal for wideband medium power applications in RF & microwave systems.

200 ohm

COMPONENT

19 dB

8 dBm

e3

1000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

MATTE TIN

THS9000DRWR by Texas Instruments

THS9000DRWR

Texas Instruments

THS9000DRWR by Texas Instruments is a wide band medium power RF amplifier with 15.7 dB gain, operating from 50 MHz to 400 MHz. It has a max supply current of 100 mA and operates in temperatures ranging from -40°C to 85°C. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

50 ohm

COMPONENT

15.7 dB

e4

SURFACE MOUNT

1

6

400 MHz

50 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

5

WIDE BAND MEDIUM POWER

100 mA

NICKEL PALLADIUM GOLD SILVER

THS9001DBVRG4 by Texas Instruments

THS9001DBVRG4

Texas Instruments

THS9001DBVRG4 by Texas Instruments is a wide band medium power RF amplifier with 15 dB gain. Operating from -40 to 85°C, it has a frequency range of 50-350 MHz and impedance of 50 ohm. Ideal for RF & microwave applications requiring amplification in this frequency range.

50 ohm

COMPONENT

15 dB

350 MHz

50 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

TRF1123IRTMTG3 by Texas Instruments

TRF1123IRTMTG3

Texas Instruments

TRF1123IRTMTG3 by Texas Instruments is a RF amplifier with 26dB gain, operating frequency range of 2100-2700MHz, and 20dBm max input power. Ideal for narrow band medium power applications requiring surface mounting feature and 50 ohm characteristic impedance.

50 ohm

COMPONENT

26 dB

20 dBm

e3

SURFACE MOUNT

1

32

2700 MHz

2100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

7

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

700 mA

Matte Tin (Sn)

MAX2056ETX by Maxim Integrated

MAX2056ETX

Maxim Integrated

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Gain: 15.5 dB; Terminal Finish: TIN LEAD; Construction: COMPONENT; JESD-609 Code: e0;

50 ohm

COMPONENT

15.5 dB

20 dBm

e0

1000 MHz

800 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

TIN LEAD

MAX2057ETX by Maxim Integrated

MAX2057ETX

Maxim Integrated

NARROW BAND MEDIUM POWER; Gain: 13.5 dB; Terminal Finish: TIN LEAD; Construction: COMPONENT; Maximum Operating Frequency: 2500 MHz; Maximum Operating Temperature: 85 Cel;

50 ohm

COMPONENT

13.5 dB

20 dBm

e0

2500 MHz

1700 MHz

85 Cel

-40 Cel

NARROW BAND MEDIUM POWER

TIN LEAD

ALM-1712-BLKG by Broadcom

ALM-1712-BLKG

Broadcom

NARROW BAND LOW POWER; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: MODULE,12LEAD(UNSPEC); Maximum Input Power (CW): 15 dBm; Gain: 11 dB;

LOW NOISE

50 ohm

COMPONENT

11 dB

15 dBm

1

12

PLASTIC/EPOXY

MODULE,12LEAD(UNSPEC)

1.8/2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

15 mA

ALM-1712-TR1G by Broadcom

ALM-1712-TR1G

Broadcom

NARROW BAND LOW POWER; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Maximum Supply Current: 15 mA; No. of Functions: 1; Gain: 11 dB;

LOW NOISE

50 ohm

COMPONENT

11 dB

15 dBm

1

12

PLASTIC/EPOXY

MODULE,12LEAD(UNSPEC)

1.8/2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

15 mA

ALM-32120-BLKG by Broadcom

ALM-32120-BLKG

Broadcom

ALM-32120-BLKG by Broadcom is a wide band medium power RF amplifier with a gain of 12.5 dB. It operates at frequencies ranging from 700 MHz to 1000 MHz and has a max input power of 28 dBm. This component, made of plastic/epoxy, is commonly used in RF and microwave applications.

50 ohm

COMPONENT

12.5 dB

28 dBm

1

1000 MHz

700 MHz

PLASTIC/EPOXY

MODULE(UNSPEC)

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

910 mA

GAAS

ALM-32120-TR1G by Broadcom

ALM-32120-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1; Maximum Input Power (CW): 28 dBm; Maximum Supply Current: 910 mA;

50 ohm

COMPONENT

12.5 dB

28 dBm

1

1000 MHz

700 MHz

PLASTIC/EPOXY

MODULE(UNSPEC)

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

910 mA

GAAS

ALM-32120-TR2G by Broadcom

ALM-32120-TR2G

Broadcom

WIDE BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12.5 dB; Package Equivalence Code: MODULE(UNSPEC); Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

12.5 dB

28 dBm

1

1000 MHz

700 MHz

PLASTIC/EPOXY

MODULE(UNSPEC)

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

910 mA

GAAS

AMMC-6442-W10 by Broadcom

AMMC-6442-W10

Broadcom

WIDE BAND MEDIUM POWER; No. of Functions: 1; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 5; Minimum Operating Frequency: 37000 MHz; Maximum Input Power (CW): 20 dBm;

50 ohm

COMPONENT

20 dB

20 dBm

1

40000 MHz

37000 MHz

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

AMMC-6442-W50 by Broadcom

AMMC-6442-W50

Broadcom

WIDE BAND MEDIUM POWER; No. of Functions: 1; Maximum Input Power (CW): 20 dBm; Power Supplies (V): 5; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP;

50 ohm

COMPONENT

20 dB

20 dBm

1

40000 MHz

37000 MHz

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

AMMP-6333-BLKG by Broadcom

AMMP-6333-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Minimum Operating Frequency: 18000 MHz;

50 ohm

COMPONENT

18 dB

20 dBm

e4

SURFACE MOUNT

1

8

33000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8,.2SQ,28

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

230 mA

Nickel/Gold (Ni/Au)

AMMP-6333-TR1G by Broadcom

AMMP-6333-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Power Supplies (V): 5;

50 ohm

COMPONENT

18 dB

20 dBm

e4

SURFACE MOUNT

1

8

33000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8,.2SQ,28

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

230 mA

Nickel/Gold (Ni/Au)

AMMP-6333-TR2G by Broadcom

AMMP-6333-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 20 dBm; Package Equivalence Code: LCC8,.2SQ,28;

50 ohm

COMPONENT

18 dB

20 dBm

SURFACE MOUNT

1

8

33000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8,.2SQ,28

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

5 V