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THS9000DRDR

Texas Instruments

THS9000DRDR by Texas Instruments

THS9000DRDR by Texas Instruments is a wide band medium power RF amplifier with 15.6 dB gain, operating from 50 MHz to 400 MHz. It has a characteristic impedance of 50 ohm and can withstand temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,496 parts In-Stock

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2,496

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Digiode

USA . 1,537 parts In-Stock

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1,537

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Distributors (Availability)

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Parana Technologies

USA . 2,106 parts In-Stock

1+ parts

$0.898

100+ parts

-

1k+ parts

$1.828

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2,106

$0.898

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$1.828

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IDEA Electronic Components Group

UK . 2,188 parts In-Stock

1+ parts

$1.009

100+ parts

-

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$0.908

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2,188

$1.009

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$0.908

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ChromeModa Solutions

Germany . 838 parts In-Stock

1+ parts

$1.009

100+ parts

$0.827

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-

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838

$1.009

$0.827

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AZTECH Wire

Italy . 853 parts In-Stock

1+ parts

$6.268

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853

$6.268

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One Stop Electronics

USA . 1,254 parts In-Stock

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$15.000

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1,254

$15.000

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Semicontronic

India . 298 parts In-Stock

1+ parts

$24.000

100+ parts

$23.400

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$23.280

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298

$24.000

$23.400

$23.280

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Ampacity Inc.

Singapore . 443 parts In-Stock

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$31.000

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443

$31.000

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QUARKTWIN TECHNOLOGY LTD

USA . 23,319 parts In-Stock

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23,319

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Corphita

USA . 3,095 parts In-Stock

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3,095

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DigiPath Technology Company

USA . 1,658 parts In-Stock

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100+ parts

$0.910

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1,658

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$0.910

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Corohmni

South Africa . 114 parts In-Stock

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114

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Overview

Experience unparalleled performance and reliability with the THS9000DRDR by Texas Instruments. As a leader in the industry, Texas Instruments delivers exceptional quality RF & Microwave Amplifiers like no other. Ideal for wide band medium power applications, this component offers a gain of 15.6 dB and operates between 50 MHz to 400 MHz. With a maximum operating temperature of 85°C, this amplifier ensures optimal functionality even in challenging environments. Trust Texas Instruments for cutting-edge technology and elevate your projects to new heights with the THS9000DRDR.

Feature Benefit Bullets

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this RF & Microwave Amplifier is suitable for use in a variety of environments without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that this amplifier can still function effectively in colder conditions.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

Being a wide band medium power amplifier, it offers versatility in terms of frequency range and power output, making it suitable for a wide range of applications.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier can easily interface with other components and systems commonly used in RF and microwave applications.

Gain: 15.6 dB

The high gain of 15.6 dB amplifies the input signal significantly, resulting in a stronger output signal, which is advantageous in communication and signal processing systems.

Minimum Operating Frequency: 50 MHz

The ability to operate at a minimum frequency of 50 MHz allows this amplifier to cover a wide range of frequencies, making it suitable for various applications requiring lower frequency signals.

Maximum Operating Frequency: 400 MHz

With a maximum operating frequency of 400 MHz, this amplifier is capable of handling higher frequency signals, making it ideal for applications that require processing of signals in the 50-400 MHz range.

Technical Specifications

RF & Microwave Amplifiers THS9000DRDR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

15.6 dB

Maximum Operating Frequency:

400 MHz

Minimum Operating Frequency:

50 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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