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THS9000DRWR

Texas Instruments

THS9000DRWR by Texas Instruments

THS9000DRWR by Texas Instruments is a wide band medium power RF amplifier with 15.7 dB gain, operating from 50 MHz to 400 MHz. It has a max supply current of 100 mA and operates in temperatures ranging from -40°C to 85°C. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

Median Price

$1.232

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 168,422 parts In-Stock

1+ parts

$1.232

100+ parts

$1.018

1k+ parts

$0.550

10k+ parts

-

168,422

$1.232

$1.018

$0.550

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,323 parts In-Stock

1+ parts

$1.170

100+ parts

-

1k+ parts

-

10k+ parts

-

1,323

$1.170

-

-

-

Vyrian

USA . 7,834 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,834

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 168,282 parts In-Stock

1+ parts

$1.050

100+ parts

$1.024

1k+ parts

$1.018

10k+ parts

-

168,282

$1.050

$1.024

$1.018

-

Ampacity Inc.

Singapore . 168,228 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

168,228

$1.050

-

-

-

Corphita

USA . 1,642 parts In-Stock

1+ parts

$1.109

100+ parts

-

1k+ parts

-

10k+ parts

-

1,642

$1.109

-

-

-

Corohmni

South Africa . 80 parts In-Stock

1+ parts

$1.232

100+ parts

-

1k+ parts

-

10k+ parts

-

80

$1.232

-

-

-

Parana Technologies

USA . 1,487 parts In-Stock

1+ parts

$2.399

100+ parts

-

1k+ parts

$2.897

10k+ parts

-

1,487

$2.399

-

$2.897

-

ChromeModa Solutions

Germany . 1,582 parts In-Stock

1+ parts

$2.696

100+ parts

$2.211

1k+ parts

-

10k+ parts

-

1,582

$2.696

$2.211

-

-

IDEA Electronic Components Group

UK . 639 parts In-Stock

1+ parts

$2.696

100+ parts

-

1k+ parts

$2.426

10k+ parts

-

639

$2.696

-

$2.426

-

Component Stockers USA

USA . 8,873 parts In-Stock

1+ parts

$10.610

100+ parts

-

1k+ parts

-

10k+ parts

-

8,873

$10.610

-

-

-

AZTECH Wire

Italy . 1,131 parts In-Stock

1+ parts

$13.350

100+ parts

-

1k+ parts

-

10k+ parts

-

1,131

$13.350

-

-

-

A-Z Elektronik GmbH

Germany . 2,945 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,945

-

-

-

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DigiPath Technology Company

USA . 1,890 parts In-Stock

1+ parts

-

100+ parts

$2.431

1k+ parts

-

10k+ parts

-

1,890

-

$2.431

-

-

Overview

Enhance your RF and microwave amplifier applications with the THS9000DRWR by Texas Instruments. Known for their top-quality products, Texas Instruments delivers reliable solutions that guarantee superior performance. Whether you're looking to boost signal strength or improve signal integrity, this wide-band medium power amplifier with a gain of 15.7 dB is the perfect choice. With a temperature range of -40 to 85°C and a compact surface-mount package, this component offers unmatched value and efficiency for your projects. Experience the benefits of Texas Instruments' expertise in RF technology with the THS9000DRWR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the amplifier in various operating conditions.

Power Supplies (V): 5

Operating at a voltage of 5V allows for compatibility with a wide range of systems and equipment.

No. of Terminals: 6

Having 6 terminals provides flexibility in connections and integration with other components.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this amplifier can withstand demanding environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the amplifier remains functional even in extremely cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

The use of multiple high-quality finishes on terminals enhances conductivity and signal integrity.

Maximum Supply Current: 100 mA

Operating at a maximum supply current of 100mA ensures efficient power usage and prevents overheating.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

Being a wide band medium power device, this amplifier offers a balance between bandwidth coverage and power output for various applications.

Characteristic Impedance: 50 ohm

Having a characteristic impedance of 50 ohm ensures compatibility with standard RF systems and components.

Gain: 15.7 dB

With a gain of 15.7 dB, this amplifier can strengthen input signals for improved output performance.

Minimum Operating Frequency: 50 MHz

Operating at a minimum frequency of 50 MHz allows this amplifier to support a wide range of RF signals.

Mounting Feature: SURFACE MOUNT

The surface mount design simplifies the installation and integration of the amplifier into existing electronic systems.

Maximum Operating Frequency: 400 MHz

Supporting frequencies up to 400 MHz, this amplifier is suitable for a variety of RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers THS9000DRWR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

15.7 dB

JESD-609 Code:

e4

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

400 MHz

Minimum Operating Frequency:

50 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

5

RF or Microwave Device Type:

Maximum Supply Current:

100 mA

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Trade Compliance

THS9000DRWR RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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