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THS9000DRWTG4

Texas Instruments

THS9000DRWTG4 by Texas Instruments

THS9000DRWTG4 by Texas Instruments is a wide band medium power RF amplifier with gain of 15.6 dB, operating frequency range of 50-400 MHz, and characteristic impedance of 50 ohm. It is designed for applications requiring high-frequency signal amplification in environments ranging from -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,458 parts In-Stock

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7,458

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Digiode

USA . 406 parts In-Stock

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406

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Distributors (Availability)

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Parana Technologies

USA . 1,676 parts In-Stock

1+ parts

$2.432

100+ parts

-

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$2.929

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1,676

$2.432

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$2.929

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DigiPath Technology Company

USA . 988 parts In-Stock

1+ parts

$2.678

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-

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988

$2.678

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ChromeModa Solutions

Germany . 2,893 parts In-Stock

1+ parts

$2.733

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$2.241

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2,893

$2.733

$2.241

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IDEA Electronic Components Group

UK . 915 parts In-Stock

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$2.733

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$2.460

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915

$2.733

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$2.460

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AZTECH Wire

Italy . 430 parts In-Stock

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$19.344

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430

$19.344

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Ampacity Inc.

Singapore . 350 parts In-Stock

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$25.000

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350

$25.000

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One Stop Electronics

USA . 1,302 parts In-Stock

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$32.000

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1,302

$32.000

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Semicontronic

India . 974 parts In-Stock

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$39.000

100+ parts

$38.025

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$37.830

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974

$39.000

$38.025

$37.830

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Corphita

USA . 1,480 parts In-Stock

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1,480

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Corohmni

South Africa . 318 parts In-Stock

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318

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Overview

Unlock the potential of your RF and microwave applications with the THS9000DRWTG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers unmatched quality and reliability. Ideal for wideband medium power needs, this amplifier offers a gain of 15.6 dB and operates between 50 MHz to 400 MHz. Whether you're in telecommunications, aerospace, or research, this component ensures optimal performance and efficiency. Elevate your projects with the THS9000DRWTG4 and experience the difference today.

Feature Benefit Bullets

Maximum Operating Temperature: 85 °C

This amplifier can operate in high temperatures without any performance degradation, making it suitable for various environments.

Minimum Operating Temperature: -40 °C

The amplifier can also operate in low temperatures, ensuring consistent performance even in extreme conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of high-quality terminal finish materials ensures reliable connections and durability, extending the lifespan of the amplifier.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

Being a wideband medium power amplifier, it offers versatility in frequency range and power output, making it suitable for various applications.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance ensures optimal power transfer and compatibility with standard RF equipment.

Gain: 15.6 dB

With a gain of 15.6 dB, this amplifier can boost signal strength effectively, improving overall performance in RF and microwave systems.

Minimum Operating Frequency: 50 MHz

This amplifier can operate at a minimum frequency of 50 MHz, making it suitable for a wide range of RF and microwave applications.

Maximum Operating Frequency: 400 MHz

The ability to operate at a maximum frequency of 400 MHz provides flexibility for different use cases, ensuring compatibility with various RF systems.

Technical Specifications

RF & Microwave Amplifiers THS9000DRWTG4 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

15.6 dB

JESD-609 Code:

e4

Maximum Operating Frequency:

400 MHz

Minimum Operating Frequency:

50 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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