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THS9000DRDT

Texas Instruments

THS9000DRDT by Texas Instruments

THS9000DRDT by Texas Instruments is a wide band medium power RF amplifier with 15.6 dB gain, operating from 50 MHz to 400 MHz. It has a characteristic impedance of 50 ohm and can withstand temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

Median Price

$1.950

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,475 parts In-Stock

1+ parts

-

100+ parts

$1.750

1k+ parts

$1.560

10k+ parts

$1.470

1,475

-

$1.750

$1.560

$1.470

DigiKey

USA . 1,475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.030

10k+ parts

-

1,475

-

-

$2.030

-

Verical

USA . 1,475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.950

10k+ parts

$1.837

1,475

-

-

$1.950

$1.837

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,527 parts In-Stock

1+ parts

$1.852

100+ parts

-

1k+ parts

-

10k+ parts

-

1,527

$1.852

-

-

-

Vyrian

USA . 1,649 parts In-Stock

1+ parts

$1.950

100+ parts

-

1k+ parts

-

10k+ parts

-

1,649

$1.950

-

-

-

DigiKey Marketplace

USA . 1,475 parts In-Stock

1+ parts

-

100+ parts

$2.030

1k+ parts

-

10k+ parts

-

1,475

-

$2.030

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 696 parts In-Stock

1+ parts

$0.892

100+ parts

-

1k+ parts

$1.824

10k+ parts

-

696

$0.892

-

$1.824

-

DigiPath Technology Company

USA . 126 parts In-Stock

1+ parts

$0.982

100+ parts

-

1k+ parts

-

10k+ parts

-

126

$0.982

-

-

-

ChromeModa Solutions

Germany . 3,457 parts In-Stock

1+ parts

$1.002

100+ parts

$0.822

1k+ parts

-

10k+ parts

-

3,457

$1.002

$0.822

-

-

IDEA Electronic Components Group

UK . 2,093 parts In-Stock

1+ parts

$1.002

100+ parts

-

1k+ parts

$0.902

10k+ parts

-

2,093

$1.002

-

$0.902

-

Corphita

USA . 2,423 parts In-Stock

1+ parts

$1.755

100+ parts

-

1k+ parts

-

10k+ parts

-

2,423

$1.755

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 12,642 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,642

-

-

-

-

Overview

Experience superior performance and reliability with the THS9000DRDT by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch RF & Microwave Amplifiers that are perfect for a wide range of applications. From wide band medium power amplification to precise signal processing, this component is designed to meet your needs. Enhance your projects with the exceptional gain and temperature range offered by this product, providing unmatched value and benefits to customers looking for quality solutions.

Feature Benefit Bullets

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this RF & Microwave Amplifier can withstand high temperatures, ensuring reliable performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40°C allows for operation in cold environments, making this amplifier suitable for a wide range of temperature conditions.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

Being a wide-band medium power amplifier, this product offers versatility in terms of frequency range coverage and power output, making it an ideal choice for different applications.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance ensures compatibility with standard RF and microwave systems, facilitating easy integration and use.

Gain: 15.6 dB

With a gain of 15.6 dB, this amplifier can boost the signal strength significantly, improving overall system performance and signal quality.

Minimum Operating Frequency: 50 MHz

The ability to operate at frequencies as low as 50 MHz makes this amplifier suitable for applications that require amplification at lower frequency ranges.

Maximum Operating Frequency: 400 MHz

Capable of operating at frequencies up to 400 MHz, this amplifier provides a wide frequency range coverage, making it suitable for a variety of RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers THS9000DRDT attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

15.6 dB

Maximum Operating Frequency:

400 MHz

Minimum Operating Frequency:

50 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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