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THS9000DRWRG4

Texas Instruments

THS9000DRWRG4 by Texas Instruments

THS9000DRWRG4 by Texas Instruments is a wide band medium power RF amplifier with 15.6 dB gain, operating from 50 MHz to 400 MHz. It has a temperature range of -40°C to 85°C and features nickel/palladium/gold terminal finish. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,838 parts In-Stock

1+ parts

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7,838

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Digiode

USA . 1,735 parts In-Stock

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1,735

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,474 parts In-Stock

1+ parts

$2.000

100+ parts

-

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1,474

$2.000

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Parana Technologies

USA . 586 parts In-Stock

1+ parts

$2.638

100+ parts

-

1k+ parts

$3.127

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586

$2.638

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$3.127

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DigiPath Technology Company

USA . 808 parts In-Stock

1+ parts

$2.905

100+ parts

$2.672

1k+ parts

-

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808

$2.905

$2.672

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ChromeModa Solutions

Germany . 2,285 parts In-Stock

1+ parts

$2.964

100+ parts

$2.430

1k+ parts

-

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2,285

$2.964

$2.430

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IDEA Electronic Components Group

UK . 1,986 parts In-Stock

1+ parts

$2.964

100+ parts

-

1k+ parts

$2.668

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1,986

$2.964

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$2.668

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One Stop Electronics

USA . 454 parts In-Stock

1+ parts

$5.000

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454

$5.000

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AZTECH Wire

Italy . 544 parts In-Stock

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$17.958

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544

$17.958

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Semicontronic

India . 1,569 parts In-Stock

1+ parts

$30.000

100+ parts

$29.250

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$29.100

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1,569

$30.000

$29.250

$29.100

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Corphita

USA . 2,087 parts In-Stock

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2,087

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Corohmni

South Africa . 251 parts In-Stock

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Overview

Enhance your RF and microwave amplifier needs with the THS9000DRWRG4 by Texas Instruments. With a reputation for top-quality components, Texas Instruments delivers exceptional performance and reliability in the RF & Microwave Amplifiers category. This wide band medium power amplifier offers a gain of 15.6 dB, making it perfect for a variety of applications. From aerospace to telecommunications, this component is designed to meet your requirements with a temperature range from -40°C to 85°C. Trust Texas Instruments to provide you with the value and benefits you need to succeed in your projects.

Feature Benefit Bullets

Maximum Operating Temperature: 85 °C

Allows for operation in a wide range of environmental conditions, making it versatile and reliable.

Minimum Operating Temperature: -40 °C

Ensures the amplifier can function even in very cold temperatures, making it suitable for various applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Provides excellent corrosion resistance and good conductivity, enhancing the durability and performance of the amplifier.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

Suitable for applications requiring medium power amplification across a wide frequency band, offering versatility in usage.

Characteristic Impedance: 50 ohm

Matches the impedance of common RF systems, ensuring efficient power transfer and signal integrity.

Gain: 15.6 dB

Offers significant amplification of the input signal, improving the overall signal strength and quality.

Minimum Operating Frequency: 50 MHz

Suitable for amplifying signals starting from 50 MHz, catering to a wide range of frequency requirements.

Maximum Operating Frequency: 400 MHz

Capable of handling signals up to 400 MHz, making it suitable for a variety of RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers THS9000DRWRG4 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

15.6 dB

JESD-609 Code:

e4

Maximum Operating Frequency:

400 MHz

Minimum Operating Frequency:

50 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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