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MAX2659ELT/V+

Analog Devices

MAX2659ELT/V+ by Analog Devices

Analog Devices' MAX2659ELT/V+ is a BICMOS RF amplifier with 16.5 dB gain and 50 ohm impedance. It operates at temperatures from -40 to 85 °C, with a max input power of 10 dBm. Ideal for narrow band low power applications, it has a compact surface mount package with 6 terminals.

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5

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1k+

MAX2659ELT/V+ by Analog Devices
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Analog Devices Inc

USA . 533 parts In-Stock

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Anansix

USA . 2,384 parts In-Stock

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Digiode

USA . 1,720 parts In-Stock

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1,720

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Nova Conductors

Japan . 700 parts In-Stock

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Vyrian

USA . 255 parts In-Stock

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MARBEL Systems

Belgium . 5,958 parts In-Stock

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$1.455

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$1.455

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Texas Native Microelectronics

USA . 1,313 parts In-Stock

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$1.672

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$1.605

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$1.555

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$1.471

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Kenton Components

USA . 408 parts In-Stock

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$2.006

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$1.766

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Qasali Group International

UK . 200 parts In-Stock

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$4.514

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$4.198

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$3.973

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AZTECH Wire

Italy . 666 parts In-Stock

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$14.225

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Ampacity Inc.

Singapore . 496 parts In-Stock

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$26.000

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Semicontronic

India . 212 parts In-Stock

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$36.000

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$35.100

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$34.920

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Corphita

USA . 1,738 parts In-Stock

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Continental Prestige Electronics

USA . 1,401 parts In-Stock

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Argo Parts USA

USA . 990 parts In-Stock

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990

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Elevate your RF and microwave signal amplification with the MAX2659ELT/V+ by Analog Devices. Known for their top-quality components and innovative technology, Analog Devices delivers reliable solutions for a wide range of applications. This narrow-band, low-power amplifier offers a gain of 16.5 dB, making it ideal for boosting signals in various electronic devices. With a maximum input power of 10 dBm and a compact component construction, this amplifier is designed to provide efficient performance while maintaining a high level of durability. Upgrade your projects with the MAX2659ELT/V+ and experience enhanced signal strength and clarity like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good thermal insulation and mechanical protection for the components inside, ensuring reliable performance and durability.

Maximum Input Power (CW): 10 dBm

High maximum input power allows the amplifier to handle strong input signals without distortion or damage.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and consistent performance, making this amplifier suitable for automotive applications.

Construction: COMPONENT

Component construction offers flexibility and customization options for different circuit designs and applications.

Power Supplies (V): 1.8/3

Wide range of power supply options allows for compatibility with different system configurations and voltages.

No. of Terminals: 6

Having 6 terminals provides connectivity options and allows for easy integration into circuits or systems.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in cold temperature environments without performance degradation.

Technology: BICMOS

BICMOS technology offers a combination of bipolar and CMOS characteristics, providing low power consumption and high-speed operation.

Maximum Supply Current: 5.6 mA

Low maximum supply current helps in reducing power consumption and heat generation in the system.

RF or Microwave Device Type: NARROW BAND LOW POWER

Narrow band low power design is ideal for applications requiring specific frequency ranges and lower power consumption.

Characteristic Impedance: 50 ohm

Standard 50 ohm impedance ensures compatibility and easy integration in RF systems and circuits.

Gain: 16.5 dB

High gain amplification allows for signal boosting and enhancement, improving overall performance of the RF or microwave system.

Mounting Feature: SURFACE MOUNT

Surface mounting feature offers easy and secure installation on circuit boards, saving space and simplifying assembly processes.

Technical Specifications

RF & Microwave Amplifiers MAX2659ELT/V+ attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16.5 dB

Maximum Input Power (CW):

10 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC6,.04,20

Power Supplies (V):

1.8/3

RF or Microwave Device Type:

Screening Level:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

5.6 mA

Technology:

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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