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BICMOS RF & Microwave Amplifiers 5

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
UPD5750T7D-E4A-A by Renesas Electronics

UPD5750T7D-E4A-A

Renesas Electronics

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Power Supplies (V): 1.8;

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA6,2X3,10

1.8

RF/Microwave Amplifiers

4.5 mA

BICMOS

BGU8011X,115 by NXP Semiconductors

BGU8011X,115

NXP Semiconductors

BGU8011X,115 from NXP Semiconductors is a surface-mount RF amplifier designed for robust performance. It operates b/w -40 °C and 85 °C with power supplies of 1.8V/2.85V and features a compact 6-terminal design. Ideal for wireless applications, it utilizes advanced BiCMOS technology for enhanced efficiency.

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.04,16

1.8/2.85

RF/Microwave Amplifiers

BICMOS

SMA661ASTR by STMicroelectronics

SMA661ASTR

STMicroelectronics

SMA661ASTR by STMicroelectronics is a wide-band low-power RF amplifier with 18 dB gain, operating b/w -40 °C and 85 °C. It features a 6-terminal surface mount design and requires a power supply of 2.7V. Ideal for RF applications in compact devices.

LOW NOISE

50 ohm

COMPONENT

18 dB

e4

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

FL6,.047,20

2.7

WIDE BAND LOW POWER

RF/Microwave Amplifiers

BICMOS

Nickel/Palladium/Gold (Ni/Pd/Au)

TRF1208RPVR by Texas Instruments

TRF1208RPVR

Texas Instruments

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Gain: 16 dB;

100 ohm

COMPONENT

16 dB

20 dBm

e4

SURFACE MOUNT

1

12

11000 MHz

10 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND LOW POWER

BICMOS

NICKEL PALLADIUM GOLD

TRF1208RPVT by Texas Instruments

TRF1208RPVT

Texas Instruments

TRF1208RPVT by Texas Instruments is a BICMOS RF amplifier with 16dB gain, operating from 10MHz to 11GHz. It has a max input power of 20dBm and operates on a 3.3V power supply. Ideal for wideband low-power applications requiring surface mounting in temperatures ranging from -40°C to 105°C.

100 ohm

COMPONENT

16 dB

20 dBm

e4

SURFACE MOUNT

1

12

11000 MHz

10 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND LOW POWER

BICMOS

Nickel/Palladium/Gold (Ni/Pd/Au)