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TRF1208RPVT

Texas Instruments

TRF1208RPVT by Texas Instruments

TRF1208RPVT by Texas Instruments is a BICMOS RF amplifier with 16dB gain, operating from 10MHz to 11GHz. It has a max input power of 20dBm and operates on a 3.3V power supply. Ideal for wideband low-power applications requiring surface mounting in temperatures ranging from -40°C to 105°C.

Median Price

$67.458

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 1,625 parts In-Stock

1+ parts

$67.458

100+ parts

$59.962

1k+ parts

$44.090

10k+ parts

-

1,625

$67.458

$59.962

$44.090

-

DigiKey

USA . 366 parts In-Stock

1+ parts

$82.830

100+ parts

$61.752

1k+ parts

$59.943

10k+ parts

-

366

$82.830

$61.752

$59.943

-

Mouser Electronics

USA . 301 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$55.210

10k+ parts

-

301

-

-

$55.210

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 401 parts In-Stock

1+ parts

$64.085

100+ parts

-

1k+ parts

-

10k+ parts

-

401

$64.085

-

-

-

Vyrian

USA . 6,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,720

-

-

-

-

Chip Stock

USA . 925 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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925

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 550 parts In-Stock

1+ parts

$46.930

100+ parts

$45.757

1k+ parts

$45.522

10k+ parts

-

550

$46.930

$45.757

$45.522

-

Ampacity Inc.

Singapore . 306 parts In-Stock

1+ parts

$46.930

100+ parts

-

1k+ parts

-

10k+ parts

-

306

$46.930

-

-

-

Corohmni

South Africa . 195 parts In-Stock

1+ parts

$55.210

100+ parts

-

1k+ parts

-

10k+ parts

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195

$55.210

-

-

-

Corphita

USA . 3,590 parts In-Stock

1+ parts

$60.712

100+ parts

-

1k+ parts

-

10k+ parts

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3,590

$60.712

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-

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Component Stockers USA

USA . 271 parts In-Stock

1+ parts

$70.280

100+ parts

$60.180

1k+ parts

-

10k+ parts

-

271

$70.280

$60.180

-

-

Overview

Enhance your RF and microwave amplifier applications with the TRF1208RPVT by Texas Instruments. With a reputation for top-quality manufacturing, Texas Instruments delivers a component that offers exceptional value to customers. This wide band low power device boasts a gain of 16 dB and a maximum operating frequency of 11000 MHz, making it ideal for a variety of projects. Trust Texas Instruments to provide reliable, high-performance components for all your RF and microwave needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the amplifier easy to handle and suitable for various applications.

Maximum Input Power (CW): 20 dBm

With a high maximum input power capacity, this amplifier can handle significant levels of power without compromising performance.

Construction: COMPONENT

Being a component-based amplifier allows for flexibility in customization and integration into different systems.

Power Supplies (V): 3.3

Operating at a low voltage of 3.3V, this amplifier is energy-efficient and can be easily powered using standard power sources.

No. of Terminals: 12

Having 12 terminals provides ample connectivity options for interfacing with other components or systems.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature ensures the amplifier can withstand harsh environmental conditions without overheating.

Minimum Operating Temperature: -40 °C

Being able to operate at temperatures as low as -40°C makes this amplifier suitable for use in cold environments or during temperature fluctuations.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of these finishes ensures good conductivity, corrosion resistance, and longevity of the terminals, maintaining signal integrity over time.

Technology: BICMOS

BICMOS technology combines the advantages of both bipolar and CMOS technologies, offering high performance, low power consumption, and improved reliability.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wide band, low power device allows for versatile use across a broad range of frequencies while consuming minimal power.

Characteristic Impedance: 100 ohm

Having a characteristic impedance of 100 ohms ensures compatibility with standard RF systems and components, simplifying integration.

Gain: 16 dB

With a gain of 16 dB, this amplifier can boost the strength of input signals, enhancing the overall performance of the RF or microwave system.

Minimum Operating Frequency: 10 MHz

Being able to operate at frequencies as low as 10 MHz allows for use in a wide range of applications that require low-frequency signal amplification.

Mounting Feature: SURFACE MOUNT

The surface mounting feature makes installation convenient and efficient, saving space and simplifying the manufacturing process.

Maximum Operating Frequency: 11000 MHz

With a high maximum operating frequency of 11000 MHz, this amplifier is suitable for applications that require amplification of microwave signals.

Technical Specifications

RF & Microwave Amplifiers TRF1208RPVT attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

100 ohm

Construction:

COMPONENT

Gain:

16 dB

Maximum Input Power (CW):

20 dBm

JESD-609 Code:

e4

Mounting Feature:

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Frequency:

11000 MHz

Minimum Operating Frequency:

10 MHz

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC12,.08SQ,20

Power Supplies (V):

3.3

RF or Microwave Device Type:

Technology:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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