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TRF1123IRTMRG3

Texas Instruments

TRF1123IRTMRG3 by Texas Instruments

TRF1123IRTMRG3 by Texas Instruments is a RF amplifier with 26dB gain, operating frequency range of 2100-2700MHz. It has a max input power of 20dBm and operates at temperatures from -40 to 85°C. Ideal for narrow band medium power applications requiring surface mount installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,826 parts In-Stock

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Digiode

USA . 1,554 parts In-Stock

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1,554

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Distributors (Availability)

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Parana Technologies

USA . 1,991 parts In-Stock

1+ parts

$1.087

100+ parts

-

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$1.931

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1,991

$1.087

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$1.931

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ChromeModa Solutions

Germany . 3,773 parts In-Stock

1+ parts

$1.221

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$1.001

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3,773

$1.221

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IDEA Electronic Components Group

UK . 2,103 parts In-Stock

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$1.221

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$1.099

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$1.221

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$3.109

100+ parts

$2.829

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$2.549

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1,000

$3.109

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$2.549

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AZTECH Wire

Italy . 287 parts In-Stock

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$15.117

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287

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One Stop Electronics

USA . 1,149 parts In-Stock

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$18.000

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$18.000

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Semicontronic

India . 1,017 parts In-Stock

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$24.000

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$23.400

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$23.280

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1,017

$24.000

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Ampacity Inc.

Singapore . 834 parts In-Stock

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$38.000

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834

$38.000

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Corphita

USA . 2,236 parts In-Stock

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DigiPath Technology Company

USA . 975 parts In-Stock

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$1.101

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Corohmni

South Africa . 483 parts In-Stock

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Overview

Enhance your RF and microwave amplifier applications with the TRF1123IRTMRG3 by Texas Instruments. Manufactured with quality and precision, this component offers a wide range of benefits and advantages for your projects. With a maximum input power of 20 dBm and a gain of 26 dB, this narrow band medium power device is designed to deliver exceptional performance at temperatures ranging from -40 to 85°C. Trust in Texas Instruments for reliable and efficient solutions that will elevate your RF and microwave systems to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the amplifier.

Maximum Input Power (CW): 20 dBm

With a high maximum input power capacity, this amplifier can handle strong signals without distortion, making it suitable for demanding applications.

Construction: COMPONENT

The component construction allows for easy integration into existing circuitry, making it a versatile choice for various RF and microwave systems.

Power Supplies (V): 7

Operating at a low voltage of 7V, this amplifier is energy-efficient and can be easily powered by standard power sources.

No. of Terminals: 32

Having 32 terminals provides flexibility for connecting to multiple input and output sources, allowing for a wide range of signal routing options.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this amplifier can withstand extended use in harsh environments without overheating or performance degradation.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that this amplifier can function reliably in cold environments, making it suitable for a diverse range of applications.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides corrosion resistance and improved solderability, ensuring a secure and reliable connection for the amplifier terminals.

Maximum Supply Current: 700 mA

With a maximum supply current of 700 mA, this amplifier is efficient in power consumption while delivering high performance output.

RF or Microwave Device Type: NARROW BAND MEDIUM POWER

This type of amplifier is optimized for narrow band applications requiring medium power levels, making it ideal for specific RF and microwave signal processing tasks.

Characteristic Impedance: 50 ohm

Having a characteristic impedance of 50 ohm enables the amplifier to efficiently match with standard RF and microwave components, reducing signal reflections and improving overall system performance.

Gain: 26 dB

With a high gain of 26 dB, this amplifier can boost signal strength effectively, making it suitable for applications where signal amplification is required.

Minimum Operating Frequency: 2100 MHz

Operating at a minimum frequency of 2100 MHz, this amplifier is suitable for high-frequency RF and microwave systems, offering enhanced performance in demanding applications.

Maximum Operating Frequency: 2700 MHz

Capable of operating at a maximum frequency of 2700 MHz, this amplifier is versatile for a wide range of RF and microwave signal processing tasks, offering flexibility in system design and integration.

Technical Specifications

RF & Microwave Amplifiers TRF1123IRTMRG3 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

26 dB

Maximum Input Power (CW):

20 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

2100 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC32,.2SQ,20

Power Supplies (V):

7

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

700 mA

Terminal Finish:

Matte Tin (Sn)

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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