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TRF1223

Texas Instruments

TRF1223 by Texas Instruments

TRF1223 by Texas Instruments is a RF amplifier with 26 dB gain, operating b/w 3300-3800 MHz. It can handle up to 20 dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband medium-power applications in temperatures ranging from -30 to 75°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,328 parts In-Stock

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7,328

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Digiode

USA . 1,473 parts In-Stock

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Parana Technologies

USA . 1,173 parts In-Stock

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$2.114

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$2.629

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1,173

$2.114

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$2.629

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DigiPath Technology Company

USA . 1,985 parts In-Stock

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$2.328

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$2.141

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1,985

$2.328

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ChromeModa Solutions

Germany . 1,343 parts In-Stock

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$2.375

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$1.948

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$2.375

$1.948

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IDEA Electronic Components Group

UK . 321 parts In-Stock

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$2.375

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$2.138

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321

$2.375

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Ampacity Inc.

Singapore . 211 parts In-Stock

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$3.000

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$3.000

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AZTECH Wire

Italy . 788 parts In-Stock

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$12.747

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$12.747

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Semicontronic

India . 905 parts In-Stock

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$18.000

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$17.550

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$17.460

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905

$18.000

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One Stop Electronics

USA . 765 parts In-Stock

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$19.000

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765

$19.000

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Corphita

USA . 2,162 parts In-Stock

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Corohmni

South Africa . 343 parts In-Stock

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Overview

Elevate your RF and microwave amplifier game with the TRF1223 by Texas Instruments. Known for their top-notch quality, Texas Instruments delivers reliable components that are built to last. This narrow band medium power amplifier boasts a 26 dB gain and can handle input powers up to 20 dBm. Perfect for applications in the 3300-3800 MHz range, the TRF1223 offers exceptional value and performance. Whether you're looking to enhance your communication systems or boost your signal strength, this amplifier is the perfect solution for all your RF and microwave needs.

Feature Benefit Bullets

Maximum Input Power (CW): 20 dBm

With a high maximum input power, this amplifier can handle strong input signals without distortion, ensuring reliable performance.

Construction: COMPONENT

Being a component-level amplifier allows for easy integration into existing RF systems for enhanced functionality.

Maximum Operating Temperature: 75 °C

The high maximum operating temperature ensures that this amplifier can function effectively in a variety of environmental conditions.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature allows this amplifier to be used in both hot and cold environments without any issues.

RF or Microwave Device Type: NARROW BAND MEDIUM POWER

This narrow band medium power amplifier is designed for specific frequency ranges, providing high efficiency and performance within that range.

Characteristic Impedance: 50 ohm

The 50 ohm impedance matches standard RF systems, allowing for seamless integration and optimal signal transfer.

Gain: 26 dB

With a high gain of 26 dB, this amplifier can boost signal strength significantly, improving overall system performance.

Minimum Operating Frequency: 3300 MHz

This amplifier can operate at a low frequency of 3300 MHz, making it suitable for a wide range of applications that require lower frequencies.

Maximum Operating Frequency: 3800 MHz

With a high maximum operating frequency of 3800 MHz, this amplifier can handle signals at higher frequencies, expanding its versatility in RF systems.

Technical Specifications

RF & Microwave Amplifiers TRF1223 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

26 dB

Maximum Input Power (CW):

20 dBm

Maximum Operating Frequency:

3800 MHz

Minimum Operating Frequency:

3300 MHz

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

-30 Cel

RF or Microwave Device Type:

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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