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TRF1123

Texas Instruments

TRF1123 by Texas Instruments

TRF1123 by Texas Instruments is a RF amplifier with 26 dB gain, operating b/w 2100-2700 MHz. It can handle up to 20 dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband medium-power applications in temperatures ranging from -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,191 parts In-Stock

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Digiode

USA . 2,131 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,386 parts In-Stock

1+ parts

$1.697

100+ parts

$157.614

1k+ parts

$1.528

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-

1,386

$1.697

$157.614

$1.528

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DigiPath Technology Company

USA . 76 parts In-Stock

1+ parts

$1.869

100+ parts

$1.719

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-

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76

$1.869

$1.719

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ChromeModa Solutions

Germany . 5,738 parts In-Stock

1+ parts

$1.907

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$1.564

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5,738

$1.907

$1.564

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IDEA Electronic Components Group

UK . 2,285 parts In-Stock

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$1.907

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$1.716

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2,285

$1.907

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$1.716

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AZTECH Wire

Italy . 643 parts In-Stock

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$7.052

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643

$7.052

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Semicontronic

India . 717 parts In-Stock

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$21.000

100+ parts

$20.475

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$20.370

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717

$21.000

$20.475

$20.370

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One Stop Electronics

USA . 1,230 parts In-Stock

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$33.000

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1,230

$33.000

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Ampacity Inc.

Singapore . 809 parts In-Stock

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$38.000

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809

$38.000

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Corphita

USA . 4,697 parts In-Stock

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4,697

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Corohmni

South Africa . 257 parts In-Stock

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257

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Overview

Elevate your RF and microwave amplification with the TRF1123 from Texas Instruments. Designed for narrow band medium power applications, this high-quality component offers a maximum input power of 20 dBm and a gain of 26 dB, ensuring optimal performance in a wide range of frequency bands. From 2100 MHz to 2700 MHz, experience enhanced signal strength and reliability in your RF systems. Trust in Texas Instruments' reputation for excellence in engineering to deliver top-notch products that exceed expectations. Upgrade your amplification capabilities today with the TRF1123.

Feature Benefit Bullets

Maximum Input Power (CW): 20 dBm

With a high maximum input power, this amplifier can handle strong signals without distorting the output.

Construction: COMPONENT

Being a component-based amplifier allows for easy integration into existing systems or setups.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this amplifier can perform reliably even in demanding environments.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures makes this amplifier suitable for a wide range of operating conditions.

RF or Microwave Device Type: NARROW BAND MEDIUM POWER

This type of device offers a balance between bandwidth and power, making it suitable for various applications.

Characteristic Impedance: 50 ohm

Having a standard impedance makes it compatible with most RF systems and components.

Gain: 26 dB

With a high gain value, this amplifier can boost the input signal effectively.

Minimum Operating Frequency: 2100 MHz

Operating at a relatively low frequency, this amplifier is suitable for applications that require signals in this range.

Maximum Operating Frequency: 2700 MHz

Being able to operate at high frequencies, this amplifier can handle a wide range of signals within this frequency range.

Technical Specifications

RF & Microwave Amplifiers TRF1123 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

26 dB

Maximum Input Power (CW):

20 dBm

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

2100 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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