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TRF1223IRTMRG3

Texas Instruments

TRF1223IRTMRG3 by Texas Instruments

TRF1223IRTMRG3 by Texas Instruments is a RF amplifier with 26dB gain, operating frequency range of 3300-3800MHz, and 20dBm max input power. It is suitable for narrow band medium power applications requiring a component construction and surface mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,894 parts In-Stock

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Digiode

USA . 201 parts In-Stock

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Parana Technologies

USA . 2,268 parts In-Stock

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$2.116

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$2.630

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2,268

$2.116

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$2.630

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$2.194

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$1.997

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$1.799

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$2.194

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$1.799

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DigiPath Technology Company

USA . 1,961 parts In-Stock

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$2.329

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$2.329

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ChromeModa Solutions

Germany . 4,411 parts In-Stock

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$2.377

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$1.949

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$2.377

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IDEA Electronic Components Group

UK . 1,013 parts In-Stock

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$2.377

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$2.139

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AZTECH Wire

Italy . 481 parts In-Stock

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$9.796

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Semicontronic

India . 1,202 parts In-Stock

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$30.000

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$29.250

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$29.100

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One Stop Electronics

USA . 1,378 parts In-Stock

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$36.000

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Ampacity Inc.

Singapore . 966 parts In-Stock

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$38.000

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A-Z Elektronik GmbH

Germany . 4,968 parts In-Stock

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Corphita

USA . 4,496 parts In-Stock

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Kepictronics

USA . 950 parts In-Stock

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Corohmni

South Africa . 178 parts In-Stock

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Overview

Elevate your RF and microwave applications with the TRF1223IRTMRG3 amplifier from Texas Instruments. Known for their top-quality components, Texas Instruments delivers a reliable and durable product that ensures optimal performance. With a wide operating temperature range and high gain of 26 dB, this narrow band medium power device is perfect for a variety of applications. From telecommunications to radar systems, the TRF1223IRTMRG3 offers customers the value and benefits they need to succeed in their projects. Upgrade your RF and microwave amplification with Texas Instruments today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this amplifier lightweight and durable, ideal for portable and rugged applications.

Maximum Input Power (CW): 20 dBm

The high maximum input power handling capability allows for reliable performance under high power conditions, suitable for demanding RF applications.

Construction: COMPONENT

The component construction of this amplifier ensures high reliability and stability in operation, making it a dependable choice for long-term use.

Power Supplies (V): 5

Operating at a low voltage of 5V makes this amplifier energy-efficient and compatible with a wide range of electronic systems.

No. of Terminals: 32

With 32 terminals, this amplifier offers flexible connectivity options for various input and output configurations, enhancing its versatility.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of 85°C ensures reliability in harsh environmental conditions, providing stable performance in diverse settings.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows this amplifier to function effectively in cold environments, making it suitable for a wide range of operating conditions.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish offers good solderability and corrosion resistance, ensuring reliable connections for long-lasting performance.

Maximum Supply Current: 950 mA

With a maximum supply current of 950mA, this amplifier operates efficiently while delivering the required power output, making it suitable for various applications.

RF or Microwave Device Type: NARROW BAND MEDIUM POWER

Being a narrow-band medium power amplifier, this product is optimized for specific frequency ranges with moderate power requirements, offering focused performance for targeted applications.

Characteristic Impedance: 50 ohm

The 50-ohm characteristic impedance ensures compatibility with standard RF systems and components, facilitating easy integration and seamless operation.

Gain: 26 dB

The high gain of 26dB amplifies the input signal effectively, boosting the output power without introducing excessive noise, enhancing signal strength and quality.

Minimum Operating Frequency: 3300 MHz

With a minimum operating frequency of 3300MHz, this amplifier is designed for high-frequency applications, offering reliable performance in demanding RF and microwave environments.

Maximum Operating Frequency: 3800 MHz

The high maximum operating frequency of 3800MHz enables this amplifier to deliver efficient signal amplification across a broad frequency range, making it versatile for a variety of RF and microwave applications.

Mounting Feature: SURFACE MOUNT

The surface-mounting feature simplifies installation and allows for easy integration into existing circuitry, saving space and facilitating convenient deployment in compact electronic systems.

Technical Specifications

RF & Microwave Amplifiers TRF1223IRTMRG3 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

26 dB

Maximum Input Power (CW):

20 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Frequency:

3800 MHz

Minimum Operating Frequency:

3300 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC32,.2SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

950 mA

Terminal Finish:

Matte Tin (Sn)

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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