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TRF1223IRTMTG3

Texas Instruments

TRF1223IRTMTG3 by Texas Instruments

TRF1223IRTMTG3 by Texas Instruments is a RF amplifier with 26dB gain, operating from 3300-3800MHz. It has a max input power of 20dBm and requires 5V supply. Ideal for narrowband medium power applications due to its surface mount construction and characteristic impedance of 50 ohms.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,773 parts In-Stock

1+ parts

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6,773

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Digiode

USA . 4,880 parts In-Stock

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4,880

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Distributors (Availability)

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Parana Technologies

USA . 652 parts In-Stock

1+ parts

$1.642

100+ parts

-

1k+ parts

$2.258

10k+ parts

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652

$1.642

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$2.258

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DigiPath Technology Company

USA . 1,645 parts In-Stock

1+ parts

$1.808

100+ parts

$1.663

1k+ parts

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1,645

$1.808

$1.663

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ChromeModa Solutions

Germany . 6,493 parts In-Stock

1+ parts

$1.845

100+ parts

$1.513

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6,493

$1.845

$1.513

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IDEA Electronic Components Group

UK . 2,042 parts In-Stock

1+ parts

$1.845

100+ parts

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$1.660

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2,042

$1.845

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$1.660

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Semicontronic

India . 543 parts In-Stock

1+ parts

$2.000

100+ parts

$1.950

1k+ parts

$1.940

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543

$2.000

$1.950

$1.940

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One Stop Electronics

USA . 1,017 parts In-Stock

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$13.000

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1,017

$13.000

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AZTECH Wire

Italy . 403 parts In-Stock

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$16.192

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403

$16.192

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Ampacity Inc.

Singapore . 1,212 parts In-Stock

1+ parts

$38.000

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1,212

$38.000

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Corohmni

South Africa . 476 parts In-Stock

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476

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Corphita

USA . 68 parts In-Stock

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Overview

Upgrade your RF and Microwave systems with the TRF1223IRTMTG3 by Texas Instruments. Manufactured with top-quality materials and components, this narrow band medium power amplifier offers a gain of 26 dB and can handle input power up to 20 dBm. Ideal for a wide range of applications, from telecommunications to aerospace, this component ensures reliable performance in extreme temperatures. Trust Texas Instruments for cutting-edge technology that delivers exceptional value and unmatched benefits to meet your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides durability and protection for the internal components of the amplifier, making it suitable for various environmental conditions.

Maximum Input Power (CW): 20 dBm

The high maximum input power handling capability ensures reliable performance and the ability to handle strong input signals without distortion.

Construction: COMPONENT

The component-based construction allows for flexibility in customizing and optimizing the performance of the amplifier for specific applications.

Power Supplies (V): 5

The low power supply voltage requirement of 5V makes the amplifier efficient and suitable for use in various low-power applications.

No. of Terminals: 32

The 32 terminals provide ample connection points for interfacing with other components and systems, increasing the versatility and integration options of the amplifier.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of 85°C allows the amplifier to operate reliably in hot environments without overheating.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature tolerance of -40°C enables the amplifier to function in cold conditions without performance degradation.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides a stable and low-resistance connection, ensuring good signal transmission and long-term reliability.

Maximum Supply Current: 950 mA

The moderate maximum supply current requirement of 950 mA allows for efficient power consumption and prolongs the amplifier's operational lifespan.

RF or Microwave Device Type: NARROW BAND MEDIUM POWER

The narrow band medium power design of the amplifier allows for precise signal amplification within a specific frequency range, making it ideal for targeted applications.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance ensures optimal matching with common RF systems and components, reducing signal reflection and improving overall performance.

Gain: 26 dB

The high gain of 26 dB amplifies the input signal strength significantly, boosting the output signal power for improved signal quality and transmission range.

Minimum Operating Frequency: 3300 MHz

The high minimum operating frequency of 3300 MHz allows the amplifier to support a wide range of RF and microwave applications, including high-frequency signals.

Maximum Operating Frequency: 3800 MHz

The maximum operating frequency of 3800 MHz provides ample bandwidth for handling various RF and microwave signals, making the amplifier versatile and suitable for numerous applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation on PCBs or other surfaces, facilitating quick and convenient integration into electronic systems.

Technical Specifications

RF & Microwave Amplifiers TRF1223IRTMTG3 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

26 dB

Maximum Input Power (CW):

20 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Frequency:

3800 MHz

Minimum Operating Frequency:

3300 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC32,.2SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

950 mA

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

TRF1223IRTMTG3 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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