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TRF1123IRTMTG3

Texas Instruments

TRF1123IRTMTG3 by Texas Instruments

TRF1123IRTMTG3 by Texas Instruments is a RF amplifier with 26dB gain, operating frequency range of 2100-2700MHz, and 20dBm max input power. Ideal for narrow band medium power applications requiring surface mounting feature and 50 ohm characteristic impedance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,500 parts In-Stock

1+ parts

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4,500

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Vyrian

USA . 4,494 parts In-Stock

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4,494

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Distributors (Availability)

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Semicontronic

India . 1,002 parts In-Stock

1+ parts

$2.000

100+ parts

$1.950

1k+ parts

$1.940

10k+ parts

-

1,002

$2.000

$1.950

$1.940

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Parana Technologies

USA . 850 parts In-Stock

1+ parts

$2.637

100+ parts

-

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$3.127

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850

$2.637

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$3.127

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DigiPath Technology Company

USA . 2,021 parts In-Stock

1+ parts

$2.904

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2,021

$2.904

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ChromeModa Solutions

Germany . 5,221 parts In-Stock

1+ parts

$2.963

100+ parts

$2.430

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5,221

$2.963

$2.430

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IDEA Electronic Components Group

UK . 1,730 parts In-Stock

1+ parts

$2.963

100+ parts

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$2.667

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1,730

$2.963

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$2.667

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AZTECH Wire

Italy . 336 parts In-Stock

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$18.413

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336

$18.413

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Ampacity Inc.

Singapore . 1,273 parts In-Stock

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$31.000

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1,273

$31.000

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One Stop Electronics

USA . 306 parts In-Stock

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$35.000

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306

$35.000

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Component Stockers USA

USA . 589 parts In-Stock

1+ parts

$99.990

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589

$99.990

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Corphita

USA . 3,371 parts In-Stock

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3,371

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Corohmni

South Africa . 143 parts In-Stock

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143

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Overview

Upgrade your RF and microwave systems with the TRF1123IRTMTG3 from Texas Instruments. This high-quality amplifier offers a wide range of applications, delivering reliable performance and exceptional value to customers. With a gain of 26 dB and a narrow-band medium power design, this component is perfect for enhancing signal strength in various electronics. Trust in Texas Instruments' expertise and invest in the TRF1123IRTMTG3 for superior results in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and reliable, ensuring the amplifier can withstand various environmental conditions.

Maximum Input Power (CW): 20 dBm

With a high maximum input power, this amplifier can handle strong input signals without distortion or damage.

Construction: COMPONENT

Being a component-based construction, this amplifier allows for easy maintenance and repair if needed.

Power Supplies (V): 7

With a low power supply requirement, this amplifier is energy-efficient and cost-effective to operate.

No. of Terminals: 32

Having a high number of terminals allows for versatile connectivity options and integration with other systems.

Maximum Operating Temperature: 85 °C

The wide operating temperature range ensures reliability and stable performance in varying environmental conditions.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this amplifier can function in extreme cold environments without issues.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides corrosion resistance, ensuring long-term reliability and performance of the terminals.

Maximum Supply Current: 700 mA

The low supply current requirement makes this amplifier suitable for applications where power consumption is a concern.

RF or Microwave Device Type: NARROW BAND MEDIUM POWER

This amplifier is designed for narrowband applications requiring medium power output, making it ideal for specific frequency ranges.

Characteristic Impedance: 50 ohm

The 50-ohm impedance matches standard RF systems, ensuring efficient power transfer and signal integrity.

Gain: 26 dB

With a high gain value, this amplifier can boost the input signal strength effectively, improving overall system performance.

Minimum Operating Frequency: 2100 MHz

The ability to operate at low frequencies makes this amplifier suitable for a wide range of RF and microwave applications.

Maximum Operating Frequency: 2700 MHz

The high maximum operating frequency allows for versatility in applications requiring signal amplification within this frequency range.

Mounting Feature: SURFACE MOUNT

The surface mount feature simplifies installation and integration into electronic systems, saving space and time during setup.

Technical Specifications

RF & Microwave Amplifiers TRF1123IRTMTG3 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

26 dB

Maximum Input Power (CW):

20 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

2100 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC32,.2SQ,20

Power Supplies (V):

7

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

700 mA

Terminal Finish:

Matte Tin (Sn)

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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