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SBB-2089Z

Sirenza Microdevices

SBB-2089Z by Sirenza Microdevices

Sirenza Microdevices' SBB-2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 12 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can operate in temperatures ranging from -40°C to 85°C.

Median Price

$16.964

Lifecycle Status

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Nova Conductors

Japan . 710 parts In-Stock

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North Shore Components

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Bristol Electronics

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Component Sense

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Legend Electronics Inc.

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Speed Components Ltd

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R&J Components

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Cyclops Electronics Ltd

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Cogito LLC

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ComSIT Distribution GmbH

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Prism Electronics

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Continental Prestige Electronics

USA . 13,019 parts In-Stock

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AZTECH Wire

Italy . 1,384 parts In-Stock

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S.R.D Solutions

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Futuretech Components

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Netroflash

USA . 1,500 parts In-Stock

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Glotronic Ltd.

UK . 800 parts In-Stock

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GreenTree Electronics

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ChipstoGo Electronic ltd

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Speed Components Ltd (Excess)

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Overview

Elevate your RF and microwave amplification with the SBB-2089Z by industry leader Sirenza Microdevices. This high-quality amplifier offers a wide band of low power amplification, providing customers with reliable performance and enhanced signal strength. Perfect for a variety of applications, from communication systems to test equipment, this component boasts a durable plastic/epoxy package body and operates smoothly in temperatures ranging from -40°C to 85°C. Trust Sirenza Microdevices to deliver superior technology and value with the SBB-2089Z amplifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and lightweight design, making it ideal for portable applications.

Maximum Input Power (CW): 12 dBm

With a high maximum input power capacity, this amplifier can handle strong signals without distortion.

Construction: COMPONENT

The component construction allows for easy integration into existing systems, reducing installation time and costs.

Power Supplies (V): 5

Operating on a low voltage of 5V makes this amplifier energy-efficient and suitable for battery-powered devices.

No. of Terminals: 3

The minimal number of terminals simplifies connections, reducing the risk of errors during setup.

Maximum Operating Temperature: 85 °C

With a high operating temperature range, this amplifier is suitable for use in a variety of environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in extreme conditions.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides a stable and corrosion-resistant surface for long-term reliability.

Technology: GAAS

The Gallium Arsenide technology offers high performance and efficiency for optimal signal amplification.

Maximum Supply Current: 98 mA

The low supply current requirement helps conserve power and extends the lifespan of the amplifier.

RF or Microwave Device Type: WIDE BAND LOW POWER

This amplifier is designed for wide-band applications while maintaining low power consumption for efficient operation.

Characteristic Impedance: 50 ohm

With a standard 50 ohm impedance, this amplifier is compatible with a wide range of RF systems.

Gain: 18.5 dB

The high gain level amplifies weak signals effectively, improving overall signal quality.

Minimum Operating Frequency: 50 MHz

Operating at a low frequency of 50 MHz, this amplifier is suitable for a variety of RF applications.

Mounting Feature: SURFACE MOUNT

The surface mount option simplifies installation and allows for a compact design, saving space in crowded systems.

Maximum Operating Frequency: 850 MHz

With a high operating frequency range, this amplifier is versatile and can handle a wide range of RF signals.

Technical Specifications

RF & Microwave Amplifiers SBB-2089Z attributes and parameters. Explore more RF & Microwave Amplifiers devices from Sirenza Microdevices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

18.5 dB

Maximum Input Power (CW):

12 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Frequency:

850 MHz

Minimum Operating Frequency:

50 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TO-243

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

98 mA

Technology:

Terminal Finish:

Matte Tin (Sn)

Manufacturer Highlights

Sirenza Microdevices

Sirenza Microdevices -RFMD Company Overview Founded in 1985 as Matrix Microassembly Corporation, Sirenza Microdevices changed its name in 1992 to Stanford Microdevices, Inc. and finally in October, 2001 became Sirenza Microdevices. Headquartered now in Broomfield, Colorado, Sirenza Microdevices and its subsidiary, Premier Devices, design and develop RF components for the commercial communications, consumer, and aerospace and defense equipment markets. Sirenza's integrated circuit (IC), multi-chip module (MCM) and passive product lines include amplifiers, power amplifiers, cable TV amplifiers, circulators, isolators, mixers, splitters, transformers, couplers, modulators, demodulators, transceivers, tuners, discrete devices, signal source components, government and military specified components, and antennae and receivers for satellite radio. Sirenza Microdevices was acquired by RF Micro Devices in August, 2007. On January 2, 2015, RFMD and Triquint jointly announced that they had completed their merger of equals to form Qorvo (NASDAQ: QRVO), and that Qorvo would start trading on the NASDAQ Global Stock Market starting from that day.

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