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BGU8009

NXP Semiconductors

BGU8009 by NXP Semiconductors

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Cyclops Electronics Ltd

UK . 948,526 parts In-Stock

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948,526

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Bristol Electronics

USA . 15,000 parts In-Stock

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15,000

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Dan-Mar Components

USA . 15,000 parts In-Stock

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15,000

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Digiode

USA . 2,655 parts In-Stock

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2,655

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Classic Components Corporation

USA . 1,605 parts In-Stock

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Vyrian

USA . 1,504 parts In-Stock

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Anansix

USA . 316 parts In-Stock

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316

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Prism Electronics

USA . 109 parts In-Stock

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VNN

France . 75 parts In-Stock

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Nova Conductors

Japan . 49 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 297 parts In-Stock

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$1.850

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297

$1.850

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Aztec Data Supply Inc.

USA . 969 parts In-Stock

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$1.880

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969

$1.880

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AZTECH Wire

Italy . 339 parts In-Stock

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$10.779

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One Stop Electronics

USA . 211 parts In-Stock

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$21.000

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Semicontronic

India . 170 parts In-Stock

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$30.000

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$29.250

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$29.100

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Ampacity Inc.

Singapore . 1,317 parts In-Stock

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$33.000

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Kepictronics

USA . 25,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 12,654 parts In-Stock

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Lixinc

USA . 12,278 parts In-Stock

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Continental Prestige Electronics

USA . 5,094 parts In-Stock

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Argo Parts USA

USA . 3,739 parts In-Stock

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Corphita

USA . 1,986 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,769 parts In-Stock

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UNI Independent Distributors

Spain . 378 parts In-Stock

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Formix International (Excess)

India . 360 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Enhance your RF and microwave applications with the BGU8009 amplifier from NXP Semiconductors. Known for their superior quality and reliability, NXP Semiconductors delivers a product that exceeds industry standards. With a maximum input power of 10 dBm and a gain of 17.6 dB, this narrow band low power device operates between 1559 MHz to 1610 MHz. Whether you're in telecommunications, industrial, or aerospace industries, the BGU8009 offers value, benefits, and advantages that will elevate your projects to new heights. Elevate your performance with NXP Semiconductors.

Feature Benefit Bullets

Maximum Input Power (CW): 10 dBm

This low power requirement makes it suitable for applications where high power handling is not needed, making it more cost-effective.

Construction: COMPONENT

Being a component allows for easy integration into existing RF and microwave systems, enhancing flexibility and customization.

Maximum Operating Temperature: 85 °C

With a high operating temperature range, this amplifier is reliable and can withstand harsh environments.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures this amplifier can be used in a variety of conditions without compromising performance.

Terminal Finish: Pure Tin (Sn)

The pure tin finish ensures reliable and low-loss connections, optimizing signal integrity.

RF or Microwave Device Type: NARROW BAND LOW POWER

This specific device type is ideal for applications requiring narrow band and low power amplification.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance is standard in RF and microwave applications, ensuring compatibility with other components.

Gain: 17.6 dB

The high gain of this amplifier boosts signal strength, making it suitable for weak signal amplification.

Minimum Operating Frequency: 1559 MHz

The low minimum operating frequency allows for use in applications requiring amplification in this frequency range.

Maximum Operating Frequency: 1610 MHz

With a high maximum operating frequency, this amplifier is suitable for applications requiring amplification in this frequency range.

Technical Specifications

RF & Microwave Amplifiers BGU8009 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

17.6 dB

Maximum Input Power (CW):

10 dBm

Maximum Operating Frequency:

1610 MHz

Minimum Operating Frequency:

1559 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Pure Tin (Sn)

Trade Compliance

BGU8009 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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