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BGU8051

NXP Semiconductors

BGU8051 by NXP Semiconductors

BGU8051 by NXP Semiconductors is a wideband low-power RF amplifier with a gain of 17 dB and operates b/w 300 MHz to 1500 MHz. It supports a max input power of 20 dBm and features an impressive VSWR of 1.07. Ideal for surface mount applications, it withstands temperatures from -40 °C to 85 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,768 parts In-Stock

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Anansix

USA . 1,652 parts In-Stock

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Vyrian

USA . 1,436 parts In-Stock

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One Stop Electronics

USA . 1,035 parts In-Stock

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$38.000

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A-Z Elektronik GmbH

Germany . 8,213 parts In-Stock

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UNI Independent Distributors

Spain . 6,108 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,151 parts In-Stock

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Corphita

USA . 3,920 parts In-Stock

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Kepictronics

USA . 3,170 parts In-Stock

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Northwest PG Solutions

USA . 865 parts In-Stock

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Futuretech Components

Singapore . 572 parts In-Stock

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Native Components

USA . 218 parts In-Stock

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Overview

Unlock unparalleled performance in your RF applications with the BGU8051 from NXP Semiconductors. Renowned for their commitment to quality and innovation, NXP delivers this wideband low-power amplifier, perfect for enhancing signal clarity in telecommunications, IoT devices, and consumer electronics. With exceptional reliability and a compact design, the BGU8051 ensures efficient operation across diverse environments, empowering your projects to achieve superior connectivity and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and lightweight characteristics, making this amplifier suitable for various applications in RF and microwave circuits.

Maximum Input Power (CW): 20 dBm

With a maximum input power of 20 dBm, this amplifier offers the ability to handle significant power levels while maintaining performance, making it ideal for diverse RF applications.

Maximum Voltage Standing Wave Ratio: 1.07

A VSWR of 1.07 indicates excellent impedance matching, which minimizes signal reflection and allows for efficient power transfer, enhancing overall system performance.

Construction: COMPONENT

Being constructed as a component ensures ease of integration into various systems and circuits, adding flexibility for designers and engineers.

Power Supplies (V): 5

Operating at 5V makes this amplifier compatible with common power supply standards, simplifying the design and implementation process in various electronic systems.

No. of Terminals: 8

Having 8 terminals provides sufficient connectivity options for input, output, and biasing, allowing for versatile installation in compact spaces.

Maximum Operating Temperature: 85 °C

The ability to operate at temperatures up to 85 °C ensures reliability and performance even in relatively harsh environments, contributing to the product's longevity.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this product is suitable for use in extreme conditions, making it reliable for outdoor and industrial applications.

Maximum Supply Current: 60 mA

A maximum supply current of 60 mA keeps power consumption low, making this amplifier energy-efficient while providing sufficient output for applications.

RF or Microwave Device Type: WIDE BAND LOW POWER

As a wide band low power device, it offers versatility across a broad frequency range, ideal for applications requiring signal amplification without high power levels.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier aligns with standard RF practices, ensuring compatibility and simplifying system integration.

Gain: 17 dB

A gain of 17 dB provides substantial signal enhancement, which is critical in many applications requiring improved signal integrity and reach.

Minimum Operating Frequency: 300 MHz

The minimum operating frequency of 300 MHz allows this amplifier to be used in various RF applications, extending its usability across multiple communication systems.

Mounting Feature: SURFACE MOUNT

The surface mount feature enables compact design and easy integration into modern electronic circuits, catering to space-constrained applications.

Maximum Operating Frequency: 1500 MHz

Operating up to 1500 MHz expands the range of applications, making it suitable for projects in both consumer electronics and professional RF systems.

Technical Specifications

RF & Microwave Amplifiers BGU8051 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

17 dB

Maximum Input Power (CW):

20 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Frequency:

1500 MHz

Minimum Operating Frequency:

300 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC8,.08,20

Power Supplies (V):

5

RF or Microwave Device Type:

Maximum Supply Current:

60 mA

Maximum Voltage Standing Wave Ratio:

1.07

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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