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RA07H4047M-501

Mitsubishi Electric

RA07H4047M-501 by Mitsubishi Electric

Mitsubishi Electric's RA07H4047M-501 is a 50 ohm hybrid module with narrow band high power RF/Microwave device type. It offers 25.22 dB gain, operates b/w 400-470 MHz frequencies, and handles up to 14.77 dBm input power. Ideal for applications requiring high-power amplification in the RF & Microwave domain.

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Vyrian

USA . 1,512 parts In-Stock

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Nova Conductors

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Aztec Data Supply Inc.

USA . 1,770 parts In-Stock

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$2.340

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Corohmni

South Africa . 1,031 parts In-Stock

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$2.856

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AZTECH Wire

Italy . 217 parts In-Stock

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$13.756

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Argo Parts USA

USA . 4,501 parts In-Stock

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Continental Prestige Electronics

USA . 993 parts In-Stock

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Perfect Parts

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Bastille Electronics

Australia . 84 parts In-Stock

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Overview

Elevate your RF and microwave amplifier performance with the RA07H4047M-501 by Mitsubishi Electric. Trusted for their superior quality, Mitsubishi Electric delivers cutting-edge technology and innovation in every product they create. Ideal for narrow band high-power applications, this module offers a gain of 25.22 dB and a maximum operating frequency of 470 MHz. With a durable plastic/epoxy package body material and a maximum input power of 14.77 dBm, this amplifier ensures reliable and efficient operation even in challenging environments. Experience the value and benefits of Mitsubishi Electric's RA07H4047M-501 amplifier for all your RF and microwave needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a lightweight and durable package for the amplifier, making it easy to handle and resistant to damage.

Maximum Input Power (CW): 14.77 dBm

The high maximum input power allows for strong signal amplification without the risk of overloading or damaging the amplifier.

Maximum Voltage Standing Wave Ratio: 4

A low VSWR value indicates efficient power transfer and minimal signal loss in the amplifier, leading to improved performance and signal fidelity.

Construction: MODULE

The modular design of the amplifier allows for easy integration into existing RF systems, simplifying installation and maintenance processes.

Power Supplies (V): 12.5

The compatible power supply voltage ensures stable and consistent operation of the amplifier, minimizing the risk of power-related issues or failures.

No. of Terminals: 4

Having multiple terminals enables versatile connectivity options and flexible usage scenarios for the amplifier in different RF setups.

Maximum Operating Temperature: 90 °C

With a high maximum operating temperature, the amplifier can withstand harsh environmental conditions and deliver reliable performance in various heat levels.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature ensures the amplifier remains operational even in cold environments, expanding its usability range.

Technology: HYBRID

The hybrid technology used in the amplifier combines the advantages of different technologies, resulting in enhanced performance and efficiency.

RF or Microwave Device Type: NARROW BAND HIGH POWER

The narrow band high power design allows the amplifier to focus and amplify specific frequency ranges with high power levels, ideal for targeted signal amplification.

Characteristic Impedance: 50 ohm

With a standard characteristic impedance, the amplifier can easily interface with other RF components and devices without impedance mismatches or signal reflections.

Gain: 25.22 dB

The high gain value indicates strong signal amplification capability, ensuring that even weak signals can be boosted effectively by the amplifier.

Minimum Operating Frequency: 400 MHz

The low minimum operating frequency allows the amplifier to cover a wide range of frequencies starting from 400 MHz, making it suitable for various RF applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature provides secure and stable installation of the amplifier on circuit boards or RF systems, preventing movement or disconnection issues.

Maximum Operating Frequency: 470 MHz

The high maximum operating frequency enables the amplifier to handle and amplify signals up to 470 MHz, suitable for a wide range of RF communication and signal processing needs.

Technical Specifications

RF & Microwave Amplifiers RA07H4047M-501 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Mitsubishi Electric

Specs

Characteristic Impedance:

50 ohm

Construction:

MODULE

Gain:

25.22 dB

Maximum Input Power (CW):

14.77 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Frequency:

470 MHz

Minimum Operating Frequency:

400 MHz

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

Package Equivalence Code:

MODULE,4LEAD,.74

Power Supplies (V):

12.5

RF or Microwave Device Type:

Technology:

Maximum Voltage Standing Wave Ratio:

4

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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