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BGU8007

NXP Semiconductors

BGU8007 by NXP Semiconductors

BGU8007 by NXP Semiconductors is a narrow band low power RF amplifier with a gain of 16 dB. It operates b/w 1559 MHz and 1610 MHz, handling input power up to 0 dBm. Ideal for applications in harsh environments, it withstands temperatures from -40 °C to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Speed Components Ltd

Israel . 5,072 parts In-Stock

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Bristol Electronics

USA . 4,884 parts In-Stock

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Dan-Mar Components

USA . 4,884 parts In-Stock

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Digiode

USA . 4,231 parts In-Stock

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Anansix

USA . 1,740 parts In-Stock

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Vyrian

USA . 17 parts In-Stock

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Northwest PG Solutions

USA . 1,457 parts In-Stock

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$2.453

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$2.453

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One Stop Electronics

USA . 327 parts In-Stock

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$28.000

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Kepictronics

USA . 6,828 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,711 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 4,436 parts In-Stock

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UNI Independent Distributors

Spain . 3,980 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,807 parts In-Stock

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Native Components

USA . 796 parts In-Stock

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Overview

Discover the outstanding performance of the BGU8007 from NXP Semiconductors, a leader in RF & Microwave Amplifiers. Engineered for excellence, this narrow-band low-power amplifier excels in demanding environments, operating seamlessly from -40 °C to 85 °C. With a robust gain of 16 dB, it delivers reliable signal enhancement for applications like satellite communications and remote sensing. Trust NXP's commitment to quality and innovation, ensuring you get unparalleled performance in your projects.

Feature Benefit Bullets

Maximum Input Power (CW): 0 dBm

This low maximum input power requirement makes the amplifier suitable for sensitive applications, ensuring protection from damage due to excessive input power.

Construction: COMPONENT

Being a component type construction, this product is versatile and can be easily integrated into various RF and microwave systems.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature indicates robust thermal performance, making this amplifier capable of functioning reliably in challenging environments.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this amplifier is suitable for extreme weather conditions, ensuring performance in a wide range of climates.

Terminal Finish: Pure Tin (Sn)

The use of pure tin for terminal finish enhances compatibility and solderability, ensuring a reliable connection in various applications.

RF or Microwave Device Type: NARROW BAND LOW POWER

As a narrow band low power amplifier, this device is tailored for specific frequency ranges, providing efficient signal amplification with minimal distortion.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance makes this amplifier compatible with standard RF applications, facilitating seamless integration with other RF components.

Gain: 16 dB

The 16 dB gain allows for effective amplification of weak signals, making this amplifier a great choice for applications requiring signal boosting.

Minimum Operating Frequency: 1559 MHz

Operating at a minimum frequency of 1559 MHz, this amplifier is suited for various RF communication applications, delivering effective performance in its frequency range.

Maximum Operating Frequency: 1610 MHz

With a maximum operating frequency of 1610 MHz, this amplifier provides a compact frequency range, allowing for specialized narrow-band communication.

Technical Specifications

RF & Microwave Amplifiers BGU8007 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16 dB

Maximum Input Power (CW):

0 dBm

Maximum Operating Frequency:

1610 MHz

Minimum Operating Frequency:

1559 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Pure Tin (Sn)

Trade Compliance

BGU8007 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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