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BGU8103

NXP Semiconductors

BGU8103 by NXP Semiconductors

The NXP Semiconductors BGU8103 is a narrow band low power RF amplifier with a gain of 14.5 dB. It operates at frequencies b/w 1559 MHz and 1610 MHz, making it suitable for applications in the RF and microwave field. Its compact surface mount package and low power consumption of 1.6 mA make it an ideal choice for various wireless communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Flip Electronics

USA . 3,550 parts In-Stock

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3,550

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VNN

France . 1,960 parts In-Stock

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1,960

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Anansix

USA . 1,212 parts In-Stock

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Vyrian

USA . 1,134 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Digiode

USA . 555 parts In-Stock

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555

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Corohmni

South Africa . 513 parts In-Stock

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$1.945

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513

$1.945

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Aztec Data Supply Inc.

USA . 932 parts In-Stock

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$2.880

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932

$2.880

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Ampacity Inc.

Singapore . 780 parts In-Stock

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$4.000

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780

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AZTECH Wire

Italy . 711 parts In-Stock

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$7.078

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One Stop Electronics

USA . 763 parts In-Stock

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$37.000

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763

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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Lixinc

USA . 19,325 parts In-Stock

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UNI Independent Distributors

Spain . 7,205 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,493 parts In-Stock

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Corphita

USA . 4,362 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,662 parts In-Stock

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Argo Parts USA

USA . 2,604 parts In-Stock

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Continental Prestige Electronics

USA . 2,265 parts In-Stock

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Kepictronics

USA . 1,938 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Upgrade your RF and Microwave Amplifier game with the BGU8103 by NXP Semiconductors. With its high-quality construction and expertise from a trusted manufacturer, this amplifier offers unparalleled performance. Whether you're in telecommunications or satellite systems, this product is designed to provide maximum value, benefits, and advantages to customers. Its narrow band low power design, impressive gain of 14.5 dB, and wide operating frequency range make it perfect for various applications. Say goodbye to technical limitations and say hello to exceptional amplification with the BGU8103.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's use of a plastic/epoxy package body material ensures excellent durability and resistance to environmental factors, making it a reliable choice for RF and microwave amplifier applications.

No. of Functions: 1

With a single function, this amplifier simplifies the overall design and integration process, making it easier to incorporate into various RF and microwave systems.

Maximum Input Power (CW): 10 dBm

The ability to handle up to 10 dBm of continuous wave input power allows this amplifier to effectively amplify signals without the risk of distortion or damage, ensuring optimal performance.

Screening Level: IEC-60134

Compliant with IEC-60134 screening level, this product undergoes thorough testing and quality control, resulting in reliable and consistent performance in demanding RF and microwave amplifier applications.

Maximum Voltage Standing Wave Ratio: 1.78

With a maximum VSWR of 1.78, this amplifier efficiently matches impedance between the input and output, minimizing signal reflections and maximizing power transfer, resulting in improved overall system performance.

Construction: COMPONENT

The use of high-quality components in the construction of this amplifier ensures its reliability, longevity, and high performance, making it an ideal choice for RF and microwave applications.

Power Supplies (V): 0.8, 1.8/2.85

With multiple power supply options of 0.8, 1.8, or 2.85 volts, this amplifier offers versatile operating capabilities, enhancing its suitability for a wide range of RF and microwave applications.

No. of Terminals: 6

Featuring a compact design with six terminals, this amplifier provides efficient connectivity and ease of integration into circuitry, maximizing space utilization and simplifying installation.

Maximum Operating Temperature: 85 °C

Designed to operate reliably at temperatures up to 85°C, this amplifier can withstand demanding thermal conditions, ensuring stable performance even in harsh environments.

Minimum Operating Temperature: -40 °C

Capable of operating down to -40°C, this amplifier remains functional in cold environmental conditions, making it suitable for a variety of RF and microwave applications.

Maximum Supply Current: 1.6 mA

With a maximum supply current of 1.6 mA, this amplifier ensures efficient power consumption and extends battery life, making it an energy-efficient choice for portable and battery-operated applications.

RF or Microwave Device Type: NARROW BAND LOW POWER

As a narrow band low-power device, this amplifier is specifically designed to provide optimal amplification for narrow frequency ranges, allowing for precise signal processing and minimizing interference.

Characteristic Impedance: 50 ohm

Designed with a characteristic impedance of 50 ohms, this amplifier matches the standard impedance used in RF and microwave applications, ensuring seamless integration with other components and maximizing signal integrity.

Gain: 14.5 dB

With a gain of 14.5 dB, this amplifier significantly amplifies the input signal, enhancing signal strength and improving overall system performance.

Minimum Operating Frequency: 1559 MHz

Capable of operating at frequencies as low as 1559 MHz, this amplifier offers versatility and compatibility with a wide range of RF and microwave systems.

Mounting Feature: SURFACE MOUNT

Featuring a surface mounting feature, this amplifier offers convenient and efficient integration onto circuit boards, simplifying assembly processes and reducing system complexity.

Maximum Operating Frequency: 1610 MHz

With a maximum operating frequency of 1610 MHz, this amplifier provides reliable amplification for a wide range of RF and microwave applications, accommodating various frequency bands.

Technical Specifications

RF & Microwave Amplifiers BGU8103 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

14.5 dB

Maximum Input Power (CW):

10 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

1610 MHz

Minimum Operating Frequency:

1559 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC6,.03,16

Power Supplies (V):

0.8,1.8/2.85

RF or Microwave Device Type:

Screening Level:

Maximum Supply Current:

1.6 mA

Maximum Voltage Standing Wave Ratio:

1.78

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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