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BGU8053

NXP Semiconductors

BGU8053 by NXP Semiconductors

BGU8053 by NXP Semiconductors is a wideband low-power RF amplifier, ideal for applications requiring high efficiency. It operates b/w 2000 MHz and 6000 MHz with a max input power of 20 dBm and boasts a VSWR of just 1.08. Designed for surface mount, it withstands temperatures from -40 °C to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,260 parts In-Stock

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Flip Electronics

USA . 1,990 parts In-Stock

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1,990

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Anansix

USA . 1,860 parts In-Stock

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1,860

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Digiode

USA . 1,348 parts In-Stock

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One Stop Electronics

USA . 305 parts In-Stock

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$12.000

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305

$12.000

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A-Z Elektronik GmbH

Germany . 4,943 parts In-Stock

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Corphita

USA . 4,560 parts In-Stock

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Kepictronics

USA . 3,800 parts In-Stock

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3,800

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Alle Elektronik GmbH

Germany . 3,295 parts In-Stock

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UNI Independent Distributors

Spain . 2,597 parts In-Stock

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Northwest PG Solutions

USA . 1,027 parts In-Stock

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Futuretech Components

Singapore . 925 parts In-Stock

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Native Components

USA . 301 parts In-Stock

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ChipstoGo Electronic ltd

UK . 200 parts In-Stock

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200

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Overview

Unlock superior performance in your RF applications with the BGU8053 from NXP Semiconductors. Renowned for its exceptional quality and reliability, this wide-band low power amplifier ensures seamless operation across diverse environments, making it ideal for communication and industrial systems. Benefit from its robust design, enabling efficiency with low input power while delivering outstanding signal integrity. Elevate your projects with an amplifier that combines excellence and versatility—experience innovation you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides a lightweight and durable housing, ensuring the amplifier can withstand various environmental conditions while maintaining performance.

Maximum Input Power (CW): 20 dBm

With a maximum input power of 20 dBm, the amplifier is capable of handling robust signals, making it suitable for various RF applications without the risk of damage.

Screening Level: IEC-60134

Compliance with IEC-60134 screening level ensures that the product meets international standards for reliability and performance in critical applications.

Maximum Voltage Standing Wave Ratio: 1.08

A low VSWR of 1.08 indicates excellent impedance matching, reducing signal reflections and enhancing overall efficiency in transmission.

Construction: COMPONENT

Designed as a component, this amplifier can easily integrate into various circuits, making it flexible for multiple applications.

Power Supplies (V): 5

Operating on a 5V supply makes this amplifier suitable for portable and battery-powered applications, enhancing design versatility.

No. of Terminals: 8

With 8 terminals, the amplifier offers multiple connection points for enhanced flexibility in system design and ease of integration.

Maximum Operating Temperature: 85 °C

The ability to operate at high temperatures (up to 85 °C) allows for reliable performance in harsh environments, making it ideal for industrial applications.

Minimum Operating Temperature: -40 °C

Operating down to -40 °C ensures that the product is suitable for extreme conditions, providing reliability in outdoor and challenging applications.

Maximum Supply Current: 85 mA

With a maximum supply current of just 85 mA, this amplifier is energy efficient, making it a great choice for battery-operated devices.

RF or Microwave Device Type: WIDE BAND LOW POWER

As a wideband low power device, it is versatile for various frequency ranges, accommodating diverse application needs without sacrificing power.

Characteristic Impedance: 50 ohm

The standard 50-ohm impedance ensures compatibility with common RF systems, simplifying integration into existing setups.

Minimum Operating Frequency: 2000 MHz

With a minimum operating frequency of 2000 MHz, this amplifier is tailored for modern RF applications, including telecommunications and wireless systems.

Mounting Feature: SURFACE MOUNT

Surface mount technology allows for compact designs and automated assembly, which can lead to lower production costs and improved reliability.

Maximum Operating Frequency: 6000 MHz

The broad frequency range up to 6000 MHz makes this amplifier suitable for a wide variety of applications in RF and microwave communications.

Technical Specifications

RF & Microwave Amplifiers BGU8053 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

20 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

2000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC8,.08SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Screening Level:

Maximum Supply Current:

85 mA

Maximum Voltage Standing Wave Ratio:

1.08

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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