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935373852528

NXP Semiconductors

935373852528 by NXP Semiconductors

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.

Median Price

$38.520

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 500 parts In-Stock

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$38.520

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500

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$38.520

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Distributors (In-Stock)

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Vyrian

USA . 4,309 parts In-Stock

1+ parts

$38.520

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4,309

$38.520

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Anansix

USA . 1,106 parts In-Stock

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1,106

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Digiode

USA . 598 parts In-Stock

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598

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bastille Electronics

Australia . 66 parts In-Stock

1+ parts

$43.020

100+ parts

$40.869

1k+ parts

-

10k+ parts

$38.288

66

$43.020

$40.869

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$38.288

Argo Parts USA

USA . 1,285 parts In-Stock

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1,285

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Corphita

USA . 359 parts In-Stock

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359

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Overview

Unleash the power of innovation with the 935373852528 by NXP Semiconductors. This RF & Microwave Amplifier offers unmatched quality and reliability, making it the top choice for a wide range of applications. With its high gain and narrow band high power technology, this amplifier delivers exceptional performance. Whether you're in telecommunications, aerospace, or automotive industries, this component is designed to exceed your expectations. Elevate your projects with the superior value and benefits that only NXP Semiconductors can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a lightweight and durable housing for the amplifier, making it ideal for various applications.

Maximum Input Power (CW): 28 dBm

With a high maximum input power, this amplifier can handle strong signals without distortion, ensuring reliable performance.

Maximum Voltage Standing Wave Ratio: 10

A low VSWR indicates efficient power transfer and optimal signal output, making this amplifier an excellent choice for precise RF applications.

Construction: COMPONENT

The component construction of this amplifier allows for easy integration into existing systems, providing flexibility and convenience during installation.

Power Supplies (V): 28

Operating at 28 volts, this amplifier can deliver high power output while remaining energy-efficient, making it suitable for a wide range of power supply setups.

No. of Terminals: 17

With 17 terminals, this amplifier offers versatility in connectivity options, accommodating complex RF circuit designs for enhanced performance.

Maximum Operating Temperature: 150 °C

The wide operating temperature range of up to 150°C ensures the amplifier can withstand harsh environmental conditions, making it a reliable choice for outdoor installations.

Minimum Operating Temperature: -40 °C

Operating down to -40°C, this amplifier can function effectively in cold environments, offering consistent performance in demanding conditions.

Terminal Finish: Tin (Sn)

The tin finish on the terminals provides corrosion resistance and reliable connections, ensuring long-term durability and stable performance.

Technology: LDMOS

Utilizing LDMOS technology, this amplifier offers high efficiency and linearity, delivering superior signal amplification for demanding RF applications.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Designed for narrow-bandwidth applications requiring high power output, this amplifier is optimized for precise signal amplification in critical RF systems.

Characteristic Impedance: 50 ohm

With a standard 50-ohm impedance, this amplifier is compatible with a wide range of RF components and equipment, allowing for seamless integration into existing systems.

Gain: 26.5 dB

The high gain of 26.5 dB boosts the signal strength significantly, improving overall system performance and signal quality in various RF applications.

Minimum Operating Frequency: 3200 MHz

Operating at a minimum frequency of 3200 MHz, this amplifier is suitable for high-frequency RF applications, providing reliable signal amplification in demanding operating conditions.

Mounting Feature: SURFACE MOUNT

The surface mounting feature of this amplifier allows for easy installation on PCBs, saving space and simplifying the assembly process for efficient system integration.

Maximum Operating Frequency: 4000 MHz

With a maximum operating frequency of 4000 MHz, this amplifier can handle a wide range of RF signals, making it versatile for various frequency bands and applications.

Technical Specifications

RF & Microwave Amplifiers 935373852528 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

26.5 dB

Maximum Input Power (CW):

28 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

17

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

3200 MHz

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

28

RF or Microwave Device Type:

Technology:

Terminal Finish:

Tin (Sn)

Maximum Voltage Standing Wave Ratio:

10

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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