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BGU8051X

NXP Semiconductors

BGU8051X by NXP Semiconductors

NXP Semiconductors' BGU8051X is a wide band low power RF amplifier with 17 dB gain, operating from 300 MHz to 1500 MHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to 85°C. Ideal for RF applications requiring high gain and broad frequency coverage.

Median Price

$8.320

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 150 parts In-Stock

1+ parts

$8.180

100+ parts

$6.000

1k+ parts

$5.170

10k+ parts

$4.620

150

$8.180

$6.000

$5.170

$4.620

DigiKey

USA . 4,178 parts In-Stock

1+ parts

$8.460

100+ parts

$6.407

1k+ parts

$5.645

10k+ parts

$5.443

4,178

$8.460

$6.407

$5.645

$5.443

Mouser Electronics

USA . 103 parts In-Stock

1+ parts

$8.460

100+ parts

$6.410

1k+ parts

$5.340

10k+ parts

$5.190

103

$8.460

$6.410

$5.340

$5.190

Verical

USA . 3,130 parts In-Stock

1+ parts

-

100+ parts

$2.175

1k+ parts

$1.825

10k+ parts

$1.800

3,130

-

$2.175

$1.825

$1.800

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,422 parts In-Stock

1+ parts

$2.175

100+ parts

-

1k+ parts

-

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-

4,422

$2.175

-

-

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Digiode

USA . 3,094 parts In-Stock

1+ parts

$2.764

100+ parts

-

1k+ parts

-

10k+ parts

-

3,094

$2.764

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-

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Anansix

USA . 1,197 parts In-Stock

1+ parts

-

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1,197

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Component Sense

UK . 170 parts In-Stock

1+ parts

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170

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Speed Components Ltd

Israel . 34 parts In-Stock

1+ parts

-

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-

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34

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 266 parts In-Stock

1+ parts

$2.619

100+ parts

-

1k+ parts

-

10k+ parts

-

266

$2.619

-

-

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Authorized Procurement Solutions

USA . 49,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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49,000

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-

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Lixinc

USA . 7,395 parts In-Stock

1+ parts

-

100+ parts

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7,395

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UNI Independent Distributors

Spain . 1,781 parts In-Stock

1+ parts

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1,781

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Northwest PG Solutions

USA . 1,767 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.548

10k+ parts

-

1,767

-

-

$3.548

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GreenTree Electronics

Israel . 500 parts In-Stock

1+ parts

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500

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Perfect Parts

USA . 11 parts In-Stock

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11

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Native Components

USA . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.511

10k+ parts

-

2

-

-

$3.511

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Overview

Enhance your RF and microwave amplifier applications with the BGU8051X by NXP Semiconductors. Known for their top-notch quality and reliability, NXP Semiconductors delivers cutting-edge components that exceed industry standards. With a maximum input power of 20 dBm and a gain of 17 dB, this wide band low power device operates seamlessly within a frequency range of 300 MHz to 1500 MHz. Whether you are designing wireless communication systems or radar applications, the BGU8051X offers unmatched value and performance, making it the ideal choice for your next project.

Feature Benefit Bullets

Maximum Input Power (CW): 20 dBm

With a maximum input power of 20 dBm, this RF & Microwave Amplifier can handle high power levels without the risk of damage, ensuring reliable performance.

Construction: COMPONENT

Being a component-based amplifier allows for flexibility in integration with different systems, making it versatile for various applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures that this amplifier can withstand elevated temperatures, making it suitable for harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C enables this amplifier to function effectively in cold environments, increasing its usability in a wide range of conditions.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wideband low power device, this amplifier is capable of amplifying signals across a broad frequency range while consuming minimal power, making it efficient and versatile.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier is compatible with standard RF systems and ensures efficient signal transmission and reception.

Gain: 17 dB

With a gain of 17 dB, this amplifier can boost the strength of input signals, improving overall system performance and signal quality.

Minimum Operating Frequency: 300 MHz

The ability to operate at a minimum frequency of 300 MHz makes this amplifier suitable for a wide range of RF and microwave applications that require lower frequency signals.

Maximum Operating Frequency: 1500 MHz

With a maximum operating frequency of 1500 MHz, this amplifier can amplify high-frequency signals, making it ideal for applications that require broad frequency coverage.

Technical Specifications

RF & Microwave Amplifiers BGU8051X attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

17 dB

Maximum Input Power (CW):

20 dBm

Maximum Operating Frequency:

1500 MHz

Minimum Operating Frequency:

300 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Trade Compliance

BGU8051X RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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