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BGU8103X

NXP Semiconductors

BGU8103X by NXP Semiconductors

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.

Median Price

$0.730

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4,551 parts In-Stock

1+ parts

$0.361

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4,551

$0.361

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Chip1Stop

Japan . 4,330 parts In-Stock

1+ parts

$0.451

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4,330

$0.451

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Farnell

UK . 107 parts In-Stock

1+ parts

$0.801

100+ parts

$0.524

1k+ parts

$0.380

10k+ parts

$0.376

107

$0.801

$0.524

$0.380

$0.376

Element14

Singapore . 536 parts In-Stock

1+ parts

$0.877

100+ parts

$0.595

1k+ parts

$0.467

10k+ parts

$0.425

536

$0.877

$0.595

$0.467

$0.425

Mouser Electronics

USA . 1,306 parts In-Stock

1+ parts

$1.040

100+ parts

$0.770

1k+ parts

$0.598

10k+ parts

$0.521

1,306

$1.040

$0.770

$0.598

$0.521

Rochester

USA . 33,972 parts In-Stock

1+ parts

-

100+ parts

$0.704

1k+ parts

$0.584

10k+ parts

$0.521

33,972

-

$0.704

$0.584

$0.521

Verical

USA . 33,972 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.730

10k+ parts

$0.651

33,972

-

-

$0.730

$0.651

EBV Elektronik

Germany . 5,000 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.449

100+ parts

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150

$0.449

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Digiode

USA . 3,670 parts In-Stock

1+ parts

$0.476

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3,670

$0.476

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Maritex

Poland . 4,720 parts In-Stock

1+ parts

$1.208

100+ parts

$0.771

1k+ parts

$0.680

10k+ parts

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4,720

$1.208

$0.771

$0.680

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Vyrian

USA . 16,026 parts In-Stock

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Flip Electronics

USA . 3,550 parts In-Stock

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3,550

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Anansix

USA . 144 parts In-Stock

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144

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VNN

France . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 17,849 parts In-Stock

1+ parts

$0.340

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17,849

$0.340

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.440

100+ parts

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$0.423

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500

$0.440

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$0.423

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Corphita

USA . 2,649 parts In-Stock

1+ parts

$0.451

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2,649

$0.451

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Component Stockers USA

USA . 89,257 parts In-Stock

1+ parts

$0.480

100+ parts

$0.450

1k+ parts

$0.400

10k+ parts

$0.370

89,257

$0.480

$0.450

$0.400

$0.370

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$1.458

100+ parts

$1.327

1k+ parts

$1.196

10k+ parts

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200

$1.458

$1.327

$1.196

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Aztec Data Supply Inc.

USA . 398 parts In-Stock

1+ parts

$1.730

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398

$1.730

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Corohmni

South Africa . 38 parts In-Stock

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$1.952

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38

$1.952

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Perfect Parts

USA . 246,400 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,314 parts In-Stock

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Lixinc

USA . 8,994 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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UNI Independent Distributors

Spain . 3,236 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

USA . 1,569 parts In-Stock

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1,569

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Continental Prestige Electronics

USA . 1,443 parts In-Stock

1+ parts

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$0.415

1k+ parts

$0.289

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1,443

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$0.415

$0.289

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Kepictronics

USA . 55 parts In-Stock

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55

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Overview

Elevate your RF and microwave amplifier experience with the BGU8103X by NXP Semiconductors. Known for their top-notch quality and reliability, NXP Semiconductors delivers cutting-edge components like this narrow band low power amplifier that offers 14.5 dB gain and operates between 1559-1610 MHz. With a maximum input power of 10 dBm and a VSWR of 1.78, this component is perfect for applications requiring precise signal amplification. Trust NXP Semiconductors to provide you with the best-in-class solutions for your RF and microwave needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and lightweight design, making the amplifier suitable for a variety of applications without adding excessive weight.

Maximum Input Power (CW): 10 dBm

With a maximum input power of 10 dBm, this amplifier can handle moderate power levels efficiently, ensuring reliable performance under normal operating conditions.

Screening Level: IEC-60134

Compliant with IEC-60134 screening level standards, this amplifier offers high reliability and performance consistency, meeting industry quality requirements.

Maximum Voltage Standing Wave Ratio: 1.78

The low maximum VSWR of 1.78 indicates efficient power transfer and minimal signal reflection, resulting in improved overall amplifier performance.

Power Supplies (V): 0.8,1.8/2.85

The flexibility to operate at multiple voltage levels (0.8V, 1.8V, 2.85V) allows for compatibility with various power sources, enhancing the amplifier's versatility.

No. of Terminals: 6

Having 6 terminals provides adequate connectivity options, ensuring ease of integration and compatibility with different circuit configurations.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this amplifier can perform reliably in high-temperature environments, expanding its usability across different settings.

Minimum Operating Temperature: -40 °C

The ability to operate at a minimum temperature of -40°C allows the amplifier to function effectively in cold environments, increasing its versatility.

Terminal Finish: TIN

The use of TIN terminal finish ensures good conductivity, corrosion resistance, and longevity, contributing to the overall reliability and performance of the amplifier.

Maximum Supply Current: 1.6 mA

The low maximum supply current of 1.6 mA indicates efficient power consumption, making this amplifier energy-efficient and suitable for battery-powered applications.

RF or Microwave Device Type: NARROW BAND LOW POWER

Being a narrow-band, low-power amplifier, it is ideal for applications requiring specific frequency ranges and low power consumption, offering optimized performance in such scenarios.

Characteristic Impedance: 50 ohm

Having a characteristic impedance of 50 ohms ensures compatibility with standard RF systems and facilitates seamless integration into existing setups, reducing impedance mismatch issues.

Gain: 14.5 dB

With a gain of 14.5 dB, this amplifier provides signal amplification, enhancing the output signal strength and overall system performance for a wide range of applications.

Minimum Operating Frequency: 1559 MHz

The ability to operate at a minimum frequency of 1559 MHz allows the amplifier to support a wide range of frequency bands, making it versatile and suitable for diverse applications.

Mounting Feature: SURFACE MOUNT

The surface-mount design simplifies installation and enables easy integration onto circuit boards, saving space and facilitating efficient assembly processes.

Maximum Operating Frequency: 1610 MHz

With a maximum operating frequency of 1610 MHz, this amplifier covers a broad frequency range, making it suitable for various RF and microwave applications requiring high-frequency operation.

Technical Specifications

RF & Microwave Amplifiers BGU8103X attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

14.5 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

1610 MHz

Minimum Operating Frequency:

1559 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC6,.03,16

Power Supplies (V):

0.8,1.8/2.85

RF or Microwave Device Type:

Screening Level:

Maximum Supply Current:

1.6 mA

Terminal Finish:

TIN

Maximum Voltage Standing Wave Ratio:

1.78

Trade Compliance

BGU8103X RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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