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PTMA080152MV1AUMA1

Infineon Technologies

PTMA080152MV1AUMA1 by Infineon Technologies

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,506 parts In-Stock

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5,506

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Digiode

USA . 497 parts In-Stock

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497

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Aztec Data Supply Inc.

USA . 248 parts In-Stock

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$0.840

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248

$0.840

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Corohmni

South Africa . 652 parts In-Stock

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$2.176

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652

$2.176

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Modulus Dynamics

Lithuania . 1,706 parts In-Stock

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$2.241

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$2.151

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$2.062

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1,706

$2.241

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AZTECH Wire

Italy . 255 parts In-Stock

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$7.999

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Semicontronic

India . 1,508 parts In-Stock

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$33.000

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$32.175

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$32.010

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1,508

$33.000

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Ampacity Inc.

Singapore . 1,087 parts In-Stock

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$37.000

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QUARKTWIN TECHNOLOGY LTD

USA . 8,782 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,361 parts In-Stock

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Argo Parts USA

USA . 4,943 parts In-Stock

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Continental Prestige Electronics

USA . 937 parts In-Stock

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Corphita

USA . 783 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Elevate your RF and microwave applications with the PTMA080152MV1AUMA1 by Infineon Technologies. With unmatched quality and reliability from a trusted manufacturer, this wide-band high-power amplifier offers a gain of 29 dB and a maximum input power of 42 dBm, catering to a frequency range of 700 MHz to 1000 MHz. Whether you're in the telecommunications, aerospace, or defense industries, this component is designed to deliver optimal performance and efficiency for your projects. Upgrade your systems today with the PTMA080152MV1AUMA1 and experience the difference in quality and precision that only Infineon Technologies can provide.

Feature Benefit Bullets

Maximum Input Power (CW): 42 dBm

With a high maximum input power, this amplifier can handle strong signals without distortion or damage, making it ideal for high-power applications.

Maximum Voltage Standing Wave Ratio: 10

A low VSWR of 10 indicates that this amplifier has excellent impedance matching, leading to efficient power transfer and minimal signal loss.

Construction: COMPONENT

Being constructed as a component means that this amplifier is designed for integration into larger systems, offering flexibility and customization options.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections and longevity of the amplifier.

RF or Microwave Device Type: WIDE BAND HIGH POWER

As a wideband high-power device, this amplifier is capable of amplifying signals across a broad frequency range with high gain, making it suitable for diverse RF and microwave applications.

Characteristic Impedance: 50 ohm

Having a standard characteristic impedance of 50 ohms ensures compatibility with most RF systems and components, simplifying integration and setup.

Gain: 29 dB

With a high gain of 29 dB, this amplifier can boost signal strength significantly, improving overall system performance and signal clarity.

Minimum Operating Frequency: 700 MHz

Operating at a frequency as low as 700 MHz allows this amplifier to amplify a wide range of signals, including lower frequency signals, making it versatile for various applications.

Maximum Operating Frequency: 1000 MHz

Capable of operating up to 1000 MHz, this amplifier can amplify high-frequency signals with precision and efficiency, suitable for modern RF and microwave systems.

Technical Specifications

RF & Microwave Amplifiers PTMA080152MV1AUMA1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Infineon Technologies

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

29 dB

Maximum Input Power (CW):

42 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

1000 MHz

Minimum Operating Frequency:

700 MHz

RF or Microwave Device Type:

Terminal Finish:

Tin (Sn)

Maximum Voltage Standing Wave Ratio:

10

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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