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THS9001DBVT

Texas Instruments

THS9001DBVT by Texas Instruments

THS9001DBVT by Texas Instruments is a wide band medium power RF amplifier with 15.5 dB gain, operating from 50 MHz to 350 MHz. It has a max supply current of 100 mA and operates in temperatures ranging from -40°C to 85°C. Ideal for applications requiring surface mount amplification in RF & microwave systems.

Median Price

$1.418

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 32,253 parts In-Stock

1+ parts

$1.418

100+ parts

$1.171

1k+ parts

$0.633

10k+ parts

-

32,253

$1.418

$1.171

$0.633

-

Mouser Electronics

USA . 485 parts In-Stock

1+ parts

$1.950

100+ parts

$1.460

1k+ parts

$1.120

10k+ parts

$1.040

485

$1.950

$1.460

$1.120

$1.040

Rochester

USA . 118,925 parts In-Stock

1+ parts

-

100+ parts

$1.240

1k+ parts

$1.030

10k+ parts

$0.918

118,925

-

$1.240

$1.030

$0.918

DigiKey

USA . 118,925 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.550

10k+ parts

-

118,925

-

-

$1.550

-

Verical

USA . 42,675 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.288

10k+ parts

$1.147

42,675

-

-

$1.288

$1.147

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 992 parts In-Stock

1+ parts

$0.835

100+ parts

-

1k+ parts

-

10k+ parts

-

992

$0.835

-

-

-

Vyrian

USA . 1,398 parts In-Stock

1+ parts

$0.879

100+ parts

-

1k+ parts

-

10k+ parts

-

1,398

$0.879

-

-

-

DigiKey Marketplace

USA . 118,925 parts In-Stock

1+ parts

-

100+ parts

$0.910

1k+ parts

-

10k+ parts

-

118,925

-

$0.910

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 66,847 parts In-Stock

1+ parts

$0.750

100+ parts

-

1k+ parts

-

10k+ parts

-

66,847

$0.750

-

-

-

Corphita

USA . 1,281 parts In-Stock

1+ parts

$0.791

100+ parts

-

1k+ parts

-

10k+ parts

-

1,281

$0.791

-

-

-

Parana Technologies

USA . 1,987 parts In-Stock

1+ parts

$1.729

100+ parts

-

1k+ parts

$2.312

10k+ parts

-

1,987

$1.729

-

$2.312

-

ChromeModa Solutions

Germany . 6,043 parts In-Stock

1+ parts

$1.943

100+ parts

$1.593

1k+ parts

-

10k+ parts

-

6,043

$1.943

$1.593

-

-

IDEA Electronic Components Group

UK . 2,156 parts In-Stock

1+ parts

$1.943

100+ parts

-

1k+ parts

$1.749

10k+ parts

-

2,156

$1.943

-

$1.749

-

QUARKTWIN TECHNOLOGY LTD

USA . 14,892 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14,892

-

-

-

-

Metaverse IC Inc.

Canada . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

DigiPath Technology Company

USA . 663 parts In-Stock

1+ parts

-

100+ parts

$1.752

1k+ parts

-

10k+ parts

-

663

-

$1.752

-

-

Perfect Parts

USA . 648 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

648

-

-

-

-

Overview

Elevate your RF and microwave amplification with the high-quality THS9001DBVT by Texas Instruments. This wide band medium power amplifier offers a gain of 15.5 dB and operates between 50 MHz to 350 MHz, making it ideal for a variety of applications. With its durable plastic/epoxy construction and nickel palladium gold terminal finish, this component ensures reliable performance in temperatures ranging from -40°C to 85°C. Trust in Texas Instruments' reputation for excellence and unlock the full potential of your projects with the THS9001DBVT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body helps in reducing overall weight and makes the product more durable and cost-effective.

Power Supplies (V): 5

Operating at a power supply of 5V makes this amplifier compatible with a wide range of systems and applications, ensuring easy integration.

Maximum Operating Temperature: 85°C

The high maximum operating temperature of 85°C allows the amplifier to operate efficiently in varied environmental conditions without risk of overheating.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance ensures efficient signal transmission and compatibility with standard RF systems, making it an ideal choice for RF applications.

Gain: 15.5 dB

The high gain of 15.5 dB amplifies the input signal strength significantly, making it suitable for applications where signal amplification is crucial.

Minimum Operating Frequency: 50 MHz

Operating at a minimum frequency of 50 MHz allows the amplifier to cover a wide range of frequencies, making it versatile for diverse RF applications.

Mounting Feature: SURFACE MOUNT

The surface mount feature simplifies the installation process and allows for easy mounting on PCBs, making it convenient for integration into electronic systems.

Maximum Operating Frequency: 350 MHz

The high maximum operating frequency of 350 MHz enables the amplifier to handle high-frequency signals, making it suitable for applications requiring high-frequency performance.

Technical Specifications

RF & Microwave Amplifiers THS9001DBVT attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

15.5 dB

JESD-609 Code:

e4

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

350 MHz

Minimum Operating Frequency:

50 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

5

RF or Microwave Device Type:

Maximum Supply Current:

100 mA

Terminal Finish:

NICKEL PALLADIUM GOLD

Trade Compliance

THS9001DBVT RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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