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THS9001DBVTG4

Texas Instruments

THS9001DBVTG4 by Texas Instruments

THS9001DBVTG4 by Texas Instruments is a wide band medium power RF amplifier with 15 dB gain. It operates b/w 50-350 MHz, ideal for RF applications. With a temperature range of -40 to 85°C, it offers reliable performance in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,247 parts In-Stock

1+ parts

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7,247

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Digiode

USA . 1,317 parts In-Stock

1+ parts

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1,317

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,866 parts In-Stock

1+ parts

$0.765

100+ parts

-

1k+ parts

$1.762

10k+ parts

-

1,866

$0.765

-

$1.762

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DigiPath Technology Company

USA . 2,283 parts In-Stock

1+ parts

$0.843

100+ parts

$0.775

1k+ parts

-

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2,283

$0.843

$0.775

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ChromeModa Solutions

Germany . 3,100 parts In-Stock

1+ parts

$0.860

100+ parts

$0.705

1k+ parts

-

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3,100

$0.860

$0.705

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IDEA Electronic Components Group

UK . 2,118 parts In-Stock

1+ parts

$0.860

100+ parts

-

1k+ parts

$0.774

10k+ parts

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2,118

$0.860

-

$0.774

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AZTECH Wire

Italy . 869 parts In-Stock

1+ parts

$12.118

100+ parts

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869

$12.118

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Ampacity Inc.

Singapore . 544 parts In-Stock

1+ parts

$23.000

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544

$23.000

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Semicontronic

India . 1,637 parts In-Stock

1+ parts

$24.000

100+ parts

$23.400

1k+ parts

$23.280

10k+ parts

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1,637

$24.000

$23.400

$23.280

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One Stop Electronics

USA . 961 parts In-Stock

1+ parts

$40.000

100+ parts

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961

$40.000

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Corohmni

South Africa . 148 parts In-Stock

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148

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Corphita

USA . 68 parts In-Stock

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68

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Overview

Unleash the power of RF & Microwave Amplifiers with the THS9001DBVTG4 by Texas Instruments. Crafted with precision and excellence, this wide band medium power amplifier offers a seamless experience for various applications. From enhancing signal strength to improving communication systems, this component boasts a gain of 15 dB and operates smoothly between 50 MHz to 350 MHz. Trust in Texas Instruments to deliver quality products that exceed expectations, providing unparalleled value and performance to customers worldwide. Elevate your projects with the THS9001DBVTG4 and experience the difference today.

Feature Benefit Bullets

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this amplifier can withstand harsh environmental conditions and maintain consistent performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this amplifier to function effectively in extreme cold conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of Ni/Pd/Au terminal finish ensures good conductivity and corrosion resistance, resulting in reliable connections for the amplifier.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

This amplifier is designed for wide band applications and offers medium power output, making it versatile for various RF and microwave amplification needs.

Characteristic Impedance: 50 ohm

A characteristic impedance of 50 ohm ensures compatibility with standard RF systems and minimal signal loss during transmission.

Gain: 15 dB

With a gain of 15 dB, this amplifier boosts the input signal strength by 15 times, enhancing the overall performance of the RF system.

Minimum Operating Frequency: 50 MHz

With a low minimum operating frequency of 50 MHz, this amplifier can amplify signals in the lower frequency range effectively.

Maximum Operating Frequency: 350 MHz

The high maximum operating frequency of 350 MHz allows this amplifier to amplify signals in the higher frequency range with precision and accuracy.

Technical Specifications

RF & Microwave Amplifiers THS9001DBVTG4 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

15 dB

JESD-609 Code:

e4

Maximum Operating Frequency:

350 MHz

Minimum Operating Frequency:

50 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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