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RA35H1516M

Mitsubishi Electric

RA35H1516M by Mitsubishi Electric

Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 5,899 parts In-Stock

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Nova Conductors

Japan . 24 parts In-Stock

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Vectronix, Inc

USA . 6 parts In-Stock

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AZTECH Wire

Italy . 595 parts In-Stock

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$15.902

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595

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Continental Prestige Electronics

USA . 5,418 parts In-Stock

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Argo Parts USA

USA . 2,156 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Overview

Unlock unparalleled performance with the RA35H1516M by Mitsubishi Electric. As a leader in RF & Microwave Amplifiers, Mitsubishi Electric guarantees top-notch quality and reliability. This narrow-band high-power module offers a maximum input power of 20 dBm and operates seamlessly between 154 MHz to 162 MHz. With a maximum operating temperature of 110°C, this amplifier is ideal for a wide range of applications. Experience the value of superior technology and elevate your projects with the RA35H1516M.

Feature Benefit Bullets

Maximum Input Power (CW): 20 dBm

The high maximum input power allows for strong and reliable signal amplification without the risk of damaging the amplifier.

Maximum Voltage Standing Wave Ratio: 3

A low VSWR indicates efficient power transfer and minimal signal loss, resulting in enhanced overall performance and signal quality.

Construction: MODULE

Modular construction offers versatility and ease of integration, allowing for customizable configurations to meet specific application requirements.

Maximum Operating Temperature: 110 °C

The wide operating temperature range ensures reliable performance in various environmental conditions, making it suitable for a range of applications.

Minimum Operating Temperature: -30 °C

The ability to operate in low temperatures makes this amplifier suitable for use in diverse climates and environments.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Designed for narrowband applications requiring high power output, making it ideal for precise and demanding RF and microwave signal amplification tasks.

Characteristic Impedance: 50 ohm

Matched impedance ensures maximum power transfer efficiency and minimizes signal reflection, leading to improved overall performance and signal fidelity.

Minimum Operating Frequency: 154 MHz

Capable of operating at relatively low frequencies, making it suitable for a variety of applications including communication systems and test equipment.

Maximum Operating Frequency: 162 MHz

Provides a high-frequency range for versatile performance, making it suitable for applications requiring amplification at higher frequencies.

Technical Specifications

RF & Microwave Amplifiers RA35H1516M attributes and parameters. Explore more RF & Microwave Amplifiers devices from Mitsubishi Electric

Specs

Characteristic Impedance:

50 ohm

Construction:

MODULE

Maximum Input Power (CW):

20 dBm

Maximum Operating Frequency:

162 MHz

Minimum Operating Frequency:

154 MHz

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-30 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

3

Trade Compliance

RA35H1516M RF & Microwave trade compliance attributes, and parameters.

NSN

5962-01-661-9679, 5962016619679

NIIN

016619679

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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