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CHA3666-QAG

United Monolithic Semiconductor Sas

CHA3666-QAG by United Monolithic Semiconductor Sas

CHA3666-QAG by United Monolithic is a wide band low power RF amplifier with 19 dB gain. It operates b/w 5800-17000 MHz, handling up to 10 dBm CW input power. Ideal for RF applications, it can withstand temperatures from -40°C to 85°C.

Median Price

$32.300

Lifecycle Status

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Verical

USA . 199 parts In-Stock

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Chip1Stop

Japan . 56 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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$28.050

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Vyrian

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AZTECH Wire

Italy . 723 parts In-Stock

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Continental Prestige Electronics

USA . 1,929 parts In-Stock

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$27.489

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Netroflash

USA . 500 parts In-Stock

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Authorized Procurement Solutions

USA . 3,678 parts In-Stock

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Argo Parts USA

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Overview

Experience unparalleled performance with the CHA3666-QAG from United Monolithic Semiconductor Sas. As a leading manufacturer in the industry, this RF & Microwave Amplifier offers exceptional quality and reliability for a wide range of applications. With a maximum input power of 10 dBm and a gain of 19 dB, this component is designed to deliver superior results. Whether you're in the aerospace, defense, or telecommunications sector, this wide band low power amplifier will provide the value, benefits, and advantages you need to stay ahead of the competition.

Feature Benefit Bullets

Maximum Input Power (CW): 10 dBm

With a high maximum input power capacity of 10 dBm, this amplifier can handle strong input signals without distortion, ensuring reliable performance.

Construction: COMPONENT

Being a component-level amplifier, it allows for easy integration into existing RF and microwave systems, offering flexibility and customization.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures that this amplifier is suitable for use in a wide range of environments, making it versatile and durable.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature of -40°C, this amplifier can be used in cold climates or in applications that require reliable performance in extreme temperatures.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wide band low power amplifier, this product is suitable for applications requiring broad frequency coverage with moderate power output, making it a cost-effective choice.

Gain: 19 dB

With a high gain of 19 dB, this amplifier can boost the signal strength significantly, improving the overall performance of the RF or microwave system it is a part of.

Minimum Operating Frequency: 5800 MHz

The low minimum operating frequency of 5800 MHz allows this amplifier to be used in applications requiring lower frequencies, offering flexibility and compatibility with a wide range of systems.

Maximum Operating Frequency: 17000 MHz

With a high maximum operating frequency of 17000 MHz, this amplifier can be used in applications requiring higher frequencies, making it versatile and suitable for a variety of RF and microwave systems.

Technical Specifications

RF & Microwave Amplifiers CHA3666-QAG attributes and parameters. Explore more RF & Microwave Amplifiers devices from United Monolithic Semiconductor Sas

Specs

Construction:

COMPONENT

Gain:

19 dB

Maximum Input Power (CW):

10 dBm

Maximum Operating Frequency:

17000 MHz

Minimum Operating Frequency:

5800 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Manufacturer Highlights

United Monolithic Semiconductor Sas

United Monolithic Semiconductors (UMS) is the European leader in offering RF MMIC products and foundry services for specialised markets, including Defence and Space, telecommunications, automotive radar and industrial sensors. With major locations in both France and Germany and a network of sales offices and representatives supporting a global customer base, the Company has a key position as a strategic supplier to the European Defence and Space industries. UMS has a comprehensive offer based on the supply of either ASIC or catalogue products, in the main based on the Company’s internal III-V technologies and through the provision of a comprehensive foundry service, allowing customers to directly create their own product solutions. The full range of catalogue products from DC to 100GHz is based on GaAs, GaN, SiGe technologies and encompasses power amplifiers up to 200W, mixed signal functions, very low noise amplifiers, and complete transceiver systems. These products are offered in die form but are more commonly packaged and in multichip module form. Our in-house GaAs and GaN processes provide the technology platform to allow the design of our leading edge products and form the basis of our foundry service offer to external design centres. Continuous and customer led innovation is at the heart of UMS’ continuing success. UMS has strong relationships with many of the major R&D centres and Universities throughout Europe, actively participating in many advanced and collaborative developments to create the technologies and products needed for future markets. UMS has a reputation for and a long heritage of supplying high quality products to the most demanding markets and is certified ISO 9001, ISO 14001 and IATF 16949. The majority of the UMS III-V internal technologies is approved for Space use and form part of the ESA EPPL list.

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