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HMC327MS8G

Analog Devices

HMC327MS8G by Analog Devices

Analog Devices' HMC327MS8G is a wide band medium power RF amplifier with 17 dB gain, operating from 3-4 GHz. It has a max input power of 16 dBm and operates b/w -40 to 85°C. Ideal for RF & microwave applications requiring surface mount components in plastic/epoxy package.

Median Price

$13.460

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,010 parts In-Stock

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-

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$13.460

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$12.040

10k+ parts

$11.340

1,010

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$13.460

$12.040

$11.340

Distributors (In-Stock)

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Digiode

USA . 171 parts In-Stock

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$14.250

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171

$14.250

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Vyrian

USA . 547 parts In-Stock

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547

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Semi Source

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Nova Conductors

Japan . 66 parts In-Stock

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QIE Inc.

USA . 20 parts In-Stock

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Sunrise Surplus Inc.

USA . 4 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,372 parts In-Stock

1+ parts

$0.860

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3,372

$0.860

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Corohmni

South Africa . 169 parts In-Stock

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$1.124

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169

$1.124

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Parana Technologies

USA . 2,366 parts In-Stock

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$1.787

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$1.662

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2,366

$1.787

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$1.662

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IDEA Electronic Components Group

UK . 663 parts In-Stock

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$1.922

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$1.826

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663

$1.922

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$1.826

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DigiPath Technology Company

USA . 28 parts In-Stock

1+ parts

$2.998

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$2.878

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$2.998

$2.878

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Ampacity Inc.

Singapore . 707 parts In-Stock

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$12.750

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707

$12.750

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Semicontronic

India . 609 parts In-Stock

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$12.750

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$12.431

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$12.368

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609

$12.750

$12.431

$12.368

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Corphita

USA . 790 parts In-Stock

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$13.500

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$13.500

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QUARKTWIN TECHNOLOGY LTD

USA . 21,888 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

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Argo Parts USA

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Glotronic Ltd.

UK . 1,890 parts In-Stock

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RC Electronics

USA . 1,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Metaverse IC Inc.

Canada . 534 parts In-Stock

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Kepictronics

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Bastille Electronics

Australia . 25 parts In-Stock

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Overview

Elevate your RF and microwave amplification needs with the HMC327MS8G by Analog Devices. With a reputation for top-notch quality and precision engineering, Analog Devices delivers unmatched performance in the field of RF & Microwave Amplifiers. This wide band medium power amplifier boasts a gain of 17 dB, making it ideal for a variety of applications. From telecommunications to radar systems, the HMC327MS8G offers customers exceptional value with its reliable construction and high-quality components. Trust Analog Devices to provide you with the cutting-edge technology you need to stay ahead in the fast-paced world of RF and microwave amplification.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the amplifier lightweight and durable, ideal for applications where weight and size are a concern.

Maximum Input Power (CW): 16 dBm

With a maximum input power of 16 dBm, this amplifier can handle high power input signals effectively without distortion, ensuring reliable performance in demanding RF applications.

Construction: COMPONENT

The component construction of this amplifier offers flexibility in integration with other RF components, allowing for customized configurations in RF systems.

Power Supplies (V): 5

Operating at a standard 5V power supply, this amplifier is easy to integrate into existing systems without the need for additional power sources, simplifying installation and maintenance.

No. of Terminals: 8

The amplifier has 8 terminals for connections, providing versatility in input/output configurations and making it suitable for a variety of RF system designs.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this amplifier can withstand high temperature environments, ensuring reliable performance in various applications.

Minimum Operating Temperature: -40 °C

The amplifier's minimum operating temperature of -40°C allows for operation in cold environments without compromising performance, making it suitable for outdoor or harsh conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and durability, ensuring secure connections and longevity in the amplifier's performance.

Technology: GAAS

Utilizing Gallium Arsenide (GaAs) technology, this amplifier offers high efficiency and linearity, making it suitable for high-frequency applications that require low noise and distortion.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

Being a wide band medium power amplifier, it can cover a broad range of frequencies while providing a good balance between power output and signal quality, making it versatile for various RF applications.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohm, this amplifier is compatible with standard RF systems and components, allowing for seamless integration into existing setups without impedance mismatches.

Gain: 17 dB

The amplifier's 17 dB gain amplifies input signals effectively, improving the overall signal-to-noise ratio and ensuring optimal performance in RF communication systems.

Minimum Operating Frequency: 3000 MHz

With a minimum operating frequency of 3000 MHz, this amplifier is suitable for high-frequency RF applications, providing reliable amplification across a wide frequency range.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation of this amplifier on PCBs, making it easy to integrate into compact electronic designs and saving valuable space in RF systems.

Maximum Operating Frequency: 4000 MHz

Capable of operating up to 4000 MHz, this amplifier is ideal for applications requiring high-frequency amplification, providing reliable performance in various RF and microwave systems.

Technical Specifications

RF & Microwave Amplifiers HMC327MS8G attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

17 dB

Maximum Input Power (CW):

16 dBm

JESD-609 Code:

e0

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

3000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP8,.19

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

HMC327MS8G RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5895-01-653-9354, 5895016539354

NIIN

016539354

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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